S
Shiva Davari Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Grad. Student
unknown
2 h-index
8 pubs
45 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Shiva Davari is a graduate student at the University of Arkansas at Fayetteville whose research centers on the study of semiconductor materials and their properties. Davari has investigated the phase decoherence in GeSn (8%) by measuring the weak antilocalization effect and explored the luminescence properties of GaN/InGaN/GaN double graded structures through a combination of experimental and simulation methods. Additionally, Davari's work includes the study of biaxial strain tuning of excitons in monolayer MoSe$_2$ using high-temperature physical vapor deposition. Davari has collaborated with researchers including Hugh Churchill, Yuriy I. Mazur, Reem Alhelais, and Morgan E. Ware, all from the University of Arkansas at Fayetteville, contributing to a total of eight publications. Davari's scholarly output includes an h-index of 2 and has garnered 43 citations.
Metrics
- h-index: 2
- Publications: 8
- Citations: 45
Selected Publications
-
Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition (2024)
-
Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect (2024)
-
Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021)
Collaboration Network
Top Collaborators
Hugh Churchill
University of Arkansas at Fayetteville
3 shared publications
In database
- Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
- Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
T. Faltermeier
Montana State University (US)
2 shared publications
- Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
Nicholas J. Borys
Montana State University (US)
2 shared publications
- Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
Mirsaeid Sarollahi
University of Arkansas at Fayetteville (US)
1 shared publication
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Pijush K. Ghosh
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Manal A. Aldawsari
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Malak I. Refaei
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Reem Alhelais
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Yuriy I. Mazur
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Morgan E. Ware
University of Arkansas at Fayetteville
1 shared publication
In database
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Sahil Patel
1 shared publication
- Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
Surendra K. Puri
1 shared publication
- Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
Rafael Rodríguez
1 shared publication
- Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
Kelly A. Reynolds
1 shared publication
- Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
Hatsuo Nakamura
1 shared publication
- Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition
Similar Researchers
Based on overlapping research topics
Bria Collier
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Materials Science Research
S.-Q. Yu
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Materials Science Research
Nirosh M. Eldose
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Materials Science Research
Emanuel M. Sachs
Harding University Main Campus
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Materials Science Research
Kristofor. R. Brye
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Materials Science Research
S. Menhart
University of Arkansas at Little Rock
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Materials Science Research