Match tier Likely match
Presence Current · Arkansas
Last published 2022
Sources OpenAlex · ORCID
Refreshed 2026-08-08

Manal A. Aldawsari

This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.

Researcher

Also affiliated: Center for Nanoscale Science and Technology (2022)

Unknown Researcher

3 h-index 7 pubs 19 cited

Biography and Research Information

OverviewAI-generated summary

Manal A. Aldawsari's research focuses on the modeling and simulation of semiconductor materials for solar cell applications, particularly involving Indium Gallium Nitride (InGaN) structures. Her work has investigated the temperature dependence of these devices, comparing strained and relaxed features in graded InGaN solar cells. Aldawsari has also explored the effects of varying the number of wells on the optical properties of periodic InGaN graded structures. Her publications include comparisons between experimental and simulation results for luminescence properties of GaN/InGaN/GaN double graded structures.

Aldawsari has a h-index of 3 with 7 total publications and 18 citations. She collaborates with several researchers at the University of Arkansas at Fayetteville, including Reem Alhelais, Morgan E. Ware, Rohith Allaparthi, and Md Helal Uddin Maruf, with whom she has co-authored multiple publications. Her most recent publication was in 2022, indicating recent activity in her research area.

Metrics

  • h-index: 3
  • Publications: 7
  • Citations: 19

Selected Publications

  • Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022)
    Frontiers in Materials 4 citations DOI OpenAlex
  • Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022)
    Journal of Photonics for Energy 2 citations DOI OpenAlex
  • Study of simulations of double graded InGaN solar cell structures (2022)
    Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 5 citations DOI OpenAlex
  • Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021)
    Journal of Luminescence 2 citations DOI OpenAlex
  • Effects of numbers of wells on optical properties of periodic InGaN graded structure (2021)
  • Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells) (2020)
    Journal of Electronic Materials 4 citations DOI OpenAlex
  • Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N Layers (2020)
    physica status solidi (b) 2 citations DOI OpenAlex

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Collaboration Network

12 Collaborators 2 Institutions 1 Country

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