Match tier Likely match
Presence Current · Arkansas
Last published 2021
Sources OpenAlex · ORCID
Refreshed 2026-10-05

Wei Dou

This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.

Process engineer

University of Arkansas primary UA Pine Bluff

Also affiliated: Dartmouth College (2018); Wilkes University (2018); University of Alabama (2018); University of Massachusetts Boston (2018)

17 h-index 46 pubs 1,583 cited

Links

ORCID

Metrics

  • h-index: 17
  • Publications: 46
  • Citations: 1,583

Positions

  • Process engineer 2018–present
    Applied Materials MDP ORCID
  • Process engineer publications 2015–2021
    University of Arkansas at Fayetteville ORCID
  • Research assistant 2013–2018
    University of Arkansas Fayetteville Electrical engineering ORCID
  • Reach assistant 2010–2013
    University of the Chinese Academy of Sciences Institute of Microelectronics ORCID

Selected Publications

  • Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
    Nanotechnology 6 citations DOI OpenAlex
  • Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System (2020)
    Journal of Electronic Materials 2 citations DOI OpenAlex
  • Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging (2019)
    Conference on Lasers and Electro-Optics 10 citations DOI OpenAlex
  • Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si (2019)
    Conference on Lasers and Electro-Optics 2 citations DOI OpenAlex
  • Si-based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K (2019)
    Conference on Lasers and Electro-Optics 1 citation DOI OpenAlex
  • Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019)
    ACS Photonics 254 citations DOI OpenAlex
  • UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices (2019)
    Optical Materials Express 41 citations DOI OpenAlex
  • Si-based GeSn photodetectors towards mid-infrared imaging applications (2019)
    arXiv (Cornell University) 1 citation DOI OpenAlex
  • Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si (2019)
    ACS Photonics 143 citations DOI OpenAlex
  • Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K (2019)
    Conference on Lasers and Electro-Optics DOI OpenAlex
  • Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si (2019)
    Conference on Lasers and Electro-Optics DOI OpenAlex
  • Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging (2019)
    Conference on Lasers and Electro-Optics 1 citation DOI OpenAlex
  • Silicon-based GeSn mid-infrared lasers (Conference Presentation) (2019)
    1 citation DOI OpenAlex
  • Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications (2019)
    Applied Surface Science 18 citations DOI OpenAlex
  • All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K (2018)
    Applied Physics Letters 58 citations DOI OpenAlex

View all publications on OpenAlex →