M
Md Maksudul Hossain Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
14 h-index
58 pubs
617 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Md Maksudul Hossain's research focuses on the characterization, modeling, and evaluation of semiconductor devices, particularly those based on silicon carbide (SiC) and gallium nitride (GaN) materials. His work investigates the performance of these power electronic devices under various operating conditions, including cryogenic temperatures. Hossain has published research on compact modeling of SiC power MOSFETs, including their third-quadrant behavior, and the design and optimization of gate driver integrated GaN power modules. He has also contributed to reviews on hybrid Si/SiC switches, examining their control objectives, gate driving approaches, and packaging solutions.
His research includes computational efficiency analysis of SiC MOSFET models in SPICE for dynamic behavior and comparisons of silicon and wide band gap devices at cryogenic temperatures. Hossain has also conducted comprehensive cryogenic characterizations of commercial GaN HEMTs and Si IGBTs. His recent work evaluates and models SiC-based power converters for low-temperature operation. Hossain collaborates with researchers including Alan Mantooth, H. Alan Mantooth, Abu Shahir Md Khalid Hasan, and Rosten Sweeting at the University of Arkansas at Fayetteville.
Metrics
- h-index: 14
- Publications: 58
- Citations: 617
Selected Publications
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SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025)
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Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET (2025)
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Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
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Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design (2024)
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GaN HEMT and Air Core Magnetics based Power Converters Evaluations at Cryogenic Temperature (2024)
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LTspice Modeling for GaN-GIT HEMT Including Cryogenic Temperature (2024)
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Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region (2024)
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Cryogenic Overcurrent Characteristic of GaN HEMT and Converter Evaluation (2024)
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Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature (2023)
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Deep Cryogenic Characterization of GaN HEMT at 4K (2023)
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Evaluation and Modeling of SiC Based Power Converter for Low Temperature Operation (2023)
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Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature (2022)
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Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions (2022)
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A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling (2022)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
30 shared publications
In database
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior
- Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions
- Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature
- Evaluation and Modeling of SiC Based Power Converter for Low Temperature Operation
Showing 5 of 30 shared publications
Yuqi Wei
University of Arkansas at Fayetteville (US)
27 shared publications
- Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions
- Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature
- Comprehensive Cryogenic Characterizations of a Commercial 650 V GaN HEMT
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Static and Dynamic Characterizations of 650 V Field Stop Trench Si IGBT
Showing 5 of 27 shared publications
Alan Mantooth
University of Arkansas at Fayetteville (US)
11 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Comprehensive Cryogenic Characterizations of a Commercial 650 V GaN HEMT
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Static and Dynamic Characterizations of 650 V Field Stop Trench Si IGBT
- An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
Showing 5 of 11 shared publications
Arman Ur Rashid
University of Arkansas at Fayetteville (US)
10 shared publications
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
- Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
Showing 5 of 10 shared publications
Abu Shahir Md Khalid Hasan
University of Arkansas at Fayetteville
8 shared publications
In database
- A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling
- Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
- Deep Cryogenic Characterization of GaN HEMT at 4K
- Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
Showing 5 of 8 shared publications
Rosten Sweeting
University of Arkansas at Fayetteville
7 shared publications
In database
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
- Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber
Showing 5 of 7 shared publications
Asif Imran Emon
Stony Brook University (US)
3 shared publications
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
Hayden Carlton
University of Arkansas at Fayetteville (US)
3 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Md. Moinul Islam
University of Arkansas at Fayetteville (US)
3 shared publications
- Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
Mohammad Dehan Rahman
University of Arkansas at Fayetteville
3 shared publications
In database
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
Yuxiang Chen
University of Arkansas at Fayetteville
2 shared publications
In database
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Fang Luo
Stony Brook University (US)
2 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
John Harris
University of Arkansas at Fayetteville (US)
2 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Alexis Krone
University of Arkansas at Fayetteville
2 shared publications
In database
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
David Huitink
University of Arkansas at Fayetteville
2 shared publications
In database
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
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