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Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-06
W
Wei Du
Federal Grant PI
High Impact
Associate Professor
Faculty Researcher
31 h-index
181 pubs
3,626 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Wei Du's research focuses on the development and application of nanomaterials and advanced optical devices. He has received federal funding from the National Science Foundation for projects centered on semiconductor lasers and photonic materials. Specifically, one NSF award of $299,612 supports the development of semiconductor lasers and passive devices on a single sapphire platform for integrated microwave photonics, with Du serving as PI. Another NSF award, totaling $271,852, funds collaborative research on SiGeSn-based heterostructures for intersubband photonic materials, also with Du as PI.
His scholarly work includes publications on topics such as the peroxidase-like activity of Fe3O4 nanozymes, electrically injected GeSn lasers, and ultraviolet graphene absorption engineered by plasmon resonance. Recent publications also explore temperature-tunable metamaterial biosensors and optimization methods for ship weather routing. Du's research network includes frequent collaborators from the University of Arkansas at Fayetteville, such as Shui-Qing Yu, Hryhorii Stanchu, Gregory J. Salamo, and Nirosh M. Eldose, with whom he has co-authored numerous publications.
With an h-index of 31 and over 181 publications, Du is recognized as a highly cited researcher. His work spans areas including nanotechnology, semiconductor devices, and optical engineering, contributing to advancements in sensing technologies and integrated photonics.
Metrics
- h-index: 31
- Publications: 181
- Citations: 3,626
Selected Publications
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Midinfrared <i>p-i-n</i> GeSn Waveguide Photodetectors for 3-μm Band Silicon Photonics (2025)
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High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
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Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array (2025)
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Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
Federal Grants 2 $571,464 total
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
25 shared publications
In database
- Advances in GeSn alloys for MIR applications
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
Showing 5 of 25 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
16 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 16 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
11 shared publications
In database
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 11 shared publications
Baohua Li
University of Arkansas at Fayetteville
9 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 9 shared publications
Diandian Zhang
Center for NanoScience
9 shared publications
In database
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Showing 5 of 9 shared publications
Grey Abernathy
7 shared publications
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- Effects of ion implantation with arsenic and boron in germanium-tin layers
Showing 5 of 7 shared publications
Joshua M. Grant
University of Arkansas at Fayetteville
7 shared publications
In database
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
Showing 5 of 7 shared publications
Serhii Kryvyi
Center for NanoScience
7 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
Showing 5 of 7 shared publications
Yuriy I. Mazur
Center for NanoScience
7 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
Showing 5 of 7 shared publications
Nirosh M. Eldose
Center for NanoScience
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42%
Showing 5 of 7 shared publications
Dinesh Baral
Center for NanoScience
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42%
Showing 5 of 7 shared publications
Sudip Acharya
University of Arkansas at Fayetteville
6 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Showing 5 of 6 shared publications
Fernando Maia de Oliveira
Center for NanoScience
6 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
Showing 5 of 6 shared publications
Jifeng Liu
Dartmouth College (US)
6 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Editorial: SiGeSn Infrared Photonics and Quantum Electronics
Showing 5 of 6 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
4 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
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