Pargam Vashishtha
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Postdoctoral Research Fellow
Postdoc Researcher
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Biography and Research Information
OverviewAI-generated summary
Pargam Vashishtha is a Postdoctoral Research Fellow at the University of Arkansas at Fayetteville. His research focuses on the development and characterization of self-powered photodetectors, particularly those utilizing heterostructures of materials like molybdenum disulfide (MoS₂) and gallium nitride (GaN). These devices are designed for broadband spectral response, covering ultraviolet (UVC) to near-infrared (NIR) regions, and exhibit high-temperature reliability.
His recent publications detail the fabrication of GaN nano-towers for self-powered UV photodetectors, and the creation of MoS₂/GaN thin film heterostructures for bidirectional photodetectors with an extended active spectrum. Vashishtha has also investigated MoS₂/Sb₂Se₃ heterostructures for self-powered broadband photodetection and Sb₂Se₃-based photodetectors for high-performance broadband applications. Further work includes thermally resilient, nano-fenced MoS₂-based photodetectors for NIR optical signals and GaN-based pyramidal self-powered UV photodetectors for use in rugged environments.
With a highly cited designation, Vashishtha has authored 88 publications with 1,888 citations, and holds an h-index of 26. His work is marked by recent activity, with publications extending into 2024 and a potential publication in 2025.
Metrics
- h-index: 26
- Publications: 88
- Citations: 1,936
Selected Publications
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Van der Waals Template‐Assisted Growth of Two‐dimensional Sb <sub>2</sub> S <sub>3</sub> (2025)
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Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures (2025)
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A self-powered bi-directional SnS <sub>2</sub> /SnSe heterostructure for an all-in-one optoelectronic logic device (2025)
Collaboration Network
Top Collaborators
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- A self-powered bi-directional SnS <sub>2</sub> /SnSe heterostructure for an all-in-one optoelectronic logic device
- A self-powered bi-directional SnS <sub>2</sub> /SnSe heterostructure for an all-in-one optoelectronic logic device
- A self-powered bi-directional SnS <sub>2</sub> /SnSe heterostructure for an all-in-one optoelectronic logic device
- A self-powered bi-directional SnS <sub>2</sub> /SnSe heterostructure for an all-in-one optoelectronic logic device
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
- Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
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