D
Dharmraj Kotekar‐Patil Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Assistant Professor
faculty
10 h-index
34 pubs
1,046 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Dharmraj Kotekar‐Patil is an Assistant Professor at the University of Arkansas at Fayetteville. His research focuses on the design and characterization of advanced semiconductor devices, particularly those based on transition metal dichalcogenides and III-nitride materials. His work investigates phenomena such as electron transport in nanoscale structures, including quantum dots and atomically thin semiconductors. Recent publications explore the enhanced performance of metal-semiconductor-metal ultraviolet photodetectors, the microstructural characterization of high electron mobility transistor layers, and phase-coherent transport in two-dimensional materials. Kotekar‐Patil has co-authored 34 publications, which have garnered over 1,000 citations, and he holds an h-index of 10. His collaborations include work with researchers such as Hugh Churchill, Gokul Acharya, Nathan Tanner Sawyers, and Mohammad Hafijur Rahaman at the University of Arkansas at Fayetteville.
Metrics
- h-index: 10
- Publications: 34
- Citations: 1,046
Selected Publications
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Phase-Coherent Transport in Two-Dimensional Tellurium Flakes (2026)
Collaboration Network
Top Collaborators
S. Tripathy
5 shared publications
- Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface
- Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
- Microstructural characterization of AlxGa1<b>−</b>xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
- Experimental Evaluation of the Response of AlGaN/GaN UV Photodetectors With Square and Hexagonal Nanohole Arrays
- Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-k Dielectric
Ahmed S. Razeen
Nanyang Technological University (SG)
4 shared publications
- Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface
- Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
- Microstructural characterization of AlxGa1<b>−</b>xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
- Experimental Evaluation of the Response of AlGaN/GaN UV Photodetectors With Square and Hexagonal Nanohole Arrays
Jesper Ong
4 shared publications
- Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface
- Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
- Microstructural characterization of AlxGa1<b>−</b>xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
- Experimental Evaluation of the Response of AlGaN/GaN UV Photodetectors With Square and Hexagonal Nanohole Arrays
Hugh Churchill
Quantum Design (United States)
4 shared publications
In database
- Single electron quantum dot in two-dimensional transition metal dichalcogenides
- Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides
- Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-k Dielectric
- Phase-Coherent Transport in Two-Dimensional Tellurium Flakes
Gao Yuan
Singapore Science Park (SG)
3 shared publications
- Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface
- Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
- Microstructural characterization of AlxGa1<b>−</b>xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
Kenji Watanabe
National Institute for Materials Science (JP)
3 shared publications
- Excited state spectroscopy and spin splitting in single layer MoS<sub>2</sub> quantum dots
- Single electron quantum dot in two-dimensional transition metal dichalcogenides
- Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides
Kostya S. Novoselov
National University of Singapore (SG)
3 shared publications
- Excited state spectroscopy and spin splitting in single layer MoS<sub>2</sub> quantum dots
- Single electron quantum dot in two-dimensional transition metal dichalcogenides
- Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides
K. Radhakrishnan
Nanyang Technological University (SG)
3 shared publications
- Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface
- Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
- Experimental Evaluation of the Response of AlGaN/GaN UV Photodetectors With Square and Hexagonal Nanohole Arrays
Jarosław Pawłowski
3 shared publications
- Single electron quantum dot in two-dimensional transition metal dichalcogenides
- Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides
- Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-k Dielectric
Eric X. Tang
Institute of Materials Research and Engineering (SG)
2 shared publications
- Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface
- Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
Pankaj Kumar
National University of Singapore (SG)
2 shared publications
- Single electron quantum dot in two-dimensional transition metal dichalcogenides
- Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides
Takashi Taniguchi
National Institute for Materials Science (JP)
2 shared publications
- Single electron quantum dot in two-dimensional transition metal dichalcogenides
- Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides
Zainul Aabdin
Institute of Materials Research and Engineering (SG)
1 shared publication
- Microstructural characterization of AlxGa1<b>−</b>xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
Zackaria Mahfoud
Agency for Science, Technology and Research (SG)
1 shared publication
- Microstructural characterization of AlxGa1<b>−</b>xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
Hui Kim Hui
Agency for Science, Technology and Research (SG)
1 shared publication
- Microstructural characterization of AlxGa1<b>−</b>xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
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