Biography and Research Information
OverviewAI-generated summary
Chris McPherson investigates the impact of strain on excitons in monolayer MoSe2. His recent publication in 2024 details findings from high-temperature physical vapor deposition methods used to tune these properties. McPherson collaborates with researchers Shiva Davari, Hugh Churchill, K. Reynolds, and S. Puri, all from the University of Arkansas at Fayetteville, with whom he has co-authored publications. His research contributes to the field of materials science, specifically focusing on semiconductor materials and their electronic properties. McPherson's academic profile includes a total of five publications and an h-index of one, indicating early-stage research activity.
Metrics
- h-index: 1
- Publications: 5
- Citations: 6
Selected Publications
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Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition (2024)
Collaboration Network
Top Collaborators
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
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