D
Diandian Zhang Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
9 h-index
38 pubs
284 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Diandian Zhang's research focuses on the development and characterization of advanced semiconductor materials and devices, particularly within the fields of photodetectors and thermoelectric energy generation. Zhang has investigated germanium-based photodetectors, exploring strain control and trapezoidal absorber designs to enhance performance for mid-infrared applications. Recent work also includes the creation of hybrid perovskite nanocrystal/Ge photodetectors capable of broadband detection from UV to NIR wavelengths, as well as waveguide-coupled lateral Ge/Si avalanche photodetectors. Beyond optoelectronics, Zhang's research extends to bio-inspired materials, including core-shell structural aerogels designed for efficient solar thermoelectricity and freshwater cogeneration. Additional work involves the construction of lubricant-grafted omniphobic surfaces with anti-biofouling and drag-reduction properties. Zhang has collaborated with Oluwatobi Olorunsola, Dinesh Baral, Nirosh M. Eldose, and Hryhorii Stanchu on multiple publications.
Metrics
- h-index: 9
- Publications: 38
- Citations: 284
Selected Publications
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications (2024)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
9 shared publications
In database
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- Study of Group III-V Waveguides on Sapphire Platform for Photonic Integrated Circuits
Showing 5 of 9 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
8 shared publications
In database
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- Study of Group III-V Waveguides on Sapphire Platform for Photonic Integrated Circuits
Showing 5 of 8 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville (US)
8 shared publications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Neutralizing Optical Defects in GeSn
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Showing 5 of 8 shared publications
Dinesh Baral
University of Arkansas at Fayetteville
8 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Neutralizing Optical Defects in GeSn
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Showing 5 of 8 shared publications
Shaohai Fu
Jiangnan University (CN)
7 shared publications
- Bio-inspired core-shell structural aerogel with programmable water release capacity for efficient solar thermoelectricity-freshwater cogeneration
- Lubricant-grafted omniphobic surfaces with anti-biofouling and drag-reduction performances constructed by reactive organic–inorganic hybrid microspheres
- Thermochromic pastes for reversible dynamic simulation of colors and visible reflection spectra of green leaf and soil
- Honeycomb Organogel-Fabric for Osmotic Pressure-Driven Atmospheric Water Harvesting
- A Superslippery Biomimetic Leaf with Self-Driven Water Absorption Performance for Robust Spectral Simulation
Showing 5 of 7 shared publications
Jun Zheng
Chinese Academy of Sciences (CN)
7 shared publications
- Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors
- High-speed and high-power germanium photodetector based on a trapezoidal absorber
- High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR
- Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition
- High-performance waveguide-coupled lateral Ge/Si avalanche photodetector
Showing 5 of 7 shared publications
Yaqing Pang
Chinese Academy of Sciences (CN)
7 shared publications
- Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors
- High-speed and high-power germanium photodetector based on a trapezoidal absorber
- High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR
- Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition
- High-performance waveguide-coupled lateral Ge/Si avalanche photodetector
Showing 5 of 7 shared publications
Buwen Cheng
Chinese Academy of Sciences (CN)
7 shared publications
- Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors
- High-speed and high-power germanium photodetector based on a trapezoidal absorber
- High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR
- Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition
- High-performance waveguide-coupled lateral Ge/Si avalanche photodetector
Showing 5 of 7 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
7 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)
- Neutralizing Optical Defects in GeSn
- Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Showing 5 of 7 shared publications
Xiangquan Liu
Chinese Academy of Sciences (CN)
6 shared publications
- Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors
- High-speed and high-power germanium photodetector based on a trapezoidal absorber
- High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR
- High-performance waveguide-coupled lateral Ge/Si avalanche photodetector
- Photoluminescence characterization of GeSn prepared by rapid melting growth method
Showing 5 of 6 shared publications
Wei Du
University of Arkansas at Fayetteville
6 shared publications
In database
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Study of group III-V waveguides on sapphire platform for photonic integrated circuits
- Study of Group III-V Waveguides on Sapphire Platform for Photonic Integrated Circuits
Showing 5 of 6 shared publications
Yupeng Zhu
Chinese Academy of Sciences (CN)
5 shared publications
- High-speed and high-power germanium photodetector based on a trapezoidal absorber
- High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR
- Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition
- High-performance waveguide-coupled lateral Ge/Si avalanche photodetector
- Growth and characterization of GePb/Ge multiple quantum wells
Qinxing Huang
Chinese Academy of Sciences (CN)
4 shared publications
- Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors
- High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR
- Photoluminescence characterization of GeSn prepared by rapid melting growth method
- Growth and characterization of GePb/Ge multiple quantum wells
Yuhua Zuo
State Key Laboratory on Integrated Optoelectronics (CN)
4 shared publications
- Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors
- Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition
- High-performance waveguide-coupled lateral Ge/Si avalanche photodetector
- Photoluminescence characterization of GeSn prepared by rapid melting growth method
Zhi Liu
Chinese Academy of Sciences (CN)
4 shared publications
- High‐Speed Broadband Hybrid Perovskite Nanocrystals /Ge Photodetector from UV to NIR
- Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition
- Photoluminescence characterization of GeSn prepared by rapid melting growth method
- Growth and characterization of GePb/Ge multiple quantum wells
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