Rosten Sweeting
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Faculty Researcher
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Rosten Sweeting's research focuses on the performance and characterization of semiconductor devices, particularly at cryogenic temperatures. His recent publications investigate the functionality and electrical behavior of Silicon IGBTs, SiC MOSFETs, and GaN HEMTs under low-temperature conditions. These studies are relevant for applications in hybrid aircraft, where components may experience extreme temperature variations. Sweeting has explored gate driver functionality and developed control strategies for hybrid SiC MOSFET and Si IGBT systems. His work also includes modeling these devices to predict their behavior in challenging thermal environments. Sweeting collaborates with several researchers at the University of Arkansas at Fayetteville, including Md Maksudul Hossain and H. Alan Mantooth, with whom he has co-authored multiple publications.
Metrics
- h-index: 6
- Publications: 11
- Citations: 96
Selected Publications
-
Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures (2022)
-
Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation (2021)
-
Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber (2021)
-
Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT (2021)
-
Cryogenic Temperature Characterizations of State-of-the-art Cascode 900 V GaN FET (2021)
-
Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application (2021)
-
Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature (2021)
-
Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application (2021)
-
Variable Gate Voltage Control for Paralleled SiC MOSFETs (2020)
-
Correction: Cryogenic Characterization and Modeling of Silicon Superjunction MOSFET for Power Loss Estimation (2020)
-
Cryogenic Characterization and Modeling of Silicon Superjunction MOSFET for Power Loss Estimation (2020)
Collaboration Network
Top Collaborators
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
Showing 5 of 8 shared publications
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
- Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures
Showing 5 of 7 shared publications
- Functionality and Performance Evaluation of Gate Drivers under Cryogenic Temperature
- Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
- Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber
- Cryogenic Temperature Characterizations of State-of-the-art Cascode 900 V GaN FET
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
- Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures
- Static Characterization and Modeling of GaN HEMT at Cryogenic Temperature in Saber
- Cryogenic Characterization and Modeling of Silicon IGBT for Hybrid Aircraft Application
- Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT
- Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures
- Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application
- Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation
Similar Researchers
Based on overlapping research topics