Match tier
Likely match
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-06
M
Md Maksudul Hossain
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Contingent Worker
Also affiliated: DuPont (United States) (2022); Intel (United States) (2022–2023); Clemson University (2018–2019)
15 h-index
60 pubs
699 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Md Maksudul Hossain's research focuses on semiconductor materials and devices, particularly wide band gap materials like Silicon Carbide (SiC) and Gallium Nitride (GaN). His work includes the design and optimization of power modules, such as wire bondless SiC MOSFET modules and gate driver integrated 3D GaN power modules. He also investigates the performance of semiconductor devices under various conditions, including cryogenic temperatures, and develops compact models for SiC MOSFETs and IGBTs that incorporate third-quadrant behavior and dynamic characteristics. His research has been published in peer-reviewed journals, and he has a significant publication record with an h-index of 15 and over 680 citations. Hossain collaborates with several researchers at the University of Arkansas at Fayetteville, including H. Alan Mantooth, Abu Shahir Md Khalid Hasan, Rosten Sweeting, and Mohammad Dehan Rahman.
Metrics
- h-index: 15
- Publications: 60
- Citations: 699
Positions
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Contingent Worker publications 2018–2026University of Arkansas at Fayetteville Institution web page
Selected Publications
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DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET (2026)
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SEU Effect in E-Mode β-Ga 2 О 3 MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025)
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Compact Modeling of β -Ga 2 O 3 Lateral Depletion Mode MOSFET (2025)
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Compact Model of β-Ga2O3 Schottky Barrier Diode (2025)
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024)
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Temperature Scaling and C–V Modeling of SiC Low-Voltage MOSFETs for IC Design (2024)
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GaN HEMT and Air Core Magnetics based Power Converters Evaluations at Cryogenic Temperature (2024)
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LTspice Modeling for GaN-GIT HEMT Including Cryogenic Temperature (2024)
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Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region (2024)
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Cryogenic Overcurrent Characteristic of GaN HEMT and Converter Evaluation (2024)
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Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature (2023)
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Deep Cryogenic Characterization of GaN HEMT at 4K (2023)
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Evaluation and Modeling of SiC Based Power Converter for Low Temperature Operation (2023)
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Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature (2022)
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Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions (2022)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
39 shared publications
In database
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of SiC MOSFET Wire Bondless Power Modules
- Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions
- A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
- Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior
Showing 5 of 39 shared publications
Yuqi Wei
University of Arkansas at Fayetteville
31 shared publications
In database
- Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions
- Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature
- Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications
- Variable Gate Voltage Control for Paralleled SiC MOSFETs
- Comprehensive Cryogenic Characterizations of a Commercial 650 V GaN HEMT
Showing 5 of 31 shared publications
Arman Ur Rashid
University of Arkansas at Fayetteville (US)
19 shared publications
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
- Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications
- An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation
Showing 5 of 19 shared publications
Alan Mantooth
University of Arkansas at Fayetteville
17 shared publications
In database
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications
- Variable Gate Voltage Control for Paralleled SiC MOSFETs
- Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- Comprehensive Cryogenic Characterizations of a Commercial 650 V GaN HEMT
Showing 5 of 17 shared publications
Rosten Sweeting
University of Arkansas at Fayetteville
10 shared publications
In database
- Variable Gate Voltage Control for Paralleled SiC MOSFETs
- Cryogenic Characterization and Modeling of Silicon Superjunction MOSFET for Power Loss Estimation
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
Showing 5 of 10 shared publications
Abu Shahir Md Khalid Hasan
University of Arkansas at Fayetteville
9 shared publications
In database
- A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling
- Temperature Scaling and C–V Modeling of SiC Low-Voltage MOSFETs for IC Design
- Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
- Deep Cryogenic Characterization of GaN HEMT at 4K
- Compact Model of β-Ga2O3 Schottky Barrier Diode
Showing 5 of 9 shared publications
Haider Mhiesan
University of Arkansas at Fayetteville
7 shared publications
In database
- Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications
- Variable Gate Voltage Control for Paralleled SiC MOSFETs
- Cryogenic Characterization and Modeling of Silicon Superjunction MOSFET for Power Loss Estimation
- Comparative Analysis of Silicon Carbide and Silicon Switching Devices for Multilevel Cascaded H-Bridge Inverter Application with Battery Energy storage
- A High Efficiency Three-level Active Neutral Point Clamped Inverter Using Hybrid Si/SiC Switches
Showing 5 of 7 shared publications
Dereje Woldegiorgis
University of Arkansas at Fayetteville
6 shared publications
In database
- Hybrid Si/SiC Switches: A Review of Control Objectives, Gate Driving Approaches and Packaging Solutions
- Cryogenic Characterization and Modeling of Silicon Superjunction MOSFET for Power Loss Estimation
- A High Efficiency Three-level Active Neutral Point Clamped Inverter Using Hybrid Si/SiC Switches
- Comparative Study of Power Semiconductor Devices Using Saber-Simulink Co-simulation
- Power Relay Based Multiple Device Cryogenic Characterization Method and Results
Showing 5 of 6 shared publications
Mohammad Dehan Rahman
University of Arkansas at Fayetteville
4 shared publications
In database
- Compact Model of β-Ga2O3 Schottky Barrier Diode
- Compact Modeling of β -Ga 2 O 3 Lateral Depletion Mode MOSFET
- SEU Effect in E-Mode β-Ga 2 О 3 MOSFET with Epitaxial Drift Layer at the Breakdown Region
- DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET
Ramchandra Kotecha
National Laboratory of the Rockies (US)
3 shared publications
- A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
- An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation
- Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
Sajib Roy
University of Arkansas at Fayetteville (US)
3 shared publications
- Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning
- Numerical Simulation Model Development and Comparative Analysis of Low-voltage SiC BJT for Compact Modeling
Affan Abbasi
University of Arkansas at Fayetteville (US)
3 shared publications
- Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
Asif Imran Emon
Stony Brook University (US)
3 shared publications
- Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
Yuxiang Chen
University of Arkansas at Fayetteville
3 shared publications
In database
- Design and Optimization of SiC MOSFET Wire Bondless Power Modules
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
Hayden Carlton
University of Arkansas at Fayetteville (US)
3 shared publications
- Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
- An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
- Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module
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