S
Shui-Qing Yu Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Federal Grant PI
High Impact
Professor
faculty
37 h-index
338 pubs
5,198 cited
Research Areas
Biography and Research Information
OverviewAI-generated summary
Shui-Qing Yu's research focuses on semiconductor materials and devices, with a particular emphasis on Germanium-Tin (GeSn) alloys for mid-infrared (MIR) applications. His work investigates the fundamental properties and performance limits of these materials for use in photodetectors and lasers.
Yu's recent publications include studies on electrically injected GeSn lasers achieving peak wavelengths up to 2.7 μm, and the achievable performance of uncooled homojunction GeSn mid-infrared photodetectors. He also examines the correlation between dislocation generation, strain relief, and tin outdiffusion in thermally annealed GeSn epilayers, as well as nanoscale mapping of short-range order in these alloys. His research has contributed to understanding the performance limits of GeSn infrared photodiodes, notably through the "GeSn Rule-23."
His scholarly contributions are reflected in a high-impact designation, with 338 total publications, 5,132 total citations, and an h-index of 36. Yu has served as Co-PI on two NSF grants totaling over $1.5 million, including support for a novel approach to new semiconductor materials for infrared detection and the Center for High-Frequency Electronics and Circuits for Communication Systems. He leads a research group and collaborates with several colleagues at the University of Arkansas at Fayetteville, including Wei Du, Hryhorii Stanchu, Yuriy I. Mazur, and Solomon Ojo.
Metrics
- h-index: 37
- Publications: 338
- Citations: 5,198
Selected Publications
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Impedance spectroscopy and AC conductivity mechanism in GeSn thin films (2026)
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Identification of short-range ordering motifs in semiconductors (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Design of Ge/GeSiSn Quantum Cascade Laser and Detector (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
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High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy (2024)
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Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)
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Challenges for Room Temperature Electrically Injected GeSn Semiconductor Lasers (2024)
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Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024)
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Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy (2024)
Federal Grants 2 $1,548,068 total
NSF
Co-PI
Jul 2021 - Aug 2027
NSF
PI
Jun 2024 - May 2027
EAGER: IMPRESS-U: Novel Approach to New Semiconductor (Si)GeSn for Infrared Detection
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
26 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
Showing 5 of 26 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
21 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 21 shared publications
Wei Du
University of Arkansas at Fayetteville
20 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Advances in GeSn alloys for MIR applications
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
Showing 5 of 20 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
18 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 18 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
15 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
Showing 5 of 15 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
14 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
Showing 5 of 14 shared publications
Sudip Acharya
University of Arkansas at Fayetteville
13 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Silicon-based electrically injected GeSn lasers
Showing 5 of 13 shared publications
Sylvester Amoah
University of Arkansas at Fayetteville
11 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
Showing 5 of 11 shared publications
Baohua Li
11 shared publications
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 11 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville (US)
10 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE)
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
Showing 5 of 10 shared publications
Guo‐En Chang
National Chung Cheng University (TW)
10 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- “GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
Showing 5 of 10 shared publications
Grey Abernathy
10 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
Showing 5 of 10 shared publications
Jifeng Liu
9 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Atomic short-range order in SiGeSn alloys
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
Showing 5 of 9 shared publications
Abdulla Said
University of Arkansas at Fayetteville
9 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 9 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
8 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 8 shared publications
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