M
Murtadha Alher Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
10 h-index
19 pubs
279 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Murtadha Alher is a faculty member at the University of Arkansas at Fayetteville. His research focuses on the growth and application of semiconductor materials, particularly germanium-tin (GeSn) alloys and silicon carbide (SiC). Alher has investigated the low-pressure growth of pseudomorphic GeSn with specific tin compositions, aiming for applications in mid-infrared lasers operating at cryogenic temperatures.
His work also extends to ternary alloys like C<sub>y</sub>Si<sub>1-x-y</sub>Sn<sub>x</sub> for the development of cost-effective, high-efficiency multi-junction solar cells. Additionally, Alher has contributed to the optimization of fabrication processes for high-power SiC power modules.
Alher has a scholarly record of 19 publications, with a h-index of 10 and 273 total citations. He has collaborated with several researchers at the University of Arkansas at Fayetteville, including Solomon Ojo, Oluwatobi Olorunsola, Shui-Qing Yu, and Wei Du.
Metrics
- h-index: 10
- Publications: 19
- Citations: 279
Selected Publications
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module (2023)
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
Collaboration Network
Top Collaborators
Solomon Ojo
University of Arkansas at Fayetteville
3 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Baohua Li
3 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Shui-Qing Yu
University of Arkansas at Fayetteville
3 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Joshua M. Grant
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Grey Abernathy
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Emmanuel Wanglia
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Samir K. Saha
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Abbas Sabbar
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Wei Du
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
Seyedeh Fahimeh Banihashemian
University of Arkansas at Fayetteville
1 shared publication
In database
- Ternary C<sub>y</sub>Si<sub>1-x-y</sub>Sn<sub>x</sub> Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells
Aboozar Mosleh
University of Arkansas at Fayetteville
1 shared publication
In database
- Ternary C<sub>y</sub>Si<sub>1-x-y</sub>Sn<sub>x</sub> Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells
Hameed A. Naseem
University of Arkansas at Fayetteville
1 shared publication
In database
- Ternary C<sub>y</sub>Si<sub>1-x-y</sub>Sn<sub>x</sub> Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells
Sylvester Amoah
University of Arkansas at Fayetteville
1 shared publication
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
Sylvester Amoha
University of Arkansas at Fayetteville
1 shared publication
In database
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
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