P. Lai
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Role not yet determined Is this you? Add your title
Research Areas
Biography and Research Information
OverviewAI-generated summary
P. Lai studies semiconductor materials and devices, with a recent publication in 2026 focusing on threshold voltage hysteresis and bias temperature instabilities in SiC low-voltage CMOS transistors. This work contributes to the understanding of operational characteristics in silicon carbide-based transistors, a key component in modern power electronics and high-frequency applications. Lai collaborates with H. Wang at the University of Arkansas at Fayetteville, with one shared publication. Lai's research is situated within the field of advanced semiconductor device design and materials science.
Metrics
- Publications: 1
Selected Publications
-
Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors (2026)
Collaboration Network
Top Collaborators
- Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors
- Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors
- Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors
- Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors
Similar Researchers
Based on overlapping research topics