Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
R
Rajesh Kumar
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Postdoctoral fellow
Also affiliated: Indian Institute of Technology Jodhpur (2016–2022); Acharya Nagarjuna University (2021)
3 h-index
5 pubs
29 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Rajesh Kumar is a postdoctoral fellow at the University of Arkansas at Fayetteville, where his current research focuses on the development of Zn-diffused high-speed 850nm Vertical-cavity surface-emitting lasers (VCSELs) and AlGaInP Red Vertical Light-Emitting Diodes. Previously, as a postdoctoral researcher at the Institute of Electronics, NYCU, Taiwan, he worked on VCSEL and LED fabrication. His earlier work involved 2D Transition Metal Dichalcogenide (TMD) channel devices, also at the Institute of Electronics, NYCU, Taiwan, and optoelectronic materials for next-generation light-emitting diodes during a visiting scholar position at National Taiwan University. Kumar completed his Ph.D. at the Indian Institute of Technology Jodhpur, India, with a focus on thin-film and devices for photothermal applications. He has collaborated with Wei Du, Hryhorii Stanchu, Justin Rudie, and Perry C. Grant at the University of Arkansas.
Metrics
- h-index: 3
- Publications: 5
- Citations: 29
Positions
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Postdoctoral fellow 2022–presentUniversity of Arkansas Electrical Engineering and Computer Science ORCID
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Postdoctoral fellow 2020–2022National Chiao Tung University Electronics Engineering ORCID
Selected Publications
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)arXiv (Cornell University) OpenAlex
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection (2026)
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Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
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Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects (2024)
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Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser (2024)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
Collaboration Network
Top Collaborators
Wei Du
University of Arkansas at Fayetteville
3 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Shui-Qing Yu
University of Arkansas at Fayetteville
3 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Sudip Acharya
University of Arkansas at Fayetteville
2 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
Hryhorii Stanchu
University of Arkansas at Fayetteville
2 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser
Baohua Li
2 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Perry C. Grant
University of Arkansas at Fayetteville
2 shared publications
In database
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
Quang Minh Thai
University of Arkansas at Fayetteville
2 shared publications
In database
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
Abdulla Said Ali
University of Arkansas at Fayetteville
2 shared publications
In database
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
Justin Rudie
University of Arkansas at Fayetteville
2 shared publications
In database
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
Steven Akwabli
University of Arkansas at Fayetteville
2 shared publications
In database
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
Yunsheng Qiu
University of Arkansas at Fayetteville
2 shared publications
In database
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
Wei Du
University of Arkansas at Fayetteville
2 shared publications
In database
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
Shui-Qing Yu
University of Arkansas at Fayetteville
2 shared publications
In database
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
Solomon Ojo
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
Murtadha Alher
University of Arkansas at Fayetteville
1 shared publication
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
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