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Current · Arkansas
Last published
2025
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OpenAlex · ORCID
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2026-10-06
H
Hameed A. Naseem
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
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Also affiliated: Texas Tech University (1997); Wilkes University (2014); University of Massachusetts Boston (2014–2016); Virginia Tech (1985); University of California, Berkeley (2005)
29 h-index
204 pubs
3,432 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Hameed A. Naseem's research focuses on the development of novel semiconductor materials for next-generation photovoltaic devices. His work includes the creation of ternary alloys, such as CSiSn, aiming for low-cost, high-efficiency solar cells, including multi-junction designs. Naseem also investigates the synergistic effects of doping on the photocatalytic and energy storage performance of metal oxide-based zeolites and trimetallic oxides.
Naseem has published extensively in the field, with a h-index of 29 and over 3,300 citations, indicating a significant impact in his research areas. He leads an active research group at the University of Arkansas at Fayetteville and collaborates with other faculty members, including Aboozar Mosleh and Seyedeh Fahimeh Banihashemian, on shared publications. His recent publications span from 2021 to 2025, demonstrating ongoing activity and contributions to materials science and renewable energy research.
Metrics
- h-index: 29
- Publications: 204
- Citations: 3,432
Selected Publications
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High-Efficiency Triple-Junction Solar Cell Design using C<sub>y</sub>Si<sub>1-x-y</sub>Sn<sub>x</sub> Alloys on Low-Cost substrates (2025)
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Growth of CySi1-x-ySnx Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells (2024)
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Ternary CySi1-x-ySnx Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells (2021)
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Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition (2020)
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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System (2020)
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Thermally-induced nonlinear optical properties of silver nano-films near surface plasmon resonance (2020)
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Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime (2020)
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UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices (2019)
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Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications (2019)
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Ellipsometric study of aluminum-nickel nano-films for plasmonic application (2018)
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Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement (2018)
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GePb Alloy Growth Using Layer Inversion Method (2018)
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Thermal Stability of Hydrogenated Boron Emitters (2017)
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Comparison study of the low temperature growth of dilute GeSn and Ge (2017)
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Enhancing the Performance of the Microwave Absorbing Materials by Using Dielectric Resonator Arrays (2017)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
68 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 68 shared publications
W. Duane Brown
University of Arkansas at Fayetteville (US)
57 shared publications
- A review of techniques for polishing and planarizing chemically vapor-deposited (CVD) diamond films and substrates
- Interaction of aluminum with hydrogenated amorphous silicon at low temperatures
- Aluminum-induced crystallization and counter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures
- A Critical Review of Chemical Vapor-Deposited (CVD) Diamond for Electronic Applications
- A preliminary investigation of the effect of post-deposition polishing of diamond films on the machining behavior of diamond-coated cutting tools
Showing 5 of 57 shared publications
Aboozar Mosleh
University of Arkansas at Fayetteville
54 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
Showing 5 of 54 shared publications
Seyed Amir Ghetmiri
University of Arkansas at Fayetteville
44 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
Showing 5 of 44 shared publications
Wei Du
University of Arkansas at Fayetteville
43 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 43 shared publications
Greg Sun
University of Massachusetts Boston (US)
37 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 37 shared publications
Richard A. Soref
University of Massachusetts Boston (US)
36 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 36 shared publications
Husam Hamza Abu-Safe
German Jordanian University (JO)
36 shared publications
- Chlorine-doped CdS thin films from CdCl2-mixed CdS powder
- Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering
- Langmuir probe and optical emission studies in a radio frequency (rf) magnetron plasma used for the deposition of hydrogenated amorphous silicon
- Large-grain poly-crystalline silicon thin films prepared by aluminum-induced crystallization of sputter-deposited hydrogenated amorphous silicon
- Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime
Showing 5 of 36 shared publications
John Tolle
ASM International (US)
35 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 35 shared publications
Joe Margetis
ASM International (US)
30 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 30 shared publications
Benjamin R. Conley
University of Arkansas at Fayetteville (US)
26 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
- Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx
- Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff
Showing 5 of 26 shared publications
Simon S. Ang
University of Arkansas at Fayetteville
21 shared publications
In database
- Infrared studies of hydrogenated amorphous carbon (a-C:H) and its alloys (a-C:H,N,F)
- A comparison of mechanical lapping versus chemical-assisted mechanical polishing and planarization of chemical vapor deposited (CVD) diamond
- Photoluminescence studies of hydrogenated amorphous carbon and its alloys
- Modeling and electrical analysis of seamless high off-chip connectivity (SHOCC) interconnects
- A study of the high frequency performance of thin film capacitors for electronic packaging
Showing 5 of 21 shared publications
Baohua Li
19 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 19 shared publications
Mohammed Shahedul Haque
University of Arkansas at Fayetteville (US)
17 shared publications
- Aluminum-induced crystallization and counter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures
- Characterization of High Rate Deposited PECVD Silicon Dioxide Films for MCM Applications
- Correlation of stress behavior with hydrogen-related impurities in plasma-enhanced chemical vapor deposited silicon dioxide films
- Post-deposition processing of low temperature PECVD silicon dioxide films for enhanced stress stability
- Comparison of infrared, Raman, photoluminescence, and x-ray photoelectron spectroscopy for characterizing arc-jet-deposited diamond films
Showing 5 of 17 shared publications
Sattar Al-Kabi
University of Arkansas at Fayetteville
16 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
- Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
- Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%
Showing 5 of 16 shared publications
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