Research Areas
Biography and Research Information
OverviewAI-generated summary
Nicolaus Vail's research focuses on semiconductor materials and devices, specifically investigating methods for extracting threshold voltage in low-voltage Silicon Carbide (SiC) MOSFETs under high-temperature conditions. This work contributes to the understanding and development of advanced electronic components capable of operating reliably in demanding thermal environments. Vail has published one article in this area, which has garnered one citation. His academic collaborations include shared publications with Abu Shahir Md Khalid Hasan, Md Maksudul Hossain, and John Venker, all affiliated with the University of Arkansas at Fayetteville. Vail's scholarly output indicates recent activity and engagement in the field.
Metrics
- h-index: 1
- Publications: 1
- Citations: 1
Selected Publications
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Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature (2023)
Collaboration Network
Top Collaborators
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
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