Rosten Sweeting Data-verified
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Biography and Research Information
OverviewAI-generated summary
Rosten Sweeting's research focuses on the electrical characterization and modeling of semiconductor devices, particularly under cryogenic temperature conditions. His work investigates the performance of various transistors, including Silicon IGBTs, SiC MOSFETs, and GaN HEMTs, which are crucial for applications such as hybrid aircraft. Sweeting has published multiple papers detailing the functionality and performance evaluation of these devices at low temperatures, exploring aspects like gate drivers and control freedoms. He has a history of collaboration with researchers at the University of Arkansas at Fayetteville, including Md Maksudul Hossain and Alan Mantooth, with whom he shares several publications. Sweeting's scholarly output includes 11 publications and has garnered 85 citations, contributing to his h-index of 6.
Metrics
- h-index: 6
- Publications: 11
- Citations: 86
Selected Publications
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Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures (2022)
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Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation (2021)
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Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber (2021)
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Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT (2021)
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Cryogenic Temperature Characterizations of State-of-the-art Cascode 900 V GaN FET (2021)
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Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application (2021)
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Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature (2021)
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Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application (2021)
Collaboration Network
Top Collaborators
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
Showing 5 of 8 shared publications
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
- Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber
Showing 5 of 7 shared publications
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
- Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber
- Cryogenic Temperature Characterizations of State-of-the-art Cascode 900 V GaN FET
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
- Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber
- Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
- Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures
- Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
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