Shui-Qing Yu
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Professor
Also affiliated: Dartmouth College (2018); Shanghai University (2011); Northeastern University (2025); Wilkes University (2014–2022); University of Alabama (2018); Anhui University of Science and Technology (2014); Peking University (2005); Center for NanoScience (2015); University of Massachusetts Boston (2014–2018); Photonics (United States) (2002–2007); Sandia National Laboratories (2025); R2M Solution (Italy) (2025); Center for Integrated Nanotechnologies (2025); Material Sciences (United States) (2013); Arizona State University (2001–2012); Shandong Agricultural University (2025); Northeastern University (2025)
Faculty Researcher
Research Areas
Biomedical Subjects
Biography and Research Information
OverviewAI-generated summary
Shui-Qing Yu is a professor at the University of Arkansas at Fayetteville whose research focuses on semiconductor materials and devices, particularly germanium-tin (GeSn) alloys for mid-infrared (MIR) applications. His work investigates the fundamental properties of these materials, including dislocation generation, strain relief, and Sn outdiffusion during thermal annealing, as well as nanoscale mapping of short-range order.
Yu has received federal funding from the National Science Foundation (NSF) for his work on novel semiconductor approaches for infrared detection and for his involvement in the Center for High-Frequency Electronics and Circuits for Communication Systems (CHECCS). His research group actively explores GeSn alloys for their potential in developing advanced photodetectors and lasers operating in the mid-infrared spectrum, with publications detailing achievable performance limits and peak wavelengths up to 2.7 μm. He also has research interests in hydrogen-based combined heat and power systems and novel ventilation heat recovery technologies.
Yu's scholarship metrics indicate a significant research output, with an h-index of 37, over 340 publications, and more than 5,300 citations. He collaborates with several researchers at the University of Arkansas at Fayetteville, including Gregory J. Salamo, Wei Du, Hryhorii Stanchu, and Yuriy I. Mazur, with whom he shares numerous publications.
Metrics
- h-index: 37
- Publications: 339
- Citations: 5,415
Selected Publications
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Bias-Polarity-Controlled VIS–SWIR Dual-Mode Photodetection in a Grafted GaAs/MQW-GeSn/Ge Heterostructure (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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SiGeSn-on-insulator platform enabled by a novel layer-transfer process technology (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Identification of short-range ordering motifs in semiconductors (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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Design of Ge/GeSiSn Quantum Cascade Laser and Detector (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
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High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy (2024)
Federal Grants 2 $1,548,068 total
EAGER: IMPRESS-U: Novel Approach to New Semiconductor (Si)GeSn for Infrared Detection
Collaboration Network
Top Collaborators
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 25 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 23 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Advances in GeSn alloys for MIR applications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 23 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 20 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
Showing 5 of 15 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 13 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors
- “GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 12 shared publications
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Silicon-based electrically injected GeSn lasers
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 12 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 11 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
Showing 5 of 10 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors
- 3D Nanoscale Mapping of Short‐Range Order in GeSn Alloys
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Atomic short-range order in SiGeSn alloys
Showing 5 of 10 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 9 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Showing 5 of 9 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 8 shared publications
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 8 shared publications
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