Yuxiang Chen
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Researcher
Also affiliated: University of Arkansas System (2025)
Graduate Student Researcher
Research Areas
Biography and Research Information
OverviewAI-generated summary
Yuxiang Chen's research focuses on the design and optimization of power electronic modules, particularly those utilizing silicon carbide (SiC) and gallium nitride (GaN) semiconductor technologies for high-density and ultrafast switching applications. Chen has investigated structures to embed gate drivers for SiC MOSFETs, aiming to enhance performance in medium-voltage power modules. Their work includes the development of simplified gate driver architectures to achieve faster switching speeds and the design and evaluation of GaN-based power modules with integrated drivers and low-inductance layouts. Chen collaborates with researchers at the University of Arkansas at Fayetteville, including Mohammad Dehan Rahman, Xiaoqing Song, H. Alan Mantooth, and Sudharsan Chinnaiyan, with whom they have co-authored multiple publications.
Metrics
- h-index: 1
- Publications: 3
- Citations: 3
Selected Publications
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Design of a Full-Bridge Power Module for a Dual Active Bridge Converter (2026)
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High-Density Packaging Structure Optimization with Embedded Gate Driver for 3.3 kV SiC MOSFETs (2026)
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Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions (2026)
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A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025)
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Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025)
Collaboration Network
Top Collaborators
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
- Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
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