A
Abu Shahir Md Khalid Hasan Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Research Assistant
grad_student
4 h-index
22 pubs
90 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Abu Shahir Md Khalid Hasan is a Graduate Research Assistant at the University of Arkansas at Fayetteville. His research focuses on semiconductor materials and devices, particularly silicon carbide (SiC) and gallium nitride (GaN) technologies for power electronics. Hasan has investigated advanced modeling techniques for SiC power MOSFETs, including physics-based Simscape models with temperature-scaling capabilities. His work also extends to the characterization of wide-bandgap semiconductors like gallium oxide (Ga2O3) and GaN High Electron Mobility Transistors (HEMTs) under various conditions, including deep cryogenic temperatures (4K). He has explored the design of low-inductance power modules using SiC and GaN, aiming to improve performance and reliability in harsh environments. Hasan has co-authored publications with several researchers at the University of Arkansas at Fayetteville, including Md Maksudul Hossain and Mohammad Dehan Rahman.
Metrics
- h-index: 4
- Publications: 22
- Citations: 90
Selected Publications
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026)
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SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025)
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Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025)
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Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025)
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Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET (2025)
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Compact Model for a Ferroelectric Capacitor Compatible with Integrated Circuit Design in Harsh Environment (2025)
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Breakdown and C-V Characteristics Analysis of Depletion Mode Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFET (2025)
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Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025)
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Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module (2025)
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A 0.8 V Bandgap Voltage Reference with High PSRR for Low-Dropout Voltage Regulator in 22nm FD-SOI (2024)
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High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor (2024)
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Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design (2024)
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Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range (2024)
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Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region (2024)
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A review of silicon carbide CMOS technology for harsh environments (2024)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
15 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- 3.3 kV Low-Inductance Full SiC Power Module
- A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling
- Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
- Deep Cryogenic Characterization of GaN HEMT at 4K
Showing 5 of 15 shared publications
Md Maksudul Hossain
University of Arkansas at Fayetteville
8 shared publications
In database
- A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling
- Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
- Deep Cryogenic Characterization of GaN HEMT at 4K
- Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
Showing 5 of 8 shared publications
Mohammad Dehan Rahman
University of Arkansas at Fayetteville
7 shared publications
In database
- High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Showing 5 of 7 shared publications
Md. Moinul Islam
University of Arkansas at Fayetteville (US)
5 shared publications
- Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Breakdown and C-V Characteristics Analysis of Depletion Mode Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFET
- Compact Model for a Ferroelectric Capacitor Compatible with Integrated Circuit Design in Harsh Environment
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
Xiaoqing Song
University of Arkansas at Fayetteville
5 shared publications
In database
- High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Zhuowen Feng
University of Arkansas at Fayetteville
3 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Tanzila Akter
University of Arkansas at Fayetteville
3 shared publications
In database
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Yuxiang Chen
University of Arkansas at Fayetteville
2 shared publications
In database
- 3.3 kV Low-Inductance Full SiC Power Module
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Xinyuan Du
University of Arkansas at Fayetteville
2 shared publications
In database
- 3.3 kV Low-Inductance Full SiC Power Module
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
Xiaoling Li
University of Arkansas at Fayetteville (US)
2 shared publications
- 3.3 kV Low-Inductance Full SiC Power Module
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
Yue Zhao
University of Arkansas at Fayetteville
2 shared publications
In database
- 3.3 kV Low-Inductance Full SiC Power Module
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
Md. Zahidul Islam
University of Arkansas at Fayetteville (US)
2 shared publications
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
- A 0.8 V Bandgap Voltage Reference with High PSRR for Low-Dropout Voltage Regulator in 22nm FD-SOI
John Venker
University of Arkansas at Fayetteville
2 shared publications
In database
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
- A 0.8 V Bandgap Voltage Reference with High PSRR for Low-Dropout Voltage Regulator in 22nm FD-SOI
Pengyu Lai
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Md Zahidul Islam
University of Arkansas at Fayetteville (US)
2 shared publications
- A review of silicon carbide CMOS technology for harsh environments
- Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design
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