Huong Tran Data-verified
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Researcher
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Biography and Research Information
OverviewAI-generated summary
Huong Tran's research investigates the electronic band alignment within SiGeSn/GeSn quantum wells, utilizing the internal photoemission effect. This work contributes to the understanding of semiconductor materials and their properties. Tran has published 7 papers, with a total of 4 citations and an h-index of 1. Recent publications in 2025 focus on this specific area of quantum well study.
Tran collaborates with researchers at the University of Arkansas at Fayetteville, including Sudip Acharya, Hryhorii Stanchu, and Justin Rudie, as well as Yang Zhang from the Arkansas Agricultural Experiment Station. These collaborations have resulted in 2 shared publications with each individual, indicating active engagement within the research community.
Metrics
- h-index: 1
- Publications: 7
- Citations: 4
Selected Publications
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
Collaboration Network
Top Collaborators
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
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