Md Maksud Hossian Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
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Biography and Research Information
OverviewAI-generated summary
Md Maksud Hossian is a graduate student at the University of Arkansas at Fayetteville. His research has focused on semiconductor materials and devices, specifically investigating the overcurrent performance of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) under cryogenic cooling conditions. This work was presented in a 2022 publication.
Metrics
- h-index: 1
- Publications: 1
- Citations: 1
Selected Publications
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Overcurrent Test for GaN HEMT with Cryogenic Cooling (2022)
Collaboration Network
Top Collaborators
- Overcurrent Test for GaN HEMT with Cryogenic Cooling
- Overcurrent Test for GaN HEMT with Cryogenic Cooling
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