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Perry C. Grant's research focuses on the development and characterization of semiconductor materials and devices, particularly for mid-wave infrared (MWIR) sensing applications. His work involves the synthesis of novel materials, including quinary GaInAsSbBi and high tin content GeSiSn alloys, grown on silicon or gallium antimonide substrates using molecular beam epitaxy. Grant investigates the fundamental properties of these materials, such as minority carrier lifetime and recombination rates, using techniques like photoluminescence and Shockley-Read-Hall analysis.
His publications detail the demonstration of specific device functionalities, such as a 4.32 μm cutoff InAsSbBi photodetector and monolithic Germanium-Tin on Si avalanche photodiodes for infrared detection. Grant also explores quantum well structures, including SiGeSn/GeSn/SiGeSn single quantum wells with enhanced emission and Auger-limited minority carrier lifetimes in GeSn/SiGeSn quantum wells. He collaborates with researchers at the University of Arkansas at Fayetteville, including Wei Du, Sylvester Amoah, Justin Rudie, and Shui-Qing Yu.
Metrics
- h-index: 16
- Publications: 61
- Citations: 1,151
Selected Publications
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Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
Collaboration Network
Top Collaborators
Preston T. Webster
United States Air Force Research Laboratory (US)
9 shared publications
- Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
- Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
- Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy
- Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing
- Synthesis of High Sn Content Ge<sub>1–<i>x</i>–<i>y</i></sub>Si<sub><i>x</i></sub>Sn<sub><i>y</i></sub> (0.1 < <i>y</i> < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications
Showing 5 of 9 shared publications
Shui-Qing Yu
8 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Showing 5 of 8 shared publications
Christian P. Morath
United States Air Force Research Laboratory (US)
7 shared publications
- Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
- Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
- Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy
- Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing
- Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
Showing 5 of 7 shared publications
Wei Du
7 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
Showing 5 of 7 shared publications
Rigo A. Carrasco
United States Air Force Research Laboratory (US)
6 shared publications
- Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
- Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
- Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy
- Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing
- Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
Showing 5 of 6 shared publications
Julie V. Logan
United States Air Force Research Laboratory (US)
6 shared publications
- Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
- Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy
- Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing
- Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
- Evidence for ionization damage in mid-wave infrared nBn detectors
Showing 5 of 6 shared publications
Grey Abernathy
5 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Sylvester Amoah
5 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Diana Maestas
United States Air Force Research Laboratory (US)
5 shared publications
- Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
- Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing
- Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
- Evidence for ionization damage in mid-wave infrared nBn detectors
- Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors
Baohua Li
University of Arkansas at Fayetteville (US)
5 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array
Justin Rudie
4 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Xiaoxin Wang
4 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Rajesh Kumar
4 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Steven Akwabli
4 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Jifeng Liu
4 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithic Germanium Tin on Si Avalanche Photodiodes
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
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