Justin Rudie Data-verified

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas

Last publication 2026 Last refreshed 2026-05-16

faculty

3 h-index 10 pubs 21 cited

Research Areas

Links

ORCID

OverviewAI-generated summary

Justin Rudie's research focuses on the development and characterization of semiconductor materials and devices, particularly for infrared detection applications. His work involves the creation of monolithic germanium-tin (GeSn) on silicon avalanche photodiodes, which are essential for sensing light in the short-wave infrared (SWIR) and extended SWIR spectrum. Rudie investigates the electronic properties and band alignment of various heterojunctions, including those involving β-(Al$_{0.21}$Ga$_{0.79}$)$_2$O$_3$/β-Ga$_2$O$_3$, AlGaAs/GeSn, and SiGeSn/GeSn quantum wells. His publications detail systematic studies on high-performance GeSn photodiodes with thick absorbers, aiming to achieve specific spectral response cutoffs, such as 2.14 micrometers. Rudie collaborates with researchers at the University of Arkansas at Fayetteville, including Sylvester Amoah, Sudip Acharya, Wei Du, and Perry C. Grant, contributing to a body of work in advanced semiconductor device physics.

Metrics

h-index: 3
Publications: 10
Citations: 21

Selected Publications

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)

DOI OpenAlex
Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)

DOI OpenAlex
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)

4 citations DOI OpenAlex
Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024)

7 citations DOI OpenAlex
Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction (2022)

9 citations DOI OpenAlex