Ramesh Vasan
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
Also affiliated: Birla Institute of Technology and Science, Pilani - Goa Campus (2025)
Graduate Student Researcher
Research Areas
Biography and Research Information
OverviewAI-generated summary
Ramesh Vasan's research focuses on the development and characterization of materials for optoelectronic devices. His recent work has investigated the use of nickel oxide nanoparticles as a hole transport layer in quantum dot light-emitting devices (QLEDs). This research explores low-temperature, solution-processed methods for creating these nanoparticles, aiming to improve the efficiency and fabrication of QLEDs. Vasan has also examined the role of resonant energy transfer between non-stoichiometric nickel oxide and alloyed CdSe/ZnS quantum dots in all-inorganic QLEDs. His publication record includes three papers, and his work has garnered one citation. Vasan collaborates with Colin D. Heyes and M. O. Manasreh at the University of Arkansas at Fayetteville.
Metrics
- h-index: 1
- Publications: 3
- Citations: 2
Selected Publications
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All-inorganic QLEDs utilizing resonant energy transfer between non-stoichiometric nickel oxide hole transport layer and alloyed CdSe/ZnS quantum dots (2025)
Collaboration Network
Top Collaborators
- All-inorganic QLEDs utilizing resonant energy transfer between non-stoichiometric nickel oxide hole transport layer and alloyed CdSe/ZnS quantum dots
- All-inorganic QLEDs utilizing resonant energy transfer between non-stoichiometric nickel oxide hole transport layer and alloyed CdSe/ZnS quantum dots
- All-inorganic QLEDs utilizing resonant energy transfer between non-stoichiometric nickel oxide hole transport layer and alloyed CdSe/ZnS quantum dots
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