Amol Deshpande Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Hardware Development Engineer

University of Arkansas at Fayetteville

faculty

15 h-index 34 pubs 736 cited

Research Areas

Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Power Electronics High Voltage Engineering

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ORCID

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OverviewAI-generated summary

Amol Deshpande's research focuses on the development of high power-density power modules, particularly those utilizing silicon carbide (SiC) and silicon (Si) technologies. His work has involved the design and characterization of medium- and high-voltage power modules for applications such as traction inverters. Deshpande has investigated hybrid power module configurations, combining Si-IGBT and SiC-MOSFET switches to achieve improved performance characteristics, including high efficiency and power density.

During his graduate studies at the University of Arkansas, supported by the NSF Engineering Research Center for Power Optimization of Electro-thermal Systems (POETS), Deshpande's research included SiC building blocks, traction inverters, and power modules. His current role as a Hardware Development Engineer involves research and development of medium- and high-voltage power modules. He has co-authored over 30 publications and received a Best Paper Award at the 2016 IEEE Energy Conversion Congress and Exposition (ECCE). His scholarship metrics include an h-index of 15, with 34 total publications and 736 total citations.

Metrics

  • h-index: 15
  • Publications: 34
  • Citations: 736

Selected Publications

  • Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module (2025) DOI
  • Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module (2022) DOI
  • A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications (2021) DOI
  • A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC (2021) DOI
  • 1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding (2021) DOI

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