H
Haodong Yang Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
faculty
3 h-index
10 pubs
59 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Haodong Yang's research focuses on the design and fabrication of electronic components, particularly utilizing additive manufacturing techniques. His work includes the development of waveguide components for high-frequency applications, such as D-band diplexers and W-band GSG probes, often employing copper for fabrication. Yang has also investigated coaxial frequency triplers operating in the 100–180 GHz range. In parallel, his research extends to power electronics, with publications detailing gate driver designs for Silicon Carbide (SiC) MOSFETs, focusing on paralleled operation and damping of switching ringing. He has explored SiC-based modular multilevel converters, examining their application in grid-tied systems and medium-frequency operation. Yang's scholarly output includes 10 publications with 58 citations and an h-index of 3. He has collaborated with several researchers at the University of Arkansas at Fayetteville, including Liyang Du, Xia Du, Hui Cao, and Yuxiang Chen.
Metrics
- h-index: 3
- Publications: 10
- Citations: 59
Selected Publications
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Evaluation of grid-tied SiC-based Modular Multilevel Converter with Medium Frequency Operation (2024)
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Optimal Point Derive for SiC MOSFET Switching Ringing Damping with Active Gate Driver Control (2024)
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Design of a Small-Scale SiC-based Modular Multilevel Converter for Experimental Verification of Back-to-back Network Studies (2023)
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An Online High-Frequency Resonant Current Digitalization Method for CLLC Converters (2023)
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A Simple Gate Driver Design for SiC MOSFET Paralleled Operation (2023)
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A Build-in Gate Driver Design for 1.7kV SiC MOSFET Module with 32-chip Paralleled (2023)
Collaboration Network
Top Collaborators
Liyang Du
University of Arkansas at Fayetteville
6 shared publications
In database
- A Simple Gate Driver Design for SiC MOSFET Paralleled Operation
- Design of a Small-Scale SiC-based Modular Multilevel Converter for Experimental Verification of Back-to-back Network Studies
- A Build-in Gate Driver Design for 1.7kV SiC MOSFET Module with 32-chip Paralleled
- An Online High-Frequency Resonant Current Digitalization Method for CLLC Converters
- Optimal Point Derive for SiC MOSFET Switching Ringing Damping with Active Gate Driver Control
Showing 5 of 6 shared publications
H. Alan Mantooth
University of Arkansas at Fayetteville
6 shared publications
In database
- A Simple Gate Driver Design for SiC MOSFET Paralleled Operation
- Design of a Small-Scale SiC-based Modular Multilevel Converter for Experimental Verification of Back-to-back Network Studies
- A Build-in Gate Driver Design for 1.7kV SiC MOSFET Module with 32-chip Paralleled
- An Online High-Frequency Resonant Current Digitalization Method for CLLC Converters
- Optimal Point Derive for SiC MOSFET Switching Ringing Damping with Active Gate Driver Control
Showing 5 of 6 shared publications
Xiaozhu Wen
Xi'an Jiaotong University (CN)
4 shared publications
- A D-Band Waveguide Diplexer Based on Copper Additive Manufacturing
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
- A 100–180-GHz Coaxial Frequency Tripler Based on Copper Additive Manufacturing
- Copper micromachined WR‐2.2 band waveguide and bandpass filter
Zhen Wang
Hebei Semiconductor Research Institute (CN)
4 shared publications
- A D-Band Waveguide Diplexer Based on Copper Additive Manufacturing
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
- A 100–180-GHz Coaxial Frequency Tripler Based on Copper Additive Manufacturing
- Copper micromachined WR‐2.2 band waveguide and bandpass filter
Guanghua Shi
Xi'an Jiaotong University (CN)
4 shared publications
- A D-Band Waveguide Diplexer Based on Copper Additive Manufacturing
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
- A 100–180-GHz Coaxial Frequency Tripler Based on Copper Additive Manufacturing
- Copper micromachined WR‐2.2 band waveguide and bandpass filter
Anxue Zhang
Xi'an Jiaotong University (CN)
4 shared publications
- A D-Band Waveguide Diplexer Based on Copper Additive Manufacturing
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
- A 100–180-GHz Coaxial Frequency Tripler Based on Copper Additive Manufacturing
- Copper micromachined WR‐2.2 band waveguide and bandpass filter
Cheng Guo
Xi'an Jiaotong University (CN)
4 shared publications
- A D-Band Waveguide Diplexer Based on Copper Additive Manufacturing
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
- A 100–180-GHz Coaxial Frequency Tripler Based on Copper Additive Manufacturing
- Copper micromachined WR‐2.2 band waveguide and bandpass filter
Xia Du
University of Arkansas at Fayetteville
4 shared publications
In database
- A Simple Gate Driver Design for SiC MOSFET Paralleled Operation
- A Build-in Gate Driver Design for 1.7kV SiC MOSFET Module with 32-chip Paralleled
- An Online High-Frequency Resonant Current Digitalization Method for CLLC Converters
- Optimal Point Derive for SiC MOSFET Switching Ringing Damping with Active Gate Driver Control
Yang Yu
Chinese Academy of Sciences (CN)
3 shared publications
- A D-Band Waveguide Diplexer Based on Copper Additive Manufacturing
- A 100–180-GHz Coaxial Frequency Tripler Based on Copper Additive Manufacturing
- Copper micromachined WR‐2.2 band waveguide and bandpass filter
Hui Cao
University of Arkansas at Fayetteville
3 shared publications
In database
- A Simple Gate Driver Design for SiC MOSFET Paralleled Operation
- An Online High-Frequency Resonant Current Digitalization Method for CLLC Converters
- Optimal Point Derive for SiC MOSFET Switching Ringing Damping with Active Gate Driver Control
Yuxiang Chen
University of Arkansas at Fayetteville
2 shared publications
In database
- A Build-in Gate Driver Design for 1.7kV SiC MOSFET Module with 32-chip Paralleled
- Optimal Point Derive for SiC MOSFET Switching Ringing Damping with Active Gate Driver Control
Wenxuan Wu
Xi'an Jiaotong University (CN)
1 shared publication
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
Bingkai Liu
China Electronics Technology Group Corporation (CN)
1 shared publication
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
Pu He
China Electronics Technology Group Corporation (CN)
1 shared publication
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
Yuanxi Cao
Xi'an Jiaotong University (CN)
1 shared publication
- A W-Band GSG Probe Fabricated by Metal Additive Manufacturing
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