Chris McPherson
Researcher
Also affiliated: University of Alabama (1993)
Unknown Researcher
Research Areas
Biography and Research Information
OverviewAI-generated summary
Chris McPherson's research focuses on the physical properties of semiconductor materials, particularly their response to mechanical strain. His recent publication investigates how biaxial strain influences excitons in monolayer MoSe2, a two-dimensional material. This work was conducted at the University of Arkansas at Fayetteville, where he collaborates with other researchers including Shiva Davari, Hugh Churchill, K. Reynolds, and S. Puri. McPherson's scholarly output includes five publications with a total of seven citations, and his h-index is 2, indicating a nascent but active research presence.
Metrics
- h-index: 2
- Publications: 5
- Citations: 9
Selected Publications
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Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition (2024)
Collaboration Network
Top Collaborators
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoSe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> by high-temperature physical vapor deposition
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