Morgan E. Ware Source Confirmed
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Assistant Professor
University of Arkansas at Fayetteville
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Biography and Research Information
OverviewAI-generated summary
Morgan E. Ware investigates semiconductor quantum structures and devices, with a focus on materials used in solar cells and optoelectronic applications. Their research examines the properties of indium arsenide (InAs) nanostructures and their impact on solar cell efficiency. Ware's work also delves into the modeling of strain in materials with significant lattice mismatches, using Raman shift as a diagnostic tool. This includes studying heterojunctions like β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> and their band offsets.
Further research by Ware explores the optical properties of quantum dots, including their photoluminescence characteristics and exciton dynamics, particularly in systems like InGaAs/GaAs and InGaAs/InAlAs quantum wells. Investigations also extend to amorphous carbon nanofilms, analyzing their linear and nonlinear optical behavior. Ware is a principal investigator on a National Science Foundation grant totaling $3,000,000, focused on bridging the gap between 2D quantum materials and engineering in STEM education.
Ware's scholarly output includes 202 publications with 2,814 citations and an h-index of 23, designating them as a highly cited researcher. They maintain active collaborations with researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur, Reem Alhelais, Md Helal Uddin Maruf, and Rohith Allaparthi.
Metrics
- h-index: 23
- Publications: 202
- Citations: 2,814
Selected Publications
- Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026) DOI
- Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025) DOI
- Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025) DOI
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025) DOI
- Investigation of carrier dynamics by steady-state and transient photoluminescence for a quaternary InGaAsSb/GaAs multiple quantum wells heterostructure (2025) DOI
- Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025) DOI
- Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots (2025) DOI
- Optical spin polarization by coherent magnetoabsorption generation (2025) DOI
- Optical characterization of the type-II hybrid nanostructure with the GaSb/GaAs quantum dots coupled to an InGaAs/GaAs quantum well (2025) DOI
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025) DOI
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024) DOI
- Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux (2024) DOI
- Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk (2024) DOI
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties (2024) DOI
- Luminescence efficiency and carrier dynamics for InGaAs/GaAs surface quantum dots in coupled heterostructures (2024) DOI
Federal Grants 1 $3,000,000 total
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