Y
Yuriy I. Mazur Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
High Impact
Professor
faculty
26 h-index
195 pubs
2,484 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Yuriy I. Mazur's research program focuses on the synthesis, characterization, and application of semiconductor materials, particularly quantum dots and nanostructures. His work investigates the physical properties of these materials, including their optical and electronic characteristics, and explores their potential use in advanced devices. Recent publications highlight his investigations into indium-based nanostructures for solar cell applications, aiming to improve efficiency through submonolayer quantum dot integration. He has also explored high operating temperature mid-infrared detectors based on InGaAs/GaAs quantum dots and examined the photoluminescence properties of various quantum well and quantum dot systems under different conditions.
Mazur's research extends to the study of strain relief and material diffusion in semiconductor heterostructures, such as GeSn epilayers and Ge/GeSn alloys grown on GaAs substrates. His investigations also encompass the development and characterization of sensors, including micro-Hall effect sensors utilizing AlN/GaN heterostructures, with a focus on their temperature and frequency response. He has published extensively on these topics, with a total of 190 publications and an h-index of 25. His collaborative network includes several researchers from the University of Arkansas at Fayetteville, with whom he has co-authored numerous publications.
Metrics
- h-index: 26
- Publications: 195
- Citations: 2,484
Selected Publications
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Optical spin polarization by coherent magnetoabsorption generation (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025)
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Temperature dependent optical properties of ultrathin InAs quantum well (2024)
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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024)
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024)
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Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024)
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties (2024)
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Luminescence efficiency and carrier dynamics for InGaAs/GaAs surface quantum dots in coupled heterostructures (2024)
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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
46 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
Showing 5 of 46 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
28 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 28 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
23 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 23 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
20 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 20 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
20 shared publications
In database
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
Showing 5 of 20 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville (US)
14 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Thermal stability study of gallium nitride based magnetic field sensor
Showing 5 of 14 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
13 shared publications
In database
- Thermal stability study of gallium nitride based magnetic field sensor
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Study of simulations of double graded InGaN solar cell structures
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features
Showing 5 of 13 shared publications
Baolai Liang
University of California, Los Angeles (US)
9 shared publications
- Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect
- Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
- Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
- Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures
Showing 5 of 9 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
9 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 9 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville (US)
9 shared publications
- Thermal stability study of gallium nitride based magnetic field sensor
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 9 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
8 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 8 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
7 shared publications
- Strain-driven anomalous elastic properties of GeSn thin films
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Chen Li
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Calbi Gunder
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
7 shared publications
In database
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 7 shared publications
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