Morgan E. Ware
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Assistant Professor
Also affiliated: United States Air Force Research Laboratory (2020); Argonne National Laboratory (1997); United States Naval Research Laboratory (2003–2006); North Carolina State University (1999–2005); California NanoSystems Institute (2014); National Academy of Sciences of Ukraine (2017); University of Electronic Science and Technology of China (2017); University of California, Los Angeles (2014); Brown University (1971); Center for NanoScience (2014–2025); Yale University (2014); Center Point (2020); Center for Nanoscale Science and Technology (2022); Ohio University (2008); V.E. Lashkaryov Institute of Semiconductor Physics (2017); Ioffe Institute (2004–2006)
Faculty Researcher
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Morgan E. Ware's research focuses on the investigation of semiconductor materials and their application in optoelectronic devices, particularly solar cells. Ware has published work on indium arsenide (InAs) nanostructures, exploring methods to improve solar cell efficiency through submonolayer quantum dots. Other research areas include the photoluminescence study of exciton localization in various quantum well heterostructures, such as InGaAs/InAlAs on InP substrates and GaAsSb/GaAs quantum wells, examining complex exciton dynamics and temperature-dependent behaviors.
Ware also investigates the optical properties of materials, including amorphous carbon nanofilms, and has studied the coherent-interface-induced strain in large lattice-mismatched materials using Raman shift modeling. Further work includes analyzing the band offsets of β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> heterojunctions. Ware's research network includes frequent collaborators at the University of Arkansas at Fayetteville, such as Yuriy I. Mazur and Gregory J. Salamo.
Ware is a principal investigator on the NSF-funded NRT-QISE grant, "Bridging the Gap Between 2D Quantum Materials and Engineering in STEM Education," which totals $3,000,000. With an h-index of 23 and over 2,800 citations across 204 publications, Ware is recognized as a highly cited researcher.
Metrics
- h-index: 23
- Publications: 205
- Citations: 2,881
Selected Publications
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Probing the Broken Time Reversal Symmetry in Monolayers Using the Z-Scan Technique (2025)
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Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025)
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Investigation of carrier dynamics by steady-state and transient photoluminescence for a quaternary InGaAsSb/GaAs multiple quantum wells heterostructure (2025)
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Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
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Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots (2025)
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Optical spin polarization by coherent magnetoabsorption generation (2025)
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Optical characterization of the type-II hybrid nanostructure with the GaSb/GaAs quantum dots coupled to an InGaAs/GaAs quantum well (2025)
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Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025)
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Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024)
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Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux (2024)
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Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk (2024)
Federal Grants 1 $3,000,000 total
NRT-QISE: Bridging the Gap Between 2D Quantum Materials and Engineering in STEM Education
Collaboration Network
Top Collaborators
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
Showing 5 of 27 shared publications
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
Showing 5 of 21 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures
- Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
Showing 5 of 14 shared publications
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Low resistance Ohmic contacts to graded InGaN
Showing 5 of 11 shared publications
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Low resistance Ohmic contacts to graded InGaN
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Showing 5 of 10 shared publications
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
Showing 5 of 9 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures
- Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness
- Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures
Showing 5 of 8 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation
Showing 5 of 7 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
- Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness
Showing 5 of 7 shared publications
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Low resistance Ohmic contacts to graded InGaN
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering
Showing 5 of 6 shared publications
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
- Effects of numbers of wells on optical properties of periodic InGaN graded structure
Showing 5 of 6 shared publications
- Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation
- The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties
- Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111)
- Investigating the linear and nonlinear optical properties of Al alloyed Ni nanofilms in the cw regime
Showing 5 of 6 shared publications
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Photoconductivity of GeSn thin films with up to 15% Sn content
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties
Showing 5 of 6 shared publications
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk
- Optical spin polarization by coherent magnetoabsorption generation
- Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells
Showing 5 of 6 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
- Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness
- Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures
Showing 5 of 6 shared publications
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