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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-09
W
Wei Du
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Federal Grant PI
High Impact
Associate Professor
31 h-index
181 pubs
3,626 cited
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Wei Du's research focuses on the development and application of nanomaterials and advanced optical devices. He has received federal funding from the National Science Foundation for projects centered on semiconductor lasers and photonic materials. Specifically, one NSF award of $299,612 supports the development of semiconductor lasers and passive devices on a single sapphire platform for integrated microwave photonics, with Du serving as PI. Another NSF award, totaling $271,852, funds collaborative research on SiGeSn-based heterostructures for intersubband photonic materials, also with Du as PI.
His scholarly work includes publications on topics such as the peroxidase-like activity of Fe3O4 nanozymes, electrically injected GeSn lasers, and ultraviolet graphene absorption engineered by plasmon resonance. Recent publications also explore temperature-tunable metamaterial biosensors and optimization methods for ship weather routing. Du's research network includes frequent collaborators from the University of Arkansas at Fayetteville, such as Shui-Qing Yu, Hryhorii Stanchu, Gregory J. Salamo, and Nirosh M. Eldose, with whom he has co-authored numerous publications.
With an h-index of 31 and over 181 publications, Du is recognized as a highly cited researcher. His work spans areas including nanotechnology, semiconductor devices, and optical engineering, contributing to advancements in sensing technologies and integrated photonics.
Metrics
- h-index: 31
- Publications: 181
- Citations: 3,626
Selected Publications
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Midinfrared p-i-n GeSn Waveguide Photodetectors for 3-μm Band Silicon Photonics (2025)
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High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
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Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array (2025)
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Study of group III-V waveguides on sapphire platform for photonic integrated circuits (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
Federal Grants 2 $571,464 total
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
71 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 71 shared publications
Greg Sun
University of Massachusetts Boston (US)
42 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
Showing 5 of 42 shared publications
Richard Soref
University of Massachusetts Boston (US)
41 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
Showing 5 of 41 shared publications
Joe Margetis
Arizona Research Center (US)
38 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 38 shared publications
Seyed Amir Ghetmiri
University of Arkansas at Fayetteville
38 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 38 shared publications
Aboozar Mosleh
University of Arkansas at Fayetteville
38 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 38 shared publications
John Tolle
ASM International (US)
37 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Showing 5 of 37 shared publications
Hameed A. Naseem
University of Arkansas at Fayetteville
34 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Showing 5 of 34 shared publications
Baohua Li
University of Arkansas at Fayetteville
30 shared publications
In database
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
Showing 5 of 30 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
21 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
Showing 5 of 21 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
20 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
Showing 5 of 20 shared publications
Sattar Al-Kabi
University of Arkansas at Fayetteville
18 shared publications
In database
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Showing 5 of 18 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
17 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 17 shared publications
Wei Dou
Dartmouth College (US)
16 shared publications
- An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
- Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
- Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
- Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Showing 5 of 16 shared publications
Benjamin R. Conley
University of Arkansas at Fayetteville (US)
14 shared publications
- Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
- Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff
- Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
- Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx
Showing 5 of 14 shared publications
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