Match tier
Listed
Presence
Current · Arkansas
Last published
2025
Sources
OpenAlex · ORCID
Refreshed
2026-08-17
A
Anthony Di Mauro
Researcher
Graduate Student Researcher
1 h-index
3 pubs
42 cited
Research Areas
Biography and Research Information
OverviewAI-generated summary
Anthony Di Mauro's research focuses on semiconductor materials and devices, particularly silicon carbide (SiC) technology for demanding environments. His work includes investigating the fabrication and characterization of 4H-SiC Schottky Barrier Diodes, with a specific interest in their temperature sensitivity. Di Mauro has also studied the high-temperature reliability of Ti-based ohmic contacts to SiC. His recent publications include a review of silicon carbide CMOS technology for harsh environments. He has collaborated with researchers including Kevin Chen, Pengyu Lai, and Hui Wang at the University of Arkansas at Fayetteville.
Metrics
- h-index: 1
- Publications: 3
- Citations: 42
Selected Publications
-
Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity (2025)
-
<i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025)
-
A review of silicon carbide CMOS technology for harsh environments (2024)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
3 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
- Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity
Hui Wang
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Pengyu Lai
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Kevin Chen
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity
Md Zahidul Islam
University of Arkansas at Fayetteville (US)
1 shared publication
- A review of silicon carbide CMOS technology for harsh environments
Abu Shahir Md Khalid Hasan
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Nur-E-Afra Anika
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Robert D. Russell
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Zhuowen Feng
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Asif Faruque
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Thomas P. White
University of Arkansas at Fayetteville (US)
1 shared publication
- A review of silicon carbide CMOS technology for harsh environments
Zhong Chen
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Zhong Chen
University of Arkansas at Fayetteville
1 shared publication
In database
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Hui Wang
University of Arkansas at Fayetteville
1 shared publication
In database
- Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity
Zhong Chen
University of Arkansas at Fayetteville
1 shared publication
In database
- Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity
Similar Researchers
Based on overlapping research topics
Robert D. Russell
University of Arkansas at Fayetteville
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
K. Asif Faruque
University of Arkansas at Fayetteville
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Liayng Du
University of Arkansas at Fayetteville
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Amol Deshpande
University of Arkansas at Fayetteville
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Abu Shahir Md Khalid Hasan
University of Arkansas at Fayetteville
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Dick Oliver
University of Arkansas at Fayetteville
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design