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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
D
Diandian Zhang
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
Also affiliated: Jiangnan University (2021–2026); Xidian University (2022); Chinese Academy of Sciences (2022–2023); University of Cambridge (2024–2025); Medical Protective (2025); Center for NanoScience (2026); State Key Laboratory on Integrated Optoelectronics (2022–2023); Air Force Engineering University (2018); Textile Research Institute (2025–2026); Air Force General Hospital PLA (2020); Institute of Semiconductors (2022–2023); Beijing Academy of Quantum Information Sciences (2022); PLA Army Engineering University (2017); University of Chinese Academy of Sciences (2022–2023); People's Liberation Army Air Force (2020)
Faculty Researcher
10 h-index
41 pubs
324 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Diandian Zhang's research focuses on the development and characterization of advanced semiconductor materials and devices, with a particular emphasis on photodetectors and thermoelectric applications. Recent work includes the design of bio-inspired core-shell structural aerogels for solar thermoelectricity-freshwater cogeneration and the creation of Sn content gradient GeSn with strain control for high-performance mid-infrared photodetectors. Zhang has also investigated lubricant-grafted omniphobic surfaces for anti-biofouling and drag-reduction properties, as well as high-speed and high-power germanium photodetectors utilizing trapezoidal absorbers. Further studies explore controllable multimodal actuation in printed electrochemical actuators and the growth of strained GeSn/Ge multiple quantum well structures. Zhang has a publication record of 40 articles, with 310 citations, and an h-index of 10. Key collaborators include Nirosh M. Eldose, Wei Du, Hryhorii Stanchu, and Shui-Qing Yu, all from the University of Arkansas at Fayetteville.
Metrics
- h-index: 10
- Publications: 41
- Citations: 324
Selected Publications
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications (2024)
Collaboration Network
Top Collaborators
Nirosh M. Eldose
Center for NanoScience
9 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 9 shared publications
Dinesh Baral
Center for NanoScience
9 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 9 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Showing 5 of 6 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Showing 5 of 6 shared publications
Wei Du
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 6 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
6 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 6 shared publications
Serhii Kryvyi
Center for NanoScience
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
Mourad Benamara
University of Arkansas at Fayetteville
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
Yuriy I. Mazur
Center for NanoScience
4 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
Mohammad Zamani‐Alavijeh
Center for NanoScience
3 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
Fernando Maia de Oliveira
Center for NanoScience
3 shared publications
In database
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
Richard Soref
University of Massachusetts Boston (US)
2 shared publications
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
M. Benamara
University of Arkansas at Fayetteville
2 shared publications
In database
- Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42%
- Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy
Hryhorii Stanchu
Center for NanoScience
2 shared publications
In database
- Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth
- Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001)
Fernando M. de Oliveira
University of Arkansas at Fayetteville
1 shared publication
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
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