David Gonzalez Castillo
Researcher
Graduate Student Researcher
Research Areas
Biography and Research Information
OverviewAI-generated summary
David Gonzalez Castillo's research focuses on the development and optimization of power electronics for high-temperature applications. His work includes the demonstration and optimization of a 250°C Low-Temperature Cofired Ceramic (LTCC)-based gate driver, designed for high-density, high-temperature power modules. This research addresses challenges in power electronics operating under extreme thermal conditions. Castillo has published two papers and has accumulated 36 citations, with an h-index of 1. He collaborates with researchers at the University of Arkansas at Fayetteville, including Zhong Chen, Sudharsan Chinnaiyan, Kevin Chen, and Pengyu Lai.
Metrics
- h-index: 1
- Publications: 2
- Citations: 36
Selected Publications
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Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules (2023)
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Design and Optimization of SiC MOSFET Wire Bondless Power Modules (2020)
Collaboration Network
Top Collaborators
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules
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