S
Soheil Nouri Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
7 h-index
21 pubs
117 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Soheil Nouri's research focuses on the modeling and characterization of semiconductor devices, particularly millimeter-wave transistors. His work investigates the impact of electromagnetic wave propagation effects on the performance metrics of these transistors, including their cut-off frequency and figures of merit. Nouri also studies the influence of physical layout variations, such as pad and electrode configurations, on transistor performance. He has explored the physics-based modeling of wide GaN-HEMTs and the application of non-isolated high step-up DC-DC converters for photovoltaic systems. Nouri collaborates with Samir El‐Ghazaly and Amirreza Ghadimi Avval at the University of Arkansas at Fayetteville, with whom he has co-authored multiple publications.
Metrics
- h-index: 7
- Publications: 21
- Citations: 117
Selected Publications
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Analysis of Distributed Effects in HRL’s GaN Technologies (2025)
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Exploring the Electrical Behavior of AlGaN HEMTs: a Parametric Analysis on the Barrier Layer Composition (2025)
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Physics Based Modeling of Multi-Finger GaN-HEMTs: Device Width Optimization (2025)
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A Review on the Modeling of Millimeter-Wave Transistors (2025)
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Physics-Based Modeling and Characterization of Wide GaN-HEMTs (2025)
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Investigating Thermal Effects and Mitigation Strategies in Multi-Finger GaN HEMTs (2024)
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Finger Width Effects on Performance of GaN HEMTs (2024)
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Effects of Electrodes Layout on Performance of Millimeter-Wave Transistors (2023)
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A Review of Physics-based Modeling of Millimeter-Wave Transistors (2022)
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Enhancing High-Frequency Performance of Millimeter-Wave Transistors by Optimizing Device Width (2022)
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Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects (2022)
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Impact of Wave Propagations on Figures of Merit in Millimeter-Wave Transistors (2021)
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High Step-up DC/DC Converter with Low Input Current Ripple and Low Voltage Stress on Semiconductors (2021)
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Effects of Pad Layout Variations on the Cut-off Frequency of Millimeter-Wave Transistors (2021)
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Effects of Electromagnetic Wave Propagations in Large-Signal Analysis of Millimeter-Wave Transistors (2021)
Collaboration Network
Top Collaborators
Samir El‐Ghazaly
University of Arkansas at Fayetteville
13 shared publications
In database
- Comprehensive Physics-Based Model for Millimeterwave Transistors
- Impact of Wave Propagations on Figures of Merit in Millimeter-Wave Transistors
- Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects
- Effects of Pad Layout Variations on the Cut-off Frequency of Millimeter-Wave Transistors
- Physics-Based Modeling and Characterization of Wide GaN-HEMTs
Showing 5 of 13 shared publications
Amirreza Ghadimi Avval
University of Arkansas at Fayetteville
9 shared publications
In database
- Impact of Wave Propagations on Figures of Merit in Millimeter-Wave Transistors
- Effects of Pad Layout Variations on the Cut-off Frequency of Millimeter-Wave Transistors
- Physics-Based Modeling and Characterization of Wide GaN-HEMTs
- Effects of Electromagnetic Wave Propagations in Large-Signal Analysis of Millimeter-Wave Transistors
- Enhancing High-Frequency Performance of Millimeter-Wave Transistors by Optimizing Device Width
Showing 5 of 9 shared publications
Mohammad Maalandish
University of Tabriz (IR)
2 shared publications
- A Non-isolated High Step-Up DC-DC Converter Recommended for Photovoltaic Systems
- High Step-up DC/DC Converter with Low Input Current Ripple and Low Voltage Stress on Semiconductors
Bilal Pirzada
University of Arkansas at Fayetteville
2 shared publications
In database
- Physics Based Modeling of Multi-Finger GaN-HEMTs: Device Width Optimization
- Exploring the Electrical Behavior of AlGaN HEMTs: a Parametric Analysis on the Barrier Layer Composition
Larry Hall
University of Arkansas at Fayetteville (US)
2 shared publications
- Exploring the Electrical Behavior of AlGaN HEMTs: a Parametric Analysis on the Barrier Layer Composition
- Analysis of Distributed Effects in HRL’s GaN Technologies
Seyed Hossein Hosseini
University of Tabriz (IR)
1 shared publication
- A Non-isolated High Step-Up DC-DC Converter Recommended for Photovoltaic Systems
Saeed Pourjafar
University of Mohaghegh Ardabili (IR)
1 shared publication
- A Non-isolated High Step-Up DC-DC Converter Recommended for Photovoltaic Systems
Seyed Majid Hashemzadeh
University of Tabriz (IR)
1 shared publication
- A Non-isolated High Step-Up DC-DC Converter Recommended for Photovoltaic Systems
Milad Ghavipanjeh Marangalu
University of Tabriz (IR)
1 shared publication
- A Non-isolated High Step-Up DC-DC Converter Recommended for Photovoltaic Systems
Saed Mahmoud Alilou
University of Tabriz (IR)
1 shared publication
- High Step-up DC/DC Converter with Low Input Current Ripple and Low Voltage Stress on Semiconductors
Seyed Hossein Hosseini
University of Tabriz (IR)
1 shared publication
- High Step-up DC/DC Converter with Low Input Current Ripple and Low Voltage Stress on Semiconductors
Ali Darwish
DEVCOM Army Research Laboratory (US)
1 shared publication
- Finger Width Effects on Performance of GaN HEMTs
Dan Denninghoff
HRL Laboratories (United States) (US)
1 shared publication
- Investigating Thermal Effects and Mitigation Strategies in Multi-Finger GaN HEMTs
Ali M. Darwish
DEVCOM Army Research Laboratory (US)
1 shared publication
- Investigating Thermal Effects and Mitigation Strategies in Multi-Finger GaN HEMTs
Amir Houshang Arab Avval
Skyworks Solutions (United States) (US)
1 shared publication
- Analysis of Distributed Effects in HRL’s GaN Technologies
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