Rajesh Kumar Data-verified

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Postdoctoral fellow

Last publication 2024 Last refreshed 2026-05-23

postdoc

23 h-index 169 pubs 3,639 cited

Biography and Research Information

OverviewAI-generated summary

Rajesh Kumar is a postdoctoral fellow at the University of Arkansas at Fayetteville, where his current research focuses on the development of Zn-diffused high-speed 850nm Vertical-cavity surface-emitting lasers (VCSELs) and AlGaInP Red Vertical Light-Emitting Diodes (LEDs). Previously, as a postdoctoral researcher at the Institute of Electronics, NYCU, Taiwan, he worked on VCSEL and LED fabrication. His prior research experience includes work on 2D Transition Metal Dichalcogenide (TMD) channel devices, also at the Institute of Electronics, NYCU. He also conducted research on optoelectronic materials and devices for next-generation LED applications as a visiting scholar at the Chemical Engineering Department, National Taiwan University. Kumar completed his Ph.D. in thin-film and devices for photothermal applications at the Indian Institute of Technology Jodhpur, India. His scholarship metrics include an h-index of 3, with 5 total publications and 17 total citations.

Metrics

  • h-index: 23
  • Publications: 169
  • Citations: 3,639

Selected Publications

  • Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
  • Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects (2024)
    11 citations DOI OpenAlex
  • Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser (2024)
  • Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
    17 citations DOI OpenAlex

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Collaboration Network

6 Collaborators 4 Institutions 1 Country

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