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Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-08
S
Salvador Barraza-Lopez
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Federal Grant PI
Professor
Also affiliated: The University of Tokyo (2026)
30 h-index
150 pubs
3,825 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Salvador Barraza-Lopez, a professor at the University of Arkansas at Fayetteville, has a research focus on the electronic and optical properties of two-dimensional (2D) materials. His work investigates the physical properties of materials such as graphene, group-IV monochalcogenides, and black phosphorus, particularly in their monolayer and few-layer forms. Recent publications explore topics including the effects of metallic contacts on electron transport through graphene, the microscopic manipulation of ferroelectric domains in tin selenide (SnSe) monolayers, and the enhanced spontaneous polarization in ultrathin tin telluride (SnTe) films with layered antipolar structures.
Barraza-Lopez's research also delves into structural phase transitions and the material properties of these 2D materials, as well as the phenomenon of two-dimensional disorder in materials like black phosphorus and monochalcogenide monolayers. He has authored or co-authored over 150 publications, accumulating more than 3,800 citations and an h-index of 30. He has also served as Principal Investigator on an NSF-funded project for high-performance computing resources, totaling $499,113.
His collaborations include work with researchers such as Joseph E. Roll, Angiolo Huamán, Luis Enrique Rosas-Hernandez, and Gustavo S. Orozco-Galvan, all from the University of Arkansas at Fayetteville. Barraza-Lopez remains an active researcher, with recent publications in 2021 and 2020.
Metrics
- h-index: 30
- Publications: 150
- Citations: 3,825
Positions
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Professor 2024–presentUniversity of Arkansas Physics ORCID
Selected Publications
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Tuning terahertz optomechanics of MoS 2 bilayers with homogeneous in-plane strain (2026)
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Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures (2026)
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Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets (2026)
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Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets (2026)
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Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures (2025)
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Reference lattice, sound, stiffness, and magnetic transitions of Ising monolayers (2025)
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A lateral valley tunnel junction controlled by ferroelectric polarization (2025)
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Winding Berry dipoles on uniaxially strained graphene/insulator moiré superlattices (2025)
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Defect‐Free Nanowelding of Bilayer SnSe Nanoplates (Adv. Mater. 36/2024) (2024)
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Insulating moiré homobilayers lack a threefold symmetric second-harmonic generation (2024)
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Substrate Interference and Strain in the Second-Harmonic Generation from MoSe 2 Monolayers (2024)
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Defect‐Free Nanowelding of Bilayer SnSe Nanoplates (2024)
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Size-dependent ferroelectric-to-paraelectric sliding transformations and antipolar-to-ferroelectric topological phase transitions in binary homobilayers (2024)
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Tight-binding model with sublattice-asymmetric spin-orbit coupling for square-net nodal line Dirac semimetals (2024)
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Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update (2023)
Federal Grants 1 $499,113 total
NSF
PI
Jul 2024 - Jun 2027
Collaboration Network
Top Collaborators
S. Parkin
Max Planck Institute of Microstructure Physics (DE)
12 shared publications
- Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
- Colloquium : Physical properties of group-IV monochalcogenide monolayers
- Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure
- From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films
- Standing Waves Induced by Valley-Mismatched Domains in Ferroelectric SnTe Monolayers
Showing 5 of 12 shared publications
Kai Chang
Beijing Academy of Quantum Information Sciences (CN)
11 shared publications
- Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
- Colloquium : Physical properties of group-IV monochalcogenide monolayers
- Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure
- Standing Waves Induced by Valley-Mismatched Domains in Ferroelectric SnTe Monolayers
- Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures
Showing 5 of 11 shared publications
Alejandro A. Pacheco Sanjuan
Universidad del Norte (CO)
8 shared publications
- Intrinsic Defects, Fluctuations of the Local Shape, and the Photo-Oxidation of Black Phosphorus
- Strain and the optoelectronic properties of nonplanar phosphorene monolayers
- Strain gauge fields for rippled graphene membranes under central mechanical load: An approach beyond first-order continuum elasticity
- Graphene's morphology and electronic properties from discrete differential geometry
- Strain-engineering of graphene's electronic structure beyond continuum elasticity
Showing 5 of 8 shared publications
Pablo Rivero
University of Arkansas at Fayetteville (US)
8 shared publications
- Stability and properties of high-buckled two-dimensional tin and lead
- Systematic pseudopotentials from reference eigenvalue sets for DFT calculations
