Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
S
Sudip Acharya
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Research Assistant
Also affiliated: University of Wisconsin–Madison (2024)
6 h-index
35 pubs
114 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Sudip Acharya's research focuses on the development and characterization of germanium-tin (GeSn) based semiconductor materials for optoelectronic applications, particularly within silicon photonics platforms. His work investigates the fundamental properties of GeSn quantum wells and their integration into devices such as electrically injected mid-infrared lasers. Acharya has explored methods to enhance carrier collection efficiency in these materials, aiming for all-group-IV photonics. His publications also address the growth of Ge and GeSn on different substrates, including GaAs, and the role of dislocations on tin diffusion during annealing processes. He has also examined heterojunction band alignment through X-ray photoelectron spectroscopy. Acharya has a notable collaboration network at the University of Arkansas at Fayetteville, with shared publications involving Hryhorii Stanchu, Shui-Qing Yu, Solomon Ojo, and Wei Du.
Metrics
- h-index: 6
- Publications: 35
- Citations: 114
Positions
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Graduate Research Assistant 2020–presentUniversity of Arkansas at Fayetteville Material Science and Engineering ORCID
Selected Publications
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Dual-barrier GeSn quantum-well lasers with operation up to 150 K (2026)
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)arXiv (Cornell University) OpenAlex
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
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High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
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Demonstration of AlGaAs/GeSn p-i-n diodes (2025)
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
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In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
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Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)
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Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor (2024)
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Electrically Injected GeSn Laser Operating up to 135 K (2024)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
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The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy (2024)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
17 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Silicon-based electrically injected GeSn lasers
Showing 5 of 17 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
13 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Showing 5 of 13 shared publications
Wei Du
University of Arkansas at Fayetteville
10 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
Showing 5 of 10 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
7 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Silicon-based electrically injected GeSn lasers
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Showing 5 of 7 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
7 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 7 shared publications
Sylvester Amoah
University of Arkansas at Fayetteville
6 shared publications
In database
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Silicon-based electrically injected GeSn lasers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Electrically Injected GeSn Laser Operating up to 135 K
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Showing 5 of 6 shared publications
Abdulla Said
University of Arkansas at Fayetteville
6 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
Showing 5 of 6 shared publications
Guo‐En Chang
National Chung Cheng University (TW)
5 shared publications
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Baohua Li
5 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Joshua M. Grant
University of Arkansas at Fayetteville
5 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
- Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
4 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Yuriy I. Mazur
University of Arkansas at Fayetteville
4 shared publications
In database
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Yue‐Tong Jheng
National Chung Cheng University (TW)
3 shared publications
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
3 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
Emmanuel Wangila
University of Arkansas at Fayetteville
3 shared publications
In database
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits
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