Shui-Qing Yu Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

High Impact

Professor

University of Arkansas at Fayetteville

faculty

36 h-index 338 pubs 5,080 cited

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Biography and Research Information

OverviewAI-generated summary

Shui-Qing Yu's research focuses on semiconductor materials and devices, particularly GeSn alloys and their applications in mid-infrared (MIR) detection and photonics. His work investigates the growth, performance limits, and quantitative correlations of dislocation generation, strain relief, and tin outdiffusion in thermally annealed GeSn epilayers. Yu has published research on electrically injected GeSn lasers with peak wavelengths up to 2.7 μm and the achievable performance of uncooled homojunction GeSn mid-infrared photodetectors.

His research also extends to SiGeSn quantum wells for integrated silicon photonics platforms. Yu has received federal funding from the National Science Foundation (NSF) for projects related to novel semiconductor materials for infrared detection. He has a substantial publication record, with over 338 publications and a citation count of 5,080, and maintains an active research group at the University of Arkansas at Fayetteville. His collaborators include Hryhorii Stanchu, Wei Du, Yuriy I. Mazur, and Solomon Ojo, all from the University of Arkansas at Fayetteville.

Metrics

  • h-index: 36
  • Publications: 338
  • Citations: 5,080

Selected Publications

  • Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
  • Design of Ge/GeSiSn Quantum Cascade Laser and Detector (2025) DOI
  • Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025) DOI
  • High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy (2024) DOI
  • Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024) DOI
  • Challenges for Room Temperature Electrically Injected GeSn Semiconductor Lasers (2024) DOI
  • Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024) DOI
  • Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy (2024) DOI
  • Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor (2024) DOI
  • Atomic short-range order in SiGeSn alloys (2024) DOI
  • Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications (2024) DOI
  • Exploring Short-Range Ordering in Semiconducting Materials (2024) DOI
  • GaAs/GeSn/Ge <i>n–i–p</i> diodes and light emitting diodes formed via grafting (2024) DOI
  • Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024) DOI
  • Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024) DOI

Federal Grants 3 $1,747,660 total

NSF Co-PI

IUCRC Phase I: University of Arkansas: Center for High-Frequency Electronics and Circuits for Communication Systems (CHECCS)

IUCRC-Indust-Univ Coop Res Ctr, Advanced Tech Education Prog $1,249,980
NSF Co-PI

EAGER: IMPRESS-U: Novel Approach to New Semiconductor (Si)GeSn for Infrared Detection

EPSCoR Co-Funding, International Research Collab, ELECTRONIC/PHOTONIC MATERIALS $298,088

Collaborators

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