Tzu‐Ming Lu Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

17 h-index 243 pubs 858 cited

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Biography and Research Information

OverviewAI-generated summary

Tzu-Ming Lu's research focuses on the fundamental physics and materials science of semiconductor heterostructures and superconducting devices. His work investigates phenomena such as the effects of strain on spin-orbit coupling in 2D hole gases within GeSn/Ge heterostructures and the measurement of magnetic fields using quantum diamond microscopy. Lu has also explored the characteristics of superconducting transmission line resonators in the thin film limit and investigated alternative fabrication techniques, including photothermal methods for atomic precision manufacturing.

His publications also delve into materials processing, such as the inverse metal-assisted chemical etching of germanium. Lu has characterized undoped Ge/SiGe quantum wells and studied the temperature dependence of charge distributions and carrier mobility in Si/SiGe heterostructures. His research network includes collaborators Shiva Davari and Hugh Churchill from the University of Arkansas at Fayetteville. Lu's scholarly output is marked by an h-index of 17 and over 850 citations across 243 publications.

Metrics

  • h-index: 17
  • Publications: 243
  • Citations: 858

Selected Publications

  • Advancing microelectronics through nanoscale science: A perspective on needs and opportunities from the nanoscale science research centers (2025) DOI
  • Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication (2025) DOI
  • Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures (2025) DOI
  • Dipole-Tailored Isomeric Linker Enables Decoupling of Aggregation and Crystallinity in Conjugated Polymers for Stretchable Transistors and Photodiodes (2025) DOI
  • Ta2C: A possible candidate of topological superconductor (2025) DOI
  • Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates (2025) DOI
  • Structural properties and recrystallization effects in ion beam modified B20-type FeGe films (2025) DOI
  • Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect (2024) DOI
  • Modeling and Simulation of Electrostatics of Ge$_{\text{1-x}}$Sn$_{\text{x}}$ Layers Grown on Ge Substrates (2024) DOI
  • Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor (2024) DOI
  • Inducing a tunable skyrmion-antiskyrmion system through ion beam modification of FeGe films (2024) DOI
  • Suspended Silicon Nitride Platforms for Thermal Sensing Applications in the Limit of Minimized Membrane Thickness (2024) DOI
  • Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation (2024) DOI
  • Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation (2024) DOI
  • Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure (2024) DOI

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