Match tier
Likely match
Presence
Current · Arkansas
Last published
2024
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
M
Murtadha Alher
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: University of Kerbala (2014–2021)
Faculty Researcher
10 h-index
19 pubs
291 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Murtadha Alher is a faculty member at the University of Arkansas at Fayetteville. His research focuses on the growth and application of semiconductor materials, particularly germanium-tin (GeSn) alloys and silicon carbide (SiC). Alher has investigated the low-pressure growth of pseudomorphic GeSn with specific tin compositions, aiming for applications in mid-infrared lasers operating at cryogenic temperatures.
His work also extends to ternary alloys like C<sub>y</sub>Si<sub>1-x-y</sub>Sn<sub>x</sub> for the development of cost-effective, high-efficiency multi-junction solar cells. Additionally, Alher has contributed to the optimization of fabrication processes for high-power SiC power modules.
Alher has a scholarly record of 19 publications, with a h-index of 10 and 273 total citations. He has collaborated with several researchers at the University of Arkansas at Fayetteville, including Solomon Ojo, Oluwatobi Olorunsola, Shui-Qing Yu, and Wei Du.
Metrics
- h-index: 10
- Publications: 19
- Citations: 291
Selected Publications
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module (2023)
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
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GePb Alloy Growth Using Layer Inversion Method (2018)
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Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications (2016)
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Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing (2016)
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CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications (2015)
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Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12% (2015)
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Broadband high efficiency silicon nanowire arrays with radial diversity within diamond-like geometrical distribution for photovoltaic applications (2015)
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Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System (2015)
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CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications (2015)
Collaboration Network
Top Collaborators
Solomon Ojo
University of Arkansas at Fayetteville
3 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Baohua Li
3 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Shui-Qing Yu
University of Arkansas at Fayetteville
3 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Joshua M. Grant
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Grey Abernathy
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Emmanuel Wanglia
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Samir K. Saha
University of Arkansas at Fayetteville (US)
2 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Abbas Sabbar
University of Arkansas at Fayetteville
2 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Wei Du
University of Arkansas at Fayetteville
2 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
Sylvester Amoah
University of Arkansas at Fayetteville
1 shared publication
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
Sylvester Amoha
University of Arkansas at Fayetteville
1 shared publication
In database
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Wei Du
Wilkes University (US)
1 shared publication
- Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
Yuxiang Chen
University of Arkansas at Fayetteville
1 shared publication
In database
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
Liayng Du
University of Arkansas at Fayetteville
1 shared publication
In database
- Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module
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