Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-16
J
Justin Rudie
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
Faculty Researcher
3 h-index
10 pubs
21 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Justin Rudie's research focuses on the development and characterization of semiconductor materials and devices, with a particular emphasis on applications in infrared detection. His work investigates heterojunctions, including those involving β-Ga2O3, AlGaAs, and germanium tin (GeSn) alloys on silicon substrates. Rudie has published research on the electronic band alignment of these heterojunctions, utilizing techniques such as X-ray photoelectron spectroscopy and internal photoemission. His recent publications include studies on monolithic GeSn avalanche photodiodes designed for short-wave infrared (SWIR) and extended SWIR detection, with reported spectral response cutoffs at 2.14 micrometers. Rudie collaborates with several faculty members at the University of Arkansas at Fayetteville, including Sudip Acharya and Sylvester Amoah, on these research endeavors.
Metrics
- h-index: 3
- Publications: 10
- Citations: 21
Selected Publications
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection (2026)
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
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Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
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Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)
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Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024)
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Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction (2022)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
4 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Sylvester Amoah
University of Arkansas at Fayetteville
3 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Wei Du
University of Arkansas at Fayetteville
3 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Timothy A. Morgan
Naval Surface Warfare Center (US)
2 shared publications
- Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Xiaoxin Wang
Dartmouth College (US)
2 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Grey Abernathy
2 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Steven Akwabli
University of Arkansas at Fayetteville
2 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Perry C. Grant
2 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Jifeng Liu
Dartmouth College (US)
2 shared publications
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Baohua Li
2 shared publications
In database
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
Sudip Acharya
University of Arkansas at Fayetteville
2 shared publications
In database
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
1 shared publication
In database
- Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
Nazar Orishchin
Agnitron Technology (United States) (US)
1 shared publication
- Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
Fikadu Alema
Agnitron Technology (United States) (US)
1 shared publication
- Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
A. Osinsky
Agnitron Technology (United States) (US)
1 shared publication
- Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
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