Y
Yiyin Zhou Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Research Assistant
grad_student
18 h-index
72 pubs
1,854 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Yiyin Zhou is a Research Assistant at the University of Arkansas at Fayetteville. Zhou's research focuses on semiconductor materials and devices, particularly GeSn-based lasers. Their work investigates methods to enhance laser performance, including optimizing cap layers and exploring dual-wavelength emission capabilities. Recent publications detail the performance of electrically injected GeSn lasers, with studies demonstrating operation at various temperatures and wavelengths up to 2.7 μm.
Zhou's scholarship metrics include an h-index of 18, with 74 total publications and 1,810 citations. They have received funding from the National Science Foundation (NSF) for an I-Corps project focused on microheater array powder sintering technology for additive manufacturing, serving as PI and receiving $50,000. Key collaborators include Wei Du, Solomon Ojo, Shui-Qing Yu, and Sylvester Amoah, all from the University of Arkansas at Fayetteville, with whom Zhou has co-authored multiple publications.
Metrics
- h-index: 18
- Publications: 72
- Citations: 1,854
Selected Publications
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Electrically Injected GeSn Laser Operating up to 135 K (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023)
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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022)
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Silicon-based electrically injected GeSn lasers (2022)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
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Electrically Injected GeSn Laser on Si Operating up to 110K (2021)
Federal Grants 1 $50,000 total
NSF
PI
Apr 2021 - Sep 2022
I-Corps: Microheater Array Powder Sintering Technology for Additive Manufacturing
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
8 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
Showing 5 of 8 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
7 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
Showing 5 of 7 shared publications
Wei Du
University of Arkansas at Fayetteville
7 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
Showing 5 of 7 shared publications
Grey Abernathy
University of Arkansas at Fayetteville (US)
6 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically Injected GeSn Laser on Si Operating up to 110K
Showing 5 of 6 shared publications
Sylvester Amoah
University of Arkansas at Fayetteville
5 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Electrically Injected GeSn Laser Operating up to 135 K
Baohua Li
5 shared publications
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Silicon-based electrically injected GeSn lasers
- Electrically Injected GeSn Laser on Si Operating up to 110K
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
Joshua M. Grant
University of Arkansas at Fayetteville
4 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
Huong Tran
University of Arkansas at Fayetteville (US)
3 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Silicon-based electrically injected GeSn lasers
- Electrically Injected GeSn Laser on Si Operating up to 110K
Joe Margetis
Arizona State University (US)
3 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically Injected GeSn Laser on Si Operating up to 110K
John Tolle
Arizona State University (US)
3 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically Injected GeSn Laser on Si Operating up to 110K
Guo‐En Chang
National Chung Cheng University (TW)
3 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Silicon-based electrically injected GeSn lasers
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
Yong‐Hang Zhang
Arizona State University (US)
2 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Baohua Li
2 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
2 shared publications
In database
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
Shui-Qing Yu
University of Arkansas at Fayetteville (US)
2 shared publications
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
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