Michael D. Glover
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Research Assistant Professor
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Michael D. Glover is a Research Assistant Professor at the University of Arkansas at Fayetteville. His research focuses on the condition assessment of regional water distribution reservoirs. He has published work on this topic, with his most recent publication in 2024.
Metrics
- h-index: 13
- Publications: 38
- Citations: 1,000
Positions
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Research Assistant Professor 2013–presentUniversity of Arkansas Fayetteville Electrical Engineering / HiDEC ORCID
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Research Associate 1995–2013University of Arkansas Fayetteville Electrical Engineering / HiDEC ORCID
Selected Publications
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3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices (2017)
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A Solution to Press-Pack Packaging of SiC MOSFETS (2017)
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Flip-chip bonded silicon carbide MOSFETs as a low parasitic alternative to wire-bonding (2016)
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Design and evaluation of press-pack SiC MOSFET (2016)
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Flip-chip Bonded SiC Power Devices on a Low Temperature Co-fired Ceramic (LTCC) Substrate for Next Generation Power Modules (2016)
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The Design and Evaluation of an Integrated Wire-Bondless Power Module (IWPM) using Low Temperature Co-fired Ceramic Interposer (2016)
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A Unified ASIC and LTCC Module Design Kit for High-Temperature High-Density Circuits (2016)
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Test Results of Sintered Nano-Silver Paste Die Attach for High Temperature Applications (2015)
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Application and reliability analysis of sintered silver preforms for die attachment of wide bandgap devices (2015)
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High-Performance and High-Data-Rate Quasi-Coaxial LTCC Vertical Interconnect Transitions for Multichip Modules and System-on-Package Applications (2015)
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Design of a reduced form factor passive heat sink for high power applications (2015)
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Nanosilver preform assisted die attach for high temperature applications (2015)
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Metal Layer Losses in Thin-Film Microstrip on LTCC (2014)
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Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems (2014)
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Integrated Protection Circuits for an NMOS Silicon Carbide Gate Driver Integrated Circuit (2014)
Collaboration Network
Top Collaborators
- Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
- A Solution to Press-Pack Packaging of SiC MOSFETS
- 3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices
- Reliable and repeatable bonding technology for high temperature automotive power modules for electrified vehicles
- High-Performance and High-Data-Rate Quasi-Coaxial LTCC Vertical Interconnect Transitions for Multichip Modules and System-on-Package Applications
Showing 5 of 20 shared publications
- 3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices
- Flip-chip bonded silicon carbide MOSFETs as a low parasitic alternative to wire-bonding
- Nanosilver preform assisted die attach for high temperature applications
- Design of a reduced form factor passive heat sink for high power applications
- The Design and Evaluation of an Integrated Wire-Bondless Power Module (IWPM) using Low Temperature Co-fired Ceramic Interposer
Showing 5 of 8 shared publications
- Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
- High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
- A UVLO Circuit in SiC Compatible With Power MOSFET Integration
Showing 5 of 6 shared publications
- High-Performance and High-Data-Rate Quasi-Coaxial LTCC Vertical Interconnect Transitions for Multichip Modules and System-on-Package Applications
- Metal Layer Losses in Thin-Film Microstrip on LTCC
- Broad frequency LTCC vertical interconnect transition for multichip modules and system on package applications
- A Low Loss Power Distribution Network Design in Low Temperature Co-fired Ceramic Technology
- Frequency and Time-Domain Performance of LTCC Transmission Lines Fabricated Using Multiple Printing Techniques
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
- High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
- A UVLO Circuit in SiC Compatible With Power MOSFET Integration
- An integrated gate driver in 4H-SiC for power converter applications
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
- High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
- A UVLO Circuit in SiC Compatible With Power MOSFET Integration
- An integrated gate driver in 4H-SiC for power converter applications
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
- High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
- A UVLO Circuit in SiC Compatible With Power MOSFET Integration
- An integrated gate driver in 4H-SiC for power converter applications
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
- High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
- A UVLO Circuit in SiC Compatible With Power MOSFET Integration
- An integrated gate driver in 4H-SiC for power converter applications
- High-Performance and High-Data-Rate Quasi-Coaxial LTCC Vertical Interconnect Transitions for Multichip Modules and System-on-Package Applications
- Broad frequency LTCC vertical interconnect transition for multichip modules and system on package applications
- A Low Loss Power Distribution Network Design in Low Temperature Co-fired Ceramic Technology
- Frequency and Time-Domain Performance of LTCC Transmission Lines Fabricated Using Multiple Printing Techniques
- High-Performance and High-Data-Rate Quasi-Coaxial LTCC Vertical Interconnect Transitions for Multichip Modules and System-on-Package Applications
- Broad frequency LTCC vertical interconnect transition for multichip modules and system on package applications
- A Low Loss Power Distribution Network Design in Low Temperature Co-fired Ceramic Technology
- Frequency and Time-Domain Performance of LTCC Transmission Lines Fabricated Using Multiple Printing Techniques
- Reliability of flexible thin-film embedded resistors and electrical characterization of thin-film embedded capacitors and inductors
- Integration of Tantalum Pentoxide Capacitors With Through-Silicon Vias
- Miniaturizing power electronics using multi-chip module technology
- Alternative Z-axis connector technologies for high-density 3-D packaging
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
- High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
- Test Results of Sintered Nano-Silver Paste Die Attach for High Temperature Applications
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
- High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
- An integrated gate driver in 4H-SiC for power converter applications
- A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
- High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
- An integrated gate driver in 4H-SiC for power converter applications
- Nickel–Tin Transient Liquid Phase Bonding Toward High-Temperature Operational Power Electronics in Electrified Vehicles
- Reliable and repeatable bonding technology for high temperature automotive power modules for electrified vehicles
- Highly reliable nickel-tin transient liquid phase bonding technology for high temperature operational power electronics in electrified vehicles
- Highly Reliable Double-sided Bonding used in Double-sided Cooling for High Temperature Power Electronics
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