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Current · Arkansas
Last published
2025
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OpenAlex · ORCID
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2026-10-06
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Solomon Ojo
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Also affiliated: Dartmouth College (2018); Wilkes University (2018–2022); University of Alabama (2018); University of Massachusetts Boston (2018)
11 h-index
39 pubs
697 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Solomon Ojo's research focuses on the development and characterization of germanium-tin (GeSn) based semiconductor materials for photonic applications, particularly integrated circuits on silicon platforms. His work has explored the creation of GeSn lasers, including electrically injected and optically pumped devices, with a specific emphasis on extending their operating wavelengths into the mid-infrared spectrum and improving their performance at higher temperatures. He has investigated growth techniques for pseudomorphic GeSn and low-temperature SiSn using plasma-enhanced chemical vapor deposition.
Ojo has contributed to multiple publications detailing advancements in GeSn quantum well structures for integrated photonics. His h-index is 11, with 39 total publications and 698 citations. He collaborates extensively with colleagues at the University of Arkansas at Fayetteville, including Shui-Qing Yu, Hryhorii Stanchu, Wei Du, and Sudip Acharya, with whom he shares numerous publications.
Metrics
- h-index: 11
- Publications: 39
- Citations: 697
Selected Publications
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Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
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Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition (2025)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023)
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Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022)
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Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022)
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Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022)
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Silicon-based electrically injected GeSn lasers (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
26 shared publications
In database
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
Showing 5 of 26 shared publications
Wei Du
University of Arkansas at Fayetteville
20 shared publications
In database
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
Showing 5 of 20 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
17 shared publications
In database
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 17 shared publications
Grey Abernathy
University of Arkansas at Fayetteville (US)
16 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 16 shared publications
Baohua Li
15 shared publications
In database
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 15 shared publications
Joe Margetis
ASM International (US)
12 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 12 shared publications
Huong Tran
University of Arkansas at Fayetteville (US)
12 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
Showing 5 of 12 shared publications
John Tolle
ASM International (US)
12 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 12 shared publications
Greg Sun
University of Massachusetts Boston (US)
11 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Electrically injected GeSn lasers on Si operating up to 100 K
Showing 5 of 11 shared publications
Richard Soref
University of Massachusetts Boston (US)
11 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Electrically injected GeSn lasers on Si operating up to 100 K
Showing 5 of 11 shared publications
Joshua M. Grant
University of Arkansas at Fayetteville
10 shared publications
In database
- Electrically injected GeSn lasers on Si operating up to 100 K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 10 shared publications
Sylvester Amoah
University of Arkansas at Fayetteville
9 shared publications
In database
- Electrically injected GeSn lasers on Si operating up to 100 K
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Showing 5 of 9 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
9 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
Showing 5 of 9 shared publications
Jifeng Liu
Dartmouth College (US)
8 shared publications
- Electrically injected GeSn lasers on Si operating up to 100 K
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Electrically injected GeSn lasers on Si operating up to 100 K
Showing 5 of 8 shared publications
Mansour Mortazavi
University of Arkansas at Pine Bluff
8 shared publications
In database
- Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
- All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
- Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers
- Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si
- Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si
Showing 5 of 8 shared publications
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