Amol Deshpande Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Hardware Development Engineer
faculty
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Amol Deshpande's research focuses on the development of power modules utilizing wide-bandgap semiconductor technologies, particularly silicon carbide (SiC) and silicon-carbide/silicon (SiC/Si) hybrid devices. His work involves the design and fabrication of high power-density modules for applications such as traction inverters. Deshpande has investigated advanced packaging methods to enhance the performance and reliability of these modules, including low-inductance configurations and improved thermal management.
During his graduate studies at the University of Arkansas, supported by the NSF Engineering Research Center for Power Optimization of Electro-thermal Systems (POETS), Deshpande's research included high power-density SiC building blocks, traction inverters, and power modules. He has published extensively on these topics, with his work contributing to the advancement of medium- and high-voltage power electronics. His professional experience includes internships at Texas Instruments and his current role as a Hardware Development Engineer at Wolfspeed, Inc., where he continues to focus on research and development in power module technology.
Deshpande has authored or co-authored over 30 journal articles and conference papers. His research has been recognized with awards, including a Best Paper Award at the 2016 IEEE Energy Conversion Congress and Exposition (ECCE). His scholarly output includes a h-index of 15 and over 700 citations.
Metrics
- h-index: 15
- Publications: 34
- Citations: 751
Selected Publications
-
Co-Design Framework for High Power, Medium-/High-Voltage WBG Power Modules: Case Study With 3.3-kV/200-A Wire-Bonded Low-Inductance SiC Half-Bridge Module (2025)
-
Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module (2022)
-
A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications (2021)
-
A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC (2021)
-
1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding (2021)
Collaboration Network
Top Collaborators
- 1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding
- Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module
- A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC
- A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
- Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module
- 1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding
- Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module
- A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC
- A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
- 1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding
- Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module
- A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC
- A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
- 1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding
- A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC
- A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
- Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module
- 1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding
- Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module
- A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC
- A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
- Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module
- A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC
- A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC
- A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
- A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC
- A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
- A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
- Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module
- Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module
- Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module
- Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module
- Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module
Similar Researchers
Based on overlapping research topics