Baohua Li
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Formerly Arkansas Affiliated with University of Arkansas through 2019; recent publications list Tsinghua Shenzhen International Graduate School, Tsinghua University.
Upstream record may be merged OpenAlex, the source of these figures, lists 75 institutions in 9 countries for this author record — a pattern that usually means it combines several researchers with similar names. The totals above may include work by other people.
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Baohua Li's research focuses on the development of advanced energy storage devices, particularly rechargeable batteries and supercapacitors. His work has explored various chemistries, including lithium-ion, zinc-ion, and lithium-sulfur systems, aiming to improve safety, energy density, and longevity. Recent publications highlight efforts in creating safe and wearable solid-state zinc-ion batteries, high-rate zinc-ion hybrid supercapacitors, and dendrite-free lithium metal batteries utilizing novel polymer electrolytes and hierarchical structures.
Li's research group also investigates materials for energy storage, such as graphene-derived carbons for supercapacitors. His work has been recognized with a high h-index of 55, over 237 publications, and more than 12,000 citations, indicating a significant impact in the field. He has established collaborations with several colleagues at the University of Arkansas at Fayetteville, including Shui-Qing Yu, Wei Du, Solomon Ojo, and Joshua M. Grant, with whom he has co-authored multiple publications.
Prior to his current work, Li's research interests included environmental science, with a focus on water pollutants and their effects on aquatic life, as indicated by his MeSH terms. This background may inform his current research by considering the environmental implications and sustainability of energy storage technologies.
Metrics
- h-index: 55
- Publications: 237
- Citations: 12,229
Selected Publications
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Investigation of GeSn aspect ratio trapping growth up to 8% Sn (2026)arXiv (Cornell University) OpenAlex
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Investigation of GeSn aspect ratio trapping growth up to 8% Sn (2026)
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)arXiv (Cornell University) OpenAlex
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)
Collaboration Network
Top Collaborators
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
- Investigation of GeSn aspect ratio trapping growth up to 8% Sn
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
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