Parsian K. Mohseni
Researcher
Also affiliated: Harvard University (2017); Rochester Institute of Technology (2015–2026); University of Illinois Urbana-Champaign (2012–2022); Fanuc (Japan) (2022); Université Joseph Fourier (2017); Universidade Federal de São Carlos (2010); Universidade de São Paulo (2010); Urbana University (2012–2014); Commissariat à l'Énergie Atomique et aux Énergies Alternatives (2017); University of Illinois System (2012); CEA Grenoble (2017); University of Illinois Chicago (2012); Suzhou Institute of Nano-tech and Nano-bionics (2022); Institute of Micro and Nanotechnology (2014); Institut Nanosciences et Cryogénie (2017); Microsystems (United Kingdom) (2018–2021); The University of Texas at Austin (2022); Université Grenoble Alpes (2017); McMaster University (2007–2010)
Faculty Researcher
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Parsian K. Mohseni's research focuses on the development and characterization of novel semiconductor materials and nanostructures for optoelectronic applications. His work involves the fabrication of heterojunctions and nanostructures using techniques such as metal-assisted chemical etching, selective area heteroepitaxy, and van der Waals epitaxy. These investigations often explore the integration of diverse material systems, including III–V compounds, wide-bandgap semiconductors, and two-dimensional materials like molybdenum disulfide.
Recent publications detail the creation of substrate-free optoelectronic devices, the influences of native oxides on heterojunction properties, and the development of nanostructured arrays for light-emitting applications. Mohseni has also studied the performance of optical pumping lasers and the band alignment of heterojunctions using X-ray photoelectron spectroscopy. His research network includes collaborators such as Sudip Acharya, Shui-Qing Yu, Justin Rudie, and Hryhorii Stanchu, all at the University of Arkansas at Fayetteville, with whom he has co-authored multiple publications.
With an h-index of 23 and over 2,200 citations across 89 publications, Mohseni's contributions are recognized within the field of materials science and semiconductor research. His scholarly activity indicates ongoing engagement and recent contributions, with his most recent publication in 2026.
Metrics
- h-index: 23
- Publications: 89
- Citations: 2,237
Selected Publications
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Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf (2026)
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Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf (2026)
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Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf (2026)
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Supplementary document for Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy - 7811645.pdf (2026)
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Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy (2026)
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Characterization of Optothermal Transition Dynamics in Ge₂Sb₂Te₅ and Sb2Te3 via Spatial Light Modulation Microscopy (2026)
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Characterization of optothermal transition dynamics in Ge <sub>2</sub> Sb <sub>2</sub> Te <sub>5</sub> and Sb <sub>2</sub> Te <sub>3</sub> via spatial light modulation microscopy (2026)
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One-Step Fabrication of Si Coupons for Micro-Transfer Printing by MacEtch (2026)
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Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting (2026)
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Demonstration of AlGaAs/GeSn p-i-n diodes (2025)
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Electrolyte-gated junctionless III-V Nanowire transistors: a TCAD-based evaluation (2025)
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Curricula, Courses, Labs and Software for Maximum Semiconductor Manufacturing Experience (2025)
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Mixed-Dimensional Heterostructures Fabricated through Micro-Transfer Printing of InP Thin Films on Monolayer Graphene and MoS2: A Parameter Space Evaluation (2025)
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Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
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Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)
Collaboration Network
Top Collaborators
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
- Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
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