Angiolo Huamán Data-verified
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Biography and Research Information
OverviewAI-generated summary
Angiolo Huamán's research focuses on theoretical condensed matter physics, with a particular emphasis on the electronic and optical properties of materials. His work investigates phenomena such as quantum Hall edge states under periodic driving, exploring how Floquet engineering can induce chirality switches. Huamán also studies winding Berry dipoles on strained moiré superlattices and the Thomas-Reiche-Kuhn sum rule in relation to optical susceptibility in semiconductors. His publications also address minimal d-band models for the optical susceptibility of non-centrosymmetric monolayer transition metal dichalcogenides and ferroelectrically switched valley-dependent transmission in lateral heterostructures.
He has co-authored publications with researchers at the University of Arkansas at Fayetteville, including Jonathan Mishler, Salvador Barraza‐Lopez, and Luis Enrique Rosas‐Hernandez. Huamán's scholarly output includes 14 publications, with 44 citations, and an h-index of 3. He has been recently active, with his latest publication in 2026.
Metrics
- h-index: 3
- Publications: 14
- Citations: 48
Selected Publications
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Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets (2026)
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Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures (2025)
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A lateral valley tunnel junction controlled by ferroelectric polarization (2025)
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Winding Berry dipoles on uniaxially strained graphene/insulator moiré superlattices (2025)
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Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation (2024)
Collaboration Network
Top Collaborators
- Winding Berry dipoles on uniaxially strained graphene/insulator moiré superlattices
- Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Erratum: Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation [Phys. Rev. Materials <b>8</b> , 116203 (2024)]
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation
- Erratum: Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation [Phys. Rev. Materials <b>8</b> , 116203 (2024)]
- Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets
- Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation
- Erratum: Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation [Phys. Rev. Materials <b>8</b> , 116203 (2024)]
- Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation
- Erratum: Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation [Phys. Rev. Materials <b>8</b> , 116203 (2024)]
- Winding Berry dipole on uniaxially strained graphene/hBN/hBN moiré trilayers
- Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- A lateral valley tunnel junction controlled by ferroelectric polarization
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- Quantum Hall edge states under periodic driving: A Floquet induced chirality switch
- Quantum Hall edge states under periodic driving: A Floquet induced chirality switch
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