P. Lai
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Researcher
Graduate Student Researcher
Research Areas
Biography and Research Information
OverviewAI-generated summary
P. Lai is a graduate student at the University of Arkansas at Fayetteville. Their research focuses on semiconductor materials and devices, specifically investigating threshold voltage hysteresis and bias temperature instabilities in SiC low-voltage CMOS transistors. Lai has one publication on this topic, co-authored with Z Y Chen. This work contributes to the understanding and development of silicon carbide-based electronic components.
Metrics
- Publications: 1
Selected Publications
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Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors (2026)
Collaboration Network
Top Collaborators
- Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors
- Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors
- Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors
- Threshold Voltage Hysteresis and Bias Temperature Instabilities in SiC Low-Voltage CMOS Transistors
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