Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
S
Sudip Acharya
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Research Assistant
Also affiliated: Tribhuvan University (2021)
Graduate Student Researcher
6 h-index
36 pubs
116 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Sudip Acharya's research focuses on the development and characterization of semiconductor materials for optoelectronic applications, particularly within silicon photonics platforms. His work investigates Germanium-Tin (GeSn) quantum wells and lasers, exploring their potential for integrated photonic circuits. Recent publications detail the electrical injection of GeSn lasers operating at cryogenic temperatures and the growth of Ge and GeSn layers on GaAs substrates using molecular beam epitaxy. Acharya has also examined the influence of dislocations on tin diffusion in GeSn layers and the band alignment of AlGaAs/GeSn heterojunctions using X-ray photoelectron spectroscopy.
His research network includes key collaborators at the University of Arkansas at Fayetteville, such as Hryhorii Stanchu, Shui-Qing Yu, Solomon Ojo, and Wei Du, with whom he has co-authored numerous publications. Acharya's scholarly contributions are reflected in his h-index of 6 and over 100 citations across his 33 publications.
Metrics
- h-index: 6
- Publications: 36
- Citations: 116
Selected Publications
-
Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
-
Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
-
High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
-
Demonstration of AlGaAs/GeSn p-i-n diodes (2025)
-
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
-
<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
-
Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
-
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)
-
Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor (2024)
-
Electrically Injected GeSn Laser Operating up to 135 K (2024)
-
Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
-
Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
-
The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy (2024)
-
Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
-
Single crystal growth and characterization of topological semimetal ZrSnTe (2023)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
16 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Silicon-based electrically injected GeSn lasers
Showing 5 of 16 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
12 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Showing 5 of 12 shared publications
Wei Du
University of Arkansas at Fayetteville
9 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Showing 5 of 9 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
7 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Silicon-based electrically injected GeSn lasers
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Showing 5 of 7 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
7 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 7 shared publications
Sylvester Amoah
University of Arkansas at Fayetteville
6 shared publications
In database
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Silicon-based electrically injected GeSn lasers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Electrically Injected GeSn Laser Operating up to 135 K
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Showing 5 of 6 shared publications
Abdulla Said
University of Arkansas at Fayetteville
6 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
Showing 5 of 6 shared publications
Guo‐En Chang
National Chung Cheng University (TW)
5 shared publications
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Baohua Li
5 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Joshua M. Grant
University of Arkansas at Fayetteville
4 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
4 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Yuriy I. Mazur
University of Arkansas at Fayetteville
4 shared publications
In database
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Yue‐Tong Jheng
National Chung Cheng University (TW)
3 shared publications
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
3 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Emmanuel Wangila
University of Arkansas at Fayetteville
3 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Similar Researchers
Based on overlapping research topics
Nirosh M. Eldose
University of Arkansas at Fayetteville
Semiconductor materials and devices
Photonic and Optical Devices
Advancements in Semiconductor Devices and Circuit Design
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
Semiconductor materials and devices
Photonic and Optical Devices
Advancements in Semiconductor Devices and Circuit Design
Sylvester Amoah
University of Arkansas at Fayetteville
Semiconductor materials and devices
Photonic and Optical Devices
Advancements in Semiconductor Devices and Circuit Design
Ali I. Hammoodi
University of Arkansas at Little Rock
Semiconductor materials and devices
Photonic and Optical Devices
Advancements in Semiconductor Devices and Circuit Design
Hryhorii Stanchu
University of Arkansas at Fayetteville
Semiconductor materials and devices
Photonic and Optical Devices
Advancements in Semiconductor Devices and Circuit Design
J. A. Bass
University of Arkansas at Fayetteville
Semiconductor materials and devices
Photonic and Optical Devices
Advancements in Semiconductor Devices and Circuit Design