M
Morgan E. Ware Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Federal Grant PI
High Impact
Assistant Professor
faculty
23 h-index
204 pubs
2,844 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Morgan E. Ware is an Assistant Professor at the University of Arkansas at Fayetteville. Ware's research interests lie in the study of semiconductor quantum structures and their applications, particularly in the area of solar cells and optical properties of materials. This work involves investigating materials such as InAs, InGaAs, GaAs, and β-(Al,Ga)₂O₃, focusing on phenomena like quantum dots, heterojunctions, and exciton dynamics.
Ware has authored or co-authored over 200 publications, with a citation count exceeding 2,800 and an h-index of 23. Recent publications explore topics including the efficiency of InAs nanostructures in solar cells, modeling Raman shifts in mismatched materials, and the optical properties of amorphous carbon nanofilms. Further research has examined exciton localization in quantum wells and the band offsets of β-(AlₓGa₁₋ₓ)₂O₃/β-Ga₂O₃ heterojunctions.
Ware is also a Principal Investigator on a $3,000,000 National Science Foundation grant (NRT-QISE) focused on bridging the gap between 2D quantum materials and engineering within STEM education. Key collaborators include Yuriy I. Mazur, Reem Alhelais, Md Helal Uddin Maruf, and Rohith Allaparthi, all from the University of Arkansas at Fayetteville, with whom Ware has shared numerous publications.
Metrics
- h-index: 23
- Publications: 204
- Citations: 2,844
Selected Publications
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Probing the Broken Time Reversal Symmetry in Monolayers Using the Z-Scan Technique (2025)
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Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025)
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Investigation of carrier dynamics by steady-state and transient photoluminescence for a quaternary InGaAsSb/GaAs multiple quantum wells heterostructure (2025)
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Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
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Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots (2025)
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Optical spin polarization by coherent magnetoabsorption generation (2025)
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Optical characterization of the type-II hybrid nanostructure with the GaSb/GaAs quantum dots coupled to an InGaAs/GaAs quantum well (2025)
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Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux (2024)
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Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk (2024)
Federal Grants 1 $3,000,000 total
NSF
PI
Aug 2023 - Jul 2028
NRT-QISE: Bridging the Gap Between 2D Quantum Materials and Engineering in STEM Education
Collaboration Network
Top Collaborators
Yuriy I. Mazur
University of Arkansas at Fayetteville
27 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
Showing 5 of 27 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
21 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
Showing 5 of 21 shared publications
Baolai Liang
University of California, Los Angeles (US)
14 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures
Showing 5 of 14 shared publications
Reem Alhelais
University of Arkansas at Fayetteville
12 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Low resistance Ohmic contacts to graded InGaN
Showing 5 of 12 shared publications
Mirsaeid Sarollahi
Intel (United States) (US)
11 shared publications
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Low resistance Ohmic contacts to graded InGaN
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Showing 5 of 11 shared publications
Malak Refaei
Jazan University (SA)
10 shared publications
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
Showing 5 of 10 shared publications
Yingnan Guo
Hebei University (CN)
9 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures
- Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness
- Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures
Showing 5 of 9 shared publications
Md Helal Uddin Maruf
University of Arkansas at Fayetteville
8 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 8 shared publications
Shufang Wang
Hebei University (CN)
8 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
- Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness
Showing 5 of 8 shared publications
Rohith Allaparthi
University of Arkansas at Fayetteville
7 shared publications
In database
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Showing 5 of 7 shared publications
Pijush K. Ghosh
University of Arkansas at Fayetteville
6 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Low resistance Ohmic contacts to graded InGaN
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Showing 5 of 6 shared publications
Husam H. Abu‐Safe
German Jordanian University (JO)
6 shared publications
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties
- Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111)
- Investigating the linear and nonlinear optical properties of Al alloyed Ni nanofilms in the cw regime
Showing 5 of 6 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
6 shared publications
In database
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties
Showing 5 of 6 shared publications
M. D. Teodoro
Universidade Federal de São Carlos (BR)
6 shared publications
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk
- Optical spin polarization by coherent magnetoabsorption generation
- Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells
Showing 5 of 6 shared publications
Ying Wang
Hebei University (CN)
6 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures
- Photoluminescence Characterization of Interlayer Carrier Injection from Ingaas Quantum Well to Ingaas Surface Quantum Dots with Respect to Gaas Spacer Thickness
Showing 5 of 6 shared publications
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