John Fraley
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President
Also affiliated: Mission Health (2024–2025); PE International (Germany) (2025); University of Arkansas System (2025); Cree (China) (2019); Siemens (United States) (2017); Fayetteville Public Library (2019); Arkansas Power Electronics International (2008–2015)
Faculty Researcher
Research Areas
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Biography and Research Information
OverviewAI-generated summary
John Fraley's research focuses on advanced materials and fabrication techniques for electronic devices. He has published on the development of embedded graphitic-sandwich structures in synthetic diamond using ultrafast laser micromachining, and methods for increasing the dimensional stability of buried cavities in low-temperature co-fired ceramic (LTCC) substrates. His work also includes the micromachining of conductive and capacitive electronic elements in synthetic diamond with ultrafast lasers.
Fraley has investigated ultrafast switching power modules, exploring trends, challenges, and technical solutions. He has also contributed to the study of heterogeneously integrated high-voltage silicon carbide (SiC) MOSFET power modules, including those with multi-layer substrates and built-in gate drivers. His scholarship metrics include an h-index of 7, with 28 total publications and 128 total citations.
Metrics
- h-index: 7
- Publications: 28
- Citations: 134
Selected Publications
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Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions (2026)
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Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025)
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An Advanced Extreme Environment Wireless Telemetry System for Turbine Blade Instrumentation (2019)
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A Compact 250 kW Silicon Carbide MOSFET based Three-Level Traction Inverter for Heavy Equipment Applications (2018)
Collaboration Network
Top Collaborators
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
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