Biography and Research Information
OverviewAI-generated summary
Rayna Alizadeh's research focuses on the design and development of advanced power electronic modules, particularly those utilizing wide-bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN). Her work investigates architectural design, system compatibility, and the impact of module design on overall power electronics system performance. Alizadeh has published on integrated gate drivers, double-sided cooling techniques, and the realization of reconfigurable power electronic modules (RPEM). Her recent publications include studies on a novel integrated 1.2 kV double-sided cooled power module and a 650V full-bridge GaN module with integrated gate driver and decoupling capacitors. She has also worked on compact, 100V, 360A full-bridge GaN power modules. Alizadeh collaborates with researchers at the University of Arkansas at Fayetteville, including H. Alan Mantooth, Yuyang Wang, and Yuxiang Chen. Her scholarship metrics include an h-index of 3, with 6 total publications and 75 total citations.
Metrics
- h-index: 3
- Publications: 6
- Citations: 79
Selected Publications
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A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters (2024)
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A Novel Integrated 1.2 kV Double-sided Cooled Power Module (2023)
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RPEM: Design and Realization of Reconfigurable Power Electronic Modules (2021)
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A Review of Architectural Design and System Compatibility of Power Modules and Their Impacts on Power Electronics Systems (2021)
Collaboration Network
Top Collaborators
- A Review of Architectural Design and System Compatibility of Power Modules and Their Impacts on Power Electronics Systems
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- A Novel Integrated 1.2 kV Double-sided Cooled Power Module
- RPEM: Design and Realization of Reconfigurable Power Electronic Modules
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- A Novel Integrated 1.2 kV Double-sided Cooled Power Module
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- A Novel Integrated 1.2 kV Double-sided Cooled Power Module
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- A Novel Integrated 1.2 kV Double-sided Cooled Power Module
- Design of a 650V Full-Bridge GaN Module with Integrated Gate Driver and Decoupling Capacitors
- A Compact, 100V, 360A Full-Bridge GaN Power Module with Integrated Gate Driver Board
- A Novel Integrated 1.2 kV Double-sided Cooled Power Module
- A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
- A Compact, 100V, 360A Full-Bridge GaN Power Module with Integrated Gate Driver Board
- A Compact, 100V, 360A Full-Bridge GaN Power Module with Integrated Gate Driver Board
- A Compact, 100V, 360A Full-Bridge GaN Power Module with Integrated Gate Driver Board
- A Compact, 100V, 360A Full-Bridge GaN Power Module with Integrated Gate Driver Board
- A Compact, 100V, 360A Full-Bridge GaN Power Module with Integrated Gate Driver Board
- A Compact, 100V, 360A Full-Bridge GaN Power Module with Integrated Gate Driver Board
- Design of a 650V Full-Bridge GaN Module with Integrated Gate Driver and Decoupling Capacitors
- Design of a 650V Full-Bridge GaN Module with Integrated Gate Driver and Decoupling Capacitors
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