Yuriy I. Mazur Source Confirmed
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Professor
University of Arkansas at Fayetteville
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Biography and Research Information
OverviewAI-generated summary
Yuriy I. Mazur is a Professor at the University of Arkansas at Fayetteville. His research focuses on the study of semiconductor materials and devices, particularly those involving quantum dots and alloys like GeSn and InGaAs/GaAs. Mazur investigates the correlation between material properties, such as dislocation generation and strain relief, and their performance in optoelectronic devices. His work has explored the growth of materials like Ge and direct bandgap GeSn on GaAs substrates using molecular beam epitaxy, and the impact of annealing processes on the photoluminescence of these alloys.
Mazur's research extends to the application of these materials in areas such as mid-infrared quantum cascade detectors and solar cells. He has published work on improving solar cell efficiency through submonolayer quantum dots and on high operating temperature detectors. His publications also address theoretical aspects, including a new approach for modeling Raman shifts in materials with large lattice mismatches. Mazur has a significant publication record, with 189 total publications and 2,440 citations, and an h-index of 25. He actively collaborates with researchers at the University of Arkansas at Fayetteville, including Fernando Maia de Oliveira, Morgan E. Ware, Hryhorii Stanchu, and Shui-Qing Yu.
Metrics
- h-index: 25
- Publications: 189
- Citations: 2,440
Selected Publications
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
- Optical spin polarization by coherent magnetoabsorption generation (2025) DOI
- Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures (2025) DOI
- Temperature dependent optical properties of ultrathin InAs quantum well (2024) DOI
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024) DOI
- Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024) DOI
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024) DOI
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024) DOI
- Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties (2024) DOI
- Luminescence efficiency and carrier dynamics for InGaAs/GaAs surface quantum dots in coupled heterostructures (2024) DOI
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024) DOI
- Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024) DOI
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024) DOI
- Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells (2024) DOI
- Effects of ion implantation with arsenic and boron in germanium-tin layers (2024) DOI
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