Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
A
Abu Shahir Md Khalid Hasan
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Research Assistant
Also affiliated: Louisiana State University Agricultural Center (2021)
Graduate Student Researcher
6 h-index
24 pubs
111 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Abu Shahir Md Khalid Hasan's research focuses on semiconductor materials and devices, particularly silicon carbide (SiC) and gallium nitride (GaN) technologies for power electronics. His work includes developing and modeling SiC power MOSFETs for harsh environments, investigating their temperature-scaling properties, and creating compact models for SiC power modules. Hasan also explores the performance of gallium oxide (Ga2O3) MOSFETs, including their behavior under single event upsets at breakdown regions. His research extends to the deep cryogenic characterization of GaN HEMTs and the design of low-inductance GaN HEMT power modules. Hasan has authored or co-authored numerous publications in this field and collaborates with researchers at the University of Arkansas at Fayetteville, including Md Maksudul Hossain, Mohammad Dehan Rahman, Muhammad Nazrul Islam, and H. Alan Mantooth.
Metrics
- h-index: 6
- Publications: 24
- Citations: 111
Selected Publications
-
Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module (2026)
-
DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET (2026)
-
A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026)
-
SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025)
-
Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025)
-
Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025)
-
Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET (2025)
-
Compact Model for a Ferroelectric Capacitor Compatible with Integrated Circuit Design in Harsh Environment (2025)
-
Breakdown and C-V Characteristics Analysis of Depletion Mode Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFET (2025)
-
Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025)
-
Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module (2025)
-
A 0.8 V Bandgap Voltage Reference with High PSRR for Low-Dropout Voltage Regulator in 22nm FD-SOI (2024)
-
High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor (2024)
-
Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design (2024)
-
Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range (2024)
Collaboration Network
Top Collaborators
H. Alan Mantooth
University of Arkansas at Fayetteville
17 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- 3.3 kV Low-Inductance Full SiC Power Module
- A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling
- Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
- Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design
Showing 5 of 17 shared publications
Md Maksudul Hossain
University of Arkansas at Fayetteville
8 shared publications
In database
- A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling
- Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
- Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design
- Deep Cryogenic Characterization of GaN HEMT at 4K
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
Showing 5 of 8 shared publications
Mohammad Dehan Rahman
University of Arkansas at Fayetteville
8 shared publications
In database
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Showing 5 of 8 shared publications
Xiaoqing Song
University of Arkansas at Fayetteville
5 shared publications
In database
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Md. Moinul Islam
University of Arkansas at Fayetteville
5 shared publications
In database
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Breakdown and C-V Characteristics Analysis of Depletion Mode Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFET
- Compact Model for a Ferroelectric Capacitor Compatible with Integrated Circuit Design in Harsh Environment
- SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region
- DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET
Tanzila Akter
University of Arkansas at Fayetteville
3 shared publications
In database
- Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
- Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Yuxiang Chen
University of Arkansas at Fayetteville
2 shared publications
In database
- 3.3 kV Low-Inductance Full SiC Power Module
- Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module
Xinyuan Du
University of Arkansas at Fayetteville
2 shared publications
In database
- 3.3 kV Low-Inductance Full SiC Power Module
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
Xiaoling Li
University of Arkansas at Fayetteville
2 shared publications
In database
- 3.3 kV Low-Inductance Full SiC Power Module
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
Yue Zhao
University of Arkansas at Fayetteville
2 shared publications
In database
- 3.3 kV Low-Inductance Full SiC Power Module
- Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range
Md. Zahidul Islam
University of Arkansas at Fayetteville (US)
2 shared publications
- A 0.8 V Bandgap Voltage Reference with High PSRR for Low-Dropout Voltage Regulator in 22nm FD-SOI
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
John Venker
University of Arkansas at Fayetteville
2 shared publications
In database
- A 0.8 V Bandgap Voltage Reference with High PSRR for Low-Dropout Voltage Regulator in 22nm FD-SOI
- Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature
Pengyu Lai
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Zhuowen Feng
University of Arkansas at Fayetteville
2 shared publications
In database
- A review of silicon carbide CMOS technology for harsh environments
- A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability
Aireen Amir Jalal
University of Arkansas at Fayetteville
2 shared publications
In database
- Compact Model for a Ferroelectric Capacitor Compatible with Integrated Circuit Design in Harsh Environment
- Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET
Similar Researchers
Based on overlapping research topics
Roberto Quezada
University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design
Silicon Carbide Semiconductor Technologies
GaN-based semiconductor devices and materials
Dick Oliver
University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design
Silicon Carbide Semiconductor Technologies
GaN-based semiconductor devices and materials
Kevin Chen
University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design
Silicon Carbide Semiconductor Technologies
GaN-based semiconductor devices and materials
Mohammad Dehan Rahman
University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design
Silicon Carbide Semiconductor Technologies
GaN-based semiconductor devices and materials
K. Asif Faruque
University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Weihong Gong
University of Arkansas at Fayetteville
Advancements in Semiconductor Devices and Circuit Design
Silicon Carbide Semiconductor Technologies
GaN-based semiconductor devices and materials