Perry C. Grant
Researcher
University of Arkansas at Fayetteville
faculty
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Biography and Research Information
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Perry C. Grant's research focuses on the development and characterization of semiconductor materials for infrared detection and sensing applications. His work involves the synthesis of novel materials, including mid-wave infrared (MWIR) InGaAs/InAsSb superlattices and quinary GaInAsSbBi alloys, investigated using techniques such as photoluminescence and minority carrier lifetime measurements. Grant has published studies on the utility of Shockley-Read-Hall analysis for extracting defect properties from semiconductor data and the Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum wells.
His research has led to the demonstration of a 4.32 μm cutoff InAsSbBi photodetector, a lattice-matched random alloy solution for MWIR sensing. Further investigations include the development of monolithic Germanium-Tin on Si avalanche photodiodes for infrared detection and the synthesis of high Sn content GeSiSn semiconductors on Si for direct band gap applications in the MWIR spectrum. Grant has a publication record of 61 papers, with 1,122 citations and an h-index of 16. He collaborates with researchers at the University of Arkansas at Fayetteville, including Wei Du, Sylvester Amoah, Justin Rudie, and Shui-Qing Yu.
Metrics
- h-index: 16
- Publications: 61
- Citations: 1,122
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