Match tier
Likely match
Presence
Current · Arkansas
Last published
2025
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
S
Solomon Ojo
This is a likely match — the affiliation was inferred from OpenAlex, ORCID, and web sources but has not been fully confirmed. Treat with appropriate caution.
Researcher
Also affiliated: Dartmouth College (2018); Wilkes University (2018–2022); University of Alabama (2018); University of Massachusetts Boston (2018)
Faculty Researcher
11 h-index
39 pubs
690 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Solomon Ojo's research focuses on the development and characterization of germanium-tin (GeSn) semiconductor materials for optoelectronic applications, particularly in the mid-infrared spectrum. His work has involved the growth of pseudomorphic GeSn layers with controlled tin compositions using molecular beam epitaxy, achieving significant Sn concentrations up to 16.7% at low pressures. Ojo has contributed to the advancement of electrically injected GeSn lasers on silicon platforms, with recent publications reporting peak wavelengths extending to 2.7 μm and operation at 140 K. His research also investigates GeSn/SiGeSn quantum wells for integrated photonics circuits and explores the optical and structural properties of these heterostructures. Ojo has a publication record of 39 papers with 611 citations and an h-index of 10. He has collaborated extensively with Shui-Qing Yu, Hryhorii Stanchu, Wei Du, and Sudip Acharya at the University of Arkansas at Fayetteville.
Metrics
- h-index: 11
- Publications: 39
- Citations: 690
Selected Publications
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Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
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Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition (2025)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy (2024)
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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023)
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Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023)
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Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)
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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation (2022)
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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022)
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Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications (2022)
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Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022)
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Silicon-based electrically injected GeSn lasers (2022)
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7% (2021)
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Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021)
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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
16 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 16 shared publications
Wei Du
University of Arkansas at Fayetteville
10 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
Showing 5 of 10 shared publications
Hryhorii Stanchu
University of Arkansas at Fayetteville
9 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
Showing 5 of 9 shared publications
Grey Abernathy
University of Arkansas at Fayetteville (US)
9 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 9 shared publications
Baohua Li
9 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 9 shared publications
Oluwatobi Olorunsola
University of Arkansas at Fayetteville
7 shared publications
In database
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Showing 5 of 7 shared publications
Yiyin Zhou
University of Arkansas at Fayetteville
7 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
Showing 5 of 7 shared publications
Joshua M. Grant
University of Arkansas at Fayetteville
7 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 7 shared publications
Abdulla Said
University of Arkansas at Fayetteville
6 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 6 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
6 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 6 shared publications
Sylvester Amoah
University of Arkansas at Fayetteville
6 shared publications
In database
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Silicon-based electrically injected GeSn lasers
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
Showing 5 of 6 shared publications
Sudip Acharya
University of Arkansas at Fayetteville
6 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Silicon-based electrically injected GeSn lasers
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Showing 5 of 6 shared publications
Guo‐En Chang
National Chung Cheng University (TW)
5 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Silicon-based electrically injected GeSn lasers
- Investigation of the cap layer for improved GeSn multiple quantum well laser performance
Joe Margetis
Arizona State University (US)
4 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically Injected GeSn Laser on Si Operating up to 110K
John Tolle
Arizona State University (US)
4 shared publications
- Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
- Electrically Injected GeSn Laser on Si Operating up to 110K
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