Rajesh Kumar
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Postdoctoral fellow
Also affiliated: Indian Institute of Technology Jodhpur (2016–2022); Acharya Nagarjuna University (2021)
Postdoc Researcher
Research Areas
Biomedical Subjects
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Biography and Research Information
OverviewAI-generated summary
Rajesh Kumar is a postdoctoral fellow at the University of Arkansas at Fayetteville, where his research focuses on the development of GeSn detectors. His prior work includes research at the Institute of Electronics, NYCU, Taiwan, investigating vertical-cavity surface-emitting lasers (VCSELs) and LEDs, as well as 2D Transition Metal Dichalcogenide (TMD) channel devices. He also conducted research on optoelectronic materials and devices for next-generation light-emitting diodes as a visiting scholar at National Taiwan University. Kumar earned his Ph.D. in thin-film and devices for photothermal applications from the Indian Institute of Technology Jodhpur. His current work involves the development of Zn-diffused high-speed 850nm VCSELs and AlGaInP Red Vertical Light-Emitting Diodes. He has collaborated with researchers including Wei Du, Hryhorii Stanchu, Justin Rudie, and Perry C. Grant at the University of Arkansas.
Metrics
- h-index: 3
- Publications: 5
- Citations: 29
Selected Publications
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection (2026)
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Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
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Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects (2024)
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Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser (2024)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
Collaboration Network
Top Collaborators
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser
- Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects
- Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects
- Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects
- Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects
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