Match tier
Listed
Presence
Current · Arkansas
Last published
2019
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
J
Research Areas
Links
Biography and Research Information
Metrics
- h-index: 3
- Publications: 6
- Citations: 38
Selected Publications
-
A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications (2019)
-
Board-level rapid-prototyping shielding for radio frequency transmission lines (2018)
-
A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology (2018)
-
3D Wire Bondless Integration: The Future of Silicon Carbide (SiC) Packaging (2017)
-
Thermo-mechanical reliability analysis of flip-chip bonded silicon carbide Schottky diodes (2017)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
5 shared publications
In database
- A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
- A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
- Thermo-mechanical reliability analysis of flip-chip bonded silicon carbide Schottky diodes
- 3D Wire Bondless Integration: The Future of Silicon Carbide (SiC) Packaging
- Board-level rapid-prototyping shielding for radio frequency transmission lines
Sayan Seal
University of Arkansas at Fayetteville
2 shared publications
In database
- Thermo-mechanical reliability analysis of flip-chip bonded silicon carbide Schottky diodes
- 3D Wire Bondless Integration: The Future of Silicon Carbide (SiC) Packaging
Andrea K. Wallace
University of Arkansas at Fayetteville (US)
2 shared publications
- Thermo-mechanical reliability analysis of flip-chip bonded silicon carbide Schottky diodes
- 3D Wire Bondless Integration: The Future of Silicon Carbide (SiC) Packaging
M Hussain
KTH Royal Institute of Technology (SE)
2 shared publications
- A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
- A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
Hossein Elahipanah
Ascatron (Sweden) (SE)
2 shared publications
- A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
- A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
Saul Rodriguez
KTH Royal Institute of Technology (SE)
2 shared publications
- A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
- A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
B. Gunnar Malm
KTH Royal Institute of Technology (SE)
2 shared publications
- A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
- A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
Ana Rusu
KTH Royal Institute of Technology (SE)
2 shared publications
- A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
- A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
Stephan Schröder
KTH Royal Institute of Technology (SE)
1 shared publication
- A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
W.B. Kuhn
Kansas State University (US)
1 shared publication
- Board-level rapid-prototyping shielding for radio frequency transmission lines
Joshua Welch
Kansas State University (US)
1 shared publication
- Board-level rapid-prototyping shielding for radio frequency transmission lines
Todd Rider
Honeywell (United States) (US)
1 shared publication
- Board-level rapid-prototyping shielding for radio frequency transmission lines
J. Wolf
Honeywell (United States) (US)
1 shared publication
- Board-level rapid-prototyping shielding for radio frequency transmission lines