Xuehuan Ma
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Also affiliated: Hainan Normal University (2024)
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Biography and Research Information
OverviewAI-generated summary
Xuehuan Ma's research focuses on the development and study of semiconductor devices, particularly those utilizing Germanium-Tin (GeSn) quantum wells. Ma has investigated GeSn quantum-well lasers capable of operating at temperatures up to 150 K and explored GeSn selective area growth for applications in Short-Wave Infrared (SWIR) light detection. This work includes the systematic study of high-performance GeSn photodiodes designed for SWIR and extended SWIR detection, featuring thick absorbers for enhanced performance. Additionally, Ma has published research on 1550 nm human eye-safe, high-power tunnel junction quantum well lasers.
Metrics
- h-index: 1
- Publications: 4
- Citations: 4
Selected Publications
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Dual-barrier GeSn quantum-well lasers with operation up to 150 K (2026)
Collaboration Network
Top Collaborators
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
- Dual-barrier GeSn quantum-well lasers with operation up to 150 K
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