- Intrinsic Defects, Fluctuations of the Local Shape, and the Photo-Oxidation of Black Phosphorus
- Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate
- Anomalous charge and negative-charge-transfer insulating state in cuprate chain compound KCuO2
Showing 5 of 8 shared publications
Mehrshad Mehboudi
University of Arkansas at Fayetteville (US)
8 shared publications
- Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides
- Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers
- Photostrictive Two-Dimensional Materials in the Monochalcogenide Family
- Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions
- Intrinsic Defects, Fluctuations of the Local Shape, and the Photo-Oxidation of Black Phosphorus
Showing 5 of 8 shared publications
John W. Villanova
University of Arkansas at Fayetteville (US)
8 shared publications
- Colloquium : Physical properties of group-IV monochalcogenide monolayers
- Theory of finite-temperature two-dimensional structural transformations in group-IV monochalcogenide monolayers
- Anomalous thermoelectricity at the two-dimensional structural transition of SnSe monolayers
- Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures
- Group-IV monochalcogenide monolayers: Two-dimensional ferroelectrics with weak intralayer bonds and a phosphorenelike monolayer dissociation energy
Showing 5 of 8 shared publications
T. P. Kaloni
University of Arkansas at Fayetteville (US)
7 shared publications
- Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure
- Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
- Photostrictive Two-Dimensional Materials in the Monochalcogenide Family
- Exfoliation energy, quasiparticle band structure, and excitonic properties of selenium and tellurium atomic chains
- From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films
Showing 5 of 7 shared publications
Shiva Prasad Poudel
University of Arkansas at Fayetteville
7 shared publications
In database
- Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
- Metastable piezoelectric group-IV monochalcogenide monolayers with a buckled honeycomb structure
- Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update
- Group-IV monochalcogenide monolayers: Two-dimensional ferroelectrics with weak intralayer bonds and a phosphorenelike monolayer dissociation energy
- Slippery Paraelectric Transition-Metal Dichalcogenide Bilayers
Showing 5 of 7 shared publications
Pradeep Kumar
University of Arkansas at Fayetteville
6 shared publications
In database
- Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides
- Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers
- Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
- Theory of finite-temperature two-dimensional structural transformations in group-IV monochalcogenide monolayers
- Evolution of elastic moduli through a two-dimensional structural transformation
Showing 5 of 6 shared publications
L. Bellaïche
University of Arkansas at Fayetteville
6 shared publications
In database
- Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides
- Photostrictive Two-Dimensional Materials in the Monochalcogenide Family
- Systematic pseudopotentials from reference eigenvalue sets for DFT calculations
- A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy
- Systematic pseudopotentials from reference eigenvalue sets for DFT calculations: Pseudopotential files
Showing 5 of 6 shared publications
Yurong Yang
University of Arkansas at Fayetteville (US)
6 shared publications
- Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides
- Systematic pseudopotentials from reference eigenvalue sets for DFT calculations
- Atomic control of strain in freestanding graphene
- Giant surface charge density of graphene resolved from scanning tunneling microscopy and first-principles theory
- A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy
Showing 5 of 6 shared publications
Jing‐Rong Ji
Max Planck Institute of Microstructure Physics (DE)
6 shared publications
- Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
- Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures
- Defect‐Free Nanowelding of Bilayer SnSe Nanoplates
- Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures
- A lateral valley tunnel junction controlled by ferroelectric polarization
Showing 5 of 6 shared publications
Kainen Utt
University of Arkansas at Fayetteville (US)
5 shared publications
- Systematic pseudopotentials from reference eigenvalue sets for DFT calculations
- Intrinsic Defects, Fluctuations of the Local Shape, and the Photo-Oxidation of Black Phosphorus
- Strain and the optoelectronic properties of nonplanar phosphorene monolayers
- Systematic pseudopotentials from reference eigenvalue sets for DFT calculations: Pseudopotential files
- Intrinsic defects, fluctuations of the local shape, and the photo-oxidation of black phosphorus
Edmund Harriss
University of Arkansas at Fayetteville (US)
5 shared publications
- Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers
- Intrinsic Defects, Fluctuations of the Local Shape, and the Photo-Oxidation of Black Phosphorus
- Strain and the optoelectronic properties of nonplanar phosphorene monolayers
- Quantitative Chemistry and the Discrete Geometry of Conformal Atom-Thin Crystals
- Intrinsic defects, fluctuations of the local shape, and the photo-oxidation of black phosphorus
Alejandro Pacheco-Sanjuán
Federico Santa María Technical University (CL)
5 shared publications
- Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers
- Quantum Paraelastic Two-Dimensional Materials
- Evolution of elastic moduli through a two-dimensional structural transformation
- Size-dependent ferroelectric-to-paraelectric sliding transformations and antipolar-to-ferroelectric topological phase transitions in binary homobilayers
- Quantum paraelastic two-dimensional materials
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