S
Sudip Acharya Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Research Assistant
grad_student
6 h-index
33 pubs
100 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Sudip Acharya's research focuses on the development and characterization of germanium-tin (GeSn) semiconductor materials for photonic applications, particularly within integrated circuits on silicon platforms. His work investigates the growth mechanisms and material properties of GeSn alloys, including their potential for creating electrically injected lasers operating at cryogenic temperatures. Acharya has explored the role of dislocations in Sn diffusion during annealing processes and examined methods for enhancing carrier collection efficiency in GeSn single quantum wells to advance all-group-IV photonics. His publications also cover the growth of Ge and GeSn on gallium arsenide (GaAs) substrates and the material study of germanium grown by aspect ratio trapping on silicon substrates. Acharya collaborates with researchers at the University of Arkansas at Fayetteville, including Hryhorii Stanchu, Shui-Qing Yu, Wei Du, and Solomon Ojo, with whom he has co-authored multiple publications.
Metrics
- h-index: 6
- Publications: 33
- Citations: 100
Selected Publications
-
Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
-
Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
-
High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
-
Demonstration of AlGaAs/GeSn p-i-n diodes (2025)
-
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
-
<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
-
Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
-
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)
-
Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor (2024)
-
Electrically Injected GeSn Laser Operating up to 135 K (2024)
-
Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
-
Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate (2024)
-
The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024)
-
Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023)
-
Single crystal growth and characterization of topological semimetal ZrSnTe (2023)
Collaboration Network
Top Collaborators
Shui-Qing Yu
24 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Silicon-based electrically injected GeSn lasers
Showing 5 of 24 shared publications
Hryhorii Stanchu
18 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 18 shared publications
Wei Du
12 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 12 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
11 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Silicon-based electrically injected GeSn lasers
Showing 5 of 11 shared publications
Gregory J. Salamo
10 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 10 shared publications
Sylvester Amoah
9 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Silicon-based electrically injected GeSn lasers
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Depth-Dependent Photoluminescence Characteristic of Gesn/Sigesn Multi-Quantum Wells
Showing 5 of 9 shared publications
Abdulla Said
University of Arkansas at Fayetteville
8 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Showing 5 of 8 shared publications
Jiarui Gong
8 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 8 shared publications
Samuel Haessly
University of Wisconsin–Madison (US)
8 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 8 shared publications
Zhenqiang Ma
University of Wisconsin–Madison (US)
8 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 8 shared publications
Guo‐En Chang
National Chung Cheng University (TW)
7 shared publications
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]
Showing 5 of 7 shared publications
Alireza Abrand
Rochester Institute of Technology (US)
7 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 7 shared publications
Daniel Vincent
University of Wisconsin–Madison (US)
7 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 7 shared publications
Parsian K. Mohseni
Rochester Institute of Technology (US)
7 shared publications
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Showing 5 of 7 shared publications
Justin Rudie
7 shared publications
In database
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- Characterization of Algaas/Gesn Heterojunction Band Alignment Via X-Ray Photoelectron Spectroscopy
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Showing 5 of 7 shared publications
Similar Researchers
Based on overlapping research topics
Huong Tran
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Photonic and Optical Devices
Hryhorii Stanchu
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Photonic and Optical Devices
Solomon Ojo
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Photonic and Optical Devices
Zachary P. Uttley
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Photonic and Optical Devices
Joshua M. Grant
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Photonic and Optical Devices
Justin Rudie
University of Arkansas at Fayetteville
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Photonic and Optical Devices