Shiva Davari

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Grad. Student

University of Arkansas

Also affiliated: U.S. National Science Foundation (2026)

3 h-index 10 pubs 50 cited

Research Areas

Links

ORCID Research Group

OverviewAI-generated summary

Shiva Davari's research focuses on the study and fabrication of semiconductor materials and devices, particularly within the realm of two-dimensional (2D) materials and quantum phenomena. Davari has investigated quantum dots in monolayer and bilayer WSe2, and explored strain engineering in trigonal Te for topological quantum phases. Their work includes studying the effects of biaxial strain on excitons in monolayer MoSe2 and examining phase decoherence in GeSn through measurements of the weak antilocalization effect. Davari has also contributed to the simulation and comparison of luminescence properties in GaN/InGaN/GaN graded structures and has worked on voltage-tunable Josephson junctions on germanium quantum wells with in situ aluminum contacts. Their recent publications also highlight advances in the automated robotic preparation of 2D materials and the fabrication of 2D heterostructures. Davari has collaborated with researchers including Hugh Churchill and Yuriy I. Mazur at the University of Arkansas at Fayetteville.

Metrics

h-index: 3
Publications: 10
Citations: 50

Positions

Grad. Student publications 2019–2026

University of Arkansas Physics Department ORCID

Selected Publications

Voltage-tunable Josephson junctions on germanium quantum wells with in situ aluminum contacts (2026)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena DOI OpenAlex
Advances and opportunities for automated robotic preparation of 2D materials and fabrication of 2D heterostructures (2026)

2D Materials DOI OpenAlex
Voltage-tunable Josephson Junctions on Germanium Quantum Wells with in-situ Aluminum Contacts (2026)

arXiv (Cornell University) OpenAlex
Biaxial strain tuning of excitons in monolayer MoSe 2 by high-temperature physical vapor deposition (2024)

Physical review. B./Physical review. B 4 citations DOI OpenAlex
Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect (2024)

Journal of Applied Physics 2 citations DOI OpenAlex
Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021)

Journal of Luminescence 2 citations DOI OpenAlex
Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer W Se 2 (2020)

Physical Review Applied 33 citations DOI OpenAlex
Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals (2019)

arXiv (Cornell University) DOI OpenAlex
Growth and Strain Engineering of Trigonal Te for Topological Quantum Phases in Non-Symmorphic Chiral Crystals (2019)

Crystals 8 citations DOI OpenAlex