Yuyang Wang
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Assistant
Also affiliated: Guizhou University (2021); University of Warwick (2025); Guizhou Minzu University (2021); Changchun Institute of Technology (2022); Institute of Semiconductors (2025); Qingdao University of Technology (2023); The University of Texas at Austin (2016); Shanghai Maritime University (2024); Nanjing University of Aeronautics and Astronautics (2024); Tsinghua University (2017)
Faculty Researcher
Research Areas
Biomedical Subjects
Links
Biography and Research Information
OverviewAI-generated summary
Yuyang Wang's research program investigates the intersection of materials science, energy systems, and environmental economics. Wang has published work on the fabrication and performance of silicon carbide (SiC) MOSFET power modules, relevant to electric vehicle inverters and advanced power electronics. Their research also explores economic and environmental decision-making, including optimal pricing strategies and carbon emission reduction in closed-loop supply chains under cap-and-trade regulations and government subsidies. Additionally, Wang's scholarly pursuits include analyzing governmental policies and their impact on industries such as shipping, through methods like evolutionary game theory. Wang has contributed to 19 publications and has an h-index of 5, with 86 total citations.
Metrics
- h-index: 5
- Publications: 20
- Citations: 91
Selected Publications
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Automated Near-Field EMI Scanning System Using Robotic Arm for Wide-Bandgap-Based Power Converters (2026)
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Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules (2025)
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Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices (2024)
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A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters (2024)
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Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module (2023)
Collaboration Network
Top Collaborators
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module
- Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
- Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules
- Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules
- Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules
- Fabrication Process Refinement Enabling High-Performance DSC 1.2 kV SiC Power Modules
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