Pargam Vashishtha Source Confirmed

OverviewAI-generated summary

Pargam Vashishtha's research focuses on the fabrication and characterization of novel photodetector devices, particularly heterostructures based on semiconductor materials. Their work investigates the self-powered and broadband capabilities of these devices, exploring their potential for optical signal detection in various environments. Vashishtha has published research on GaN nano-towers for UV photodetectors, and heterostructures involving MoS₂ and GaN for self-powered, bidirectional photodetection across an extended spectrum.

Further investigations by Vashishtha include the development of UVC–NIR broadband photodetectors with high-temperature reliability using MoS₂/GaN heterostructures. Their publications also detail multiband spectral response photodetectors based on Sb₂Se₃/GaN heterojunctions, and self-powered broadband photodetectors utilizing MoS₂/Sb₂Se₃ heterostructures. Vashishtha has also studied GaN-based pyramidal structures for UV photodetectors suitable for optical signal detection in rugged conditions, as well as self-driven, thermally resilient MoS₂-based photodetectors for near-infrared signals.

With a career marked by significant scholarly output, Vashishtha has accumulated 90 publications and 1,838 citations, achieving an h-index of 26. They are recognized as a highly cited researcher, indicating a substantial impact within their field. Vashishtha remains an active researcher, with their most recent publication in 2025.

Metrics

• h-index: 26
• Publications: 90
• Citations: 1,838