K. Reynolds Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
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Biography and Research Information
OverviewAI-generated summary
K. Reynolds, a faculty member at the University of Arkansas at Fayetteville, has published 12 papers with 109 citations and an h-index of 4. Their recent work includes a 2024 publication on the biaxial strain tuning of excitons in monolayer MoSe2. Reynolds collaborates with Shiva Davari, Hugh Churchill, S. Puri, and Chris McPherson, all from the University of Arkansas at Fayetteville, with whom they have co-authored one publication each. Reynolds is recently active in research.
Metrics
- h-index: 4
- Publications: 12
- Citations: 110
Selected Publications
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Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition (2024)
Collaboration Network
Top Collaborators
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
- Biaxial strain tuning of excitons in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> by high-temperature physical vapor deposition
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