Md Maksud Hossian Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

grad_student

1 h-index 1 pubs 1 cited

Research Areas

GaN-based semiconductor devices and materials Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design

Links

Lab Website

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OverviewAI-generated summary

Md Maksud Hossian investigates the performance of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) under cryogenic cooling conditions. His research focuses on overcurrent testing to understand the behavior and limitations of these semiconductor devices at low temperatures. This work contributes to the understanding of advanced semiconductor materials and their applications.

Metrics

  • h-index: 1
  • Publications: 1
  • Citations: 1

Selected Publications

  • Overcurrent Test for GaN HEMT with Cryogenic Cooling (2022) DOI

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