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Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-06
P
Perry C. Grant
Professor
Also affiliated: New Mexico State University (2021); Dartmouth College (2018); United States Air Force Research Laboratory (2021–2026); Lawrence Berkeley National Laboratory (2010); Wilkes University (2018); University of New Mexico (2020); University of Alabama (2018); Wright-Patterson Air Force Base (2021); Kirtland Air Force Base (2022); University of Massachusetts Boston (2018); United States Air Force (2023); Sandia National Laboratories (2021); Applied Technology Associates (United States) (2020–2021); U.S. Air Force Research Laboratory Sensors Directorate (2021); U.S. Air Force Research Laboratory Space Vehicles Directorate (2020–2024); Arizona State University (2020–2021); The University of Texas at Austin (2020)
16 h-index
69 pubs
1,209 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Perry C. Grant's research focuses on the development and characterization of semiconductor materials, particularly Germanium-Tin (GeSn) alloys, for optoelectronic applications. His work investigates the growth of high-quality GeSn materials, including strain relaxation and composition gradient engineering, to enable low-defect alloy growth. Grant has published on Si-based GeSn photodetectors for mid-infrared imaging and Si-based GeSn lasers operating at specific wavelength ranges and temperatures. His publications also explore device performance, such as high-performance GeSn photodiodes for shortwave infrared imaging and group-IV quantum well lasers on silicon. Additionally, Grant has contributed to understanding fundamental semiconductor physics, including the utility of Shockley-Read-Hall analysis for extracting defect properties from minority carrier lifetime data and recombination rate analysis in mid-wave infrared superlattices. His scholarship metrics include an h-index of 16, with 70 total publications and 1,210 citations. He has collaborated extensively with researchers at the University of Arkansas at Fayetteville, including Wei Du, Steven Akwabli, Sylvester Amoah, and Justin Rudie.
Metrics
- h-index: 16
- Publications: 69
- Citations: 1,209
Positions
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Professor publications 2011–2026University of Arkansas at Fayetteville Institution web page
Selected Publications
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Investigation of GeSn aspect ratio trapping growth up to 8% Sn (2026)arXiv (Cornell University) OpenAlex
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)arXiv (Cornell University) OpenAlex
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System (2020)
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Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging (2019)
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Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si (2019)
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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019)
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Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging (2019)
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Silicon-based GeSn mid-infrared lasers (Conference Presentation) (2019)
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Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications (2019)
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All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K (2018)
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Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications (2018)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
33 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 33 shared publications
Wei Du
University of Arkansas at Fayetteville
26 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 26 shared publications
Wei Dou
University of Arkansas at Fayetteville (US)
24 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
Showing 5 of 24 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
24 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 24 shared publications
Aboozar Mosleh
University of Arkansas at Fayetteville
17 shared publications
In database
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy
- Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
Showing 5 of 17 shared publications
Baohua Li
University of Arkansas at Fayetteville
17 shared publications
In database
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
- Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement
- Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
Showing 5 of 17 shared publications
Greg Sun
University of Massachusetts Boston (US)
17 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
Showing 5 of 17 shared publications
Richard Soref
University of Massachusetts Boston (US)
17 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
Showing 5 of 17 shared publications
Joe Margetis
ASM International (US)
17 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 17 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
17 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
Showing 5 of 17 shared publications
John Tolle
ASM International (US)
17 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 17 shared publications
Seyed Amir Ghetmiri
University of Arkansas at Fayetteville
15 shared publications
In database
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
- Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
- Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor
Showing 5 of 15 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
13 shared publications
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging
- Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor
Showing 5 of 13 shared publications
Sattar Al-Kabi
University of Arkansas at Fayetteville
12 shared publications
In database
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
- Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
Showing 5 of 12 shared publications
Hameed A. Naseem
University of Arkansas at Fayetteville
10 shared publications
In database
- Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
- Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement
- SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
- Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
- Comparison study of the low temperature growth of dilute GeSn and Ge
Showing 5 of 10 shared publications
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