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Research Areas
Biography and Research Information
OverviewAI-generated summary
Anthony Di Mauro's research focuses on semiconductor materials and devices, particularly silicon carbide (SiC) technology for demanding environments. His work includes investigating the fabrication and characterization of 4H-SiC Schottky Barrier Diodes, with a specific interest in their temperature sensitivity. Di Mauro has also studied the high-temperature reliability of Ti-based ohmic contacts to SiC. His recent publications include a review of silicon carbide CMOS technology for harsh environments. He has collaborated with researchers including Kevin Chen, Pengyu Lai, and Hui Wang at the University of Arkansas at Fayetteville.
Metrics
- h-index: 1
- Publications: 3
- Citations: 37
Selected Publications
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Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity (2025)
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<i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025)
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A review of silicon carbide CMOS technology for harsh environments (2024)
Collaboration Network
Top Collaborators
Hui Wang
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Pengyu Lai
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Kevin Chen
University of Arkansas at Fayetteville (US)
2 shared publications
- A review of silicon carbide CMOS technology for harsh environments
- Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity
H. Alan Mantooth
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Md Zahidul Islam
University of Arkansas at Fayetteville (US)
1 shared publication
- A review of silicon carbide CMOS technology for harsh environments
Abu Shahir Md Khalid Hasan
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Nur-E-Afra Anika
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Robert D. Russell
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Zhuowen Feng
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
Asif Faruque
University of Arkansas at Fayetteville (US)
1 shared publication
- A review of silicon carbide CMOS technology for harsh environments
Thomas P. White
University of Arkansas at Fayetteville (US)
1 shared publication
- A review of silicon carbide CMOS technology for harsh environments
Zhong Chen
University of Arkansas at Fayetteville
1 shared publication
In database
- A review of silicon carbide CMOS technology for harsh environments
K.Y. Chen
University of Arkansas at Fayetteville (US)
1 shared publication
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Zhong Chen
University of Arkansas at Fayetteville (US)
1 shared publication
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC
Hui Wang
University of Arkansas at Fayetteville (US)
1 shared publication
- Fabrication and Characterization of 4H-SiC Schottky Barrier Diodes with Highly Linear Temperature Sensitivity
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