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Current · Arkansas
Last published
2026
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OpenAlex · ORCID
Refreshed
2026-10-05
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Yuriy I. Mazur
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
High Impact
Professor
Also affiliated: California NanoSystems Institute (2010–2014); National Academy of Sciences of Ukraine (1990–2017); University of Electronic Science and Technology of China (2017); University of California, Los Angeles (2010–2014); University College Cork (2010); Ferdinand-Braun-Institut (2002); Yale University (2014); Humboldt-Universität zu Berlin (1998–2002); Munster Technological University (2010); V.E. Lashkaryov Institute of Semiconductor Physics (1998–2017); Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy (2001–2003); Cork Institute of Technology (2010); State Key Laboratory of Electronic Thin Films and Integrated Devices (2017); Tyndall National Institute (2010)
37 h-index
390 pubs
5,746 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Yuriy I. Mazur's research focuses on the self-organization and optical properties of semiconductor nanostructures, particularly indium-containing quantum dots. His work has investigated the fabrication and characterization of these nanostructures, exploring their potential for applications in optoelectronic devices. Publications detail the control of ordering in three-dimensional quantum dot lattices, the self-organization of quantum dot pairs using high-temperature droplet epitaxy, and the fabrication of quantum dot chains. Mazur has also studied hybrid metal-semiconductor nanostructures, examining coherent exciton-surface-plasmon-polariton interactions. His research has contributed to the development of InAs/GaAs quantum-dot lasers monolithically grown on silicon substrates and infrared photodetectors utilizing strain-free GaAs quantum dot pairs.
Metrics
- h-index: 37
- Publications: 390
- Citations: 5,746
Positions
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Professor publications 2002–2026University of Arkansas at Fayetteville Listing
Selected Publications
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Engineering Exciton <i>g</i> ‐Factors With Light in Type‐II Heterostructures (2026)
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Hopping conduction in GeSiSn alloys: Impact of structural disorder on electrical transport (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026)
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Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State Mixing (2025)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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Investigation of carrier dynamics by steady-state and transient photoluminescence for a quaternary InGaAsSb/GaAs multiple quantum wells heterostructure (2025)
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Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025)
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Modification of the Morphology and Light-Emitting Properties of InGaAs/GaAs Uncapped Quantum Dots by <i>γ</i>-Irradiation (2025)
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Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
258 shared publications
In database
- Coherent Exciton–Surface-Plasmon-Polariton Interaction in Hybrid Metal-Semiconductor Nanostructures
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)
- Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation
- Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
Showing 5 of 258 shared publications
Morgan E. Ware
University of Arkansas at Fayetteville
109 shared publications
In database
- Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
- Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
- Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures
Showing 5 of 109 shared publications
V. G. Dorogan
University of Arkansas at Fayetteville (US)
73 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
- Voltage recovery in charged InAs/GaAs quantum dot solar cells
Showing 5 of 73 shared publications
Baolai Liang
California NanoSystems Institute (US)
57 shared publications
- Low density InAs quantum dots grown on GaAs nanoholes
- Self‐Organization of InAs Quantum‐Dot Clusters Directed by Droplet Homoepitaxy
- Localized formation of InAs quantum dots on shallow-patterned GaAs(100)
- Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain
- Development of continuum states in photoluminescence of self-assembled InGaAs∕GaAs quantum dots
Showing 5 of 57 shared publications
Zh. M. Wang
University of Electronic Science and Technology of China (CN)
56 shared publications
- InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
- Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation
- Low density InAs quantum dots grown on GaAs nanoholes
- Interdot carrier transfer in asymmetric bilayer InAs∕GaAs quantum dot structures
- Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures
Showing 5 of 56 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
52 shared publications
In database
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
Showing 5 of 52 shared publications
G. G. Tarasov
National Academy of Sciences of Ukraine (UA)
50 shared publications
- Interdot carrier transfer in asymmetric bilayer InAs∕GaAs quantum dot structures
- Transient luminescence of dense InAs/GaAs quantum dot arrays
- Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures
- Development of continuum states in photoluminescence of self-assembled InGaAs∕GaAs quantum dots
- Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures
Showing 5 of 50 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
42 shared publications
In database
- Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
- Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
- Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on a Ge/Si(001) substrate
- Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration
- Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
Showing 5 of 42 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
41 shared publications
In database
- Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices
- X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures
- The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study
Showing 5 of 41 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
37 shared publications
- Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
- The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study
- Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
- Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
- Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy
Showing 5 of 37 shared publications
Jiang Wu
University of Arkansas at Fayetteville (US)
33 shared publications
- 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
- 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
- Voltage recovery in charged InAs/GaAs quantum dot solar cells
Showing 5 of 33 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
33 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- GaAs layer on c-plane sapphire for light emitting sources
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
Showing 5 of 33 shared publications
E. Marega
Universidade de São Paulo (BR)
30 shared publications
- Aharonov-Bohm Interference in Neutral Excitons: Effects of Built-In Electric Fields
- Laterally aligned quantum rings: From one-dimensional chains to two-dimensional arrays
- Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy
- Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures
- Shape transformation during overgrowth of InGaAs∕GaAs(001) quantum rings
Showing 5 of 30 shared publications
Yurii Maidaniuk
University of Arkansas at Fayetteville
28 shared publications
In database
- Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
- Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
- Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
- Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
Showing 5 of 28 shared publications
Jihoon Lee
Kwangwoon University (KR)
26 shared publications
- InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
- Low density InAs quantum dots grown on GaAs nanoholes
- Strain-free ring-shaped nanostructures by droplet epitaxy for photovoltaic application
- Self‐Organization of InAs Quantum‐Dot Clusters Directed by Droplet Homoepitaxy
- Energy Transfer within Ultralow Density Twin InAs Quantum Dots Grown by Droplet Epitaxy
Showing 5 of 26 shared publications
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