Justin Rudie
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Academic Laboratory Assistant
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Justin Rudie's research focuses on the development and characterization of semiconductor materials and devices, with a particular emphasis on applications in infrared detection. His work investigates heterojunctions, including those involving β-Ga2O3, AlGaAs, and germanium tin (GeSn) alloys on silicon substrates. Rudie has published research on the electronic band alignment of these heterojunctions, utilizing techniques such as X-ray photoelectron spectroscopy and internal photoemission. His recent publications include studies on monolithic GeSn avalanche photodiodes designed for short-wave infrared (SWIR) and extended SWIR detection, with reported spectral response cutoffs at 2.14 micrometers. Rudie collaborates with several faculty members at the University of Arkansas at Fayetteville, including Sudip Acharya and Sylvester Amoah, on these research endeavors.
Metrics
- h-index: 3
- Publications: 13
- Citations: 26
Positions
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Academic Laboratory Assistant publications 2022–2026University of Arkansas at Fayetteville Institution web page
Selected Publications
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)arXiv (Cornell University) OpenAlex
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection (2026)
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
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Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) (2025)
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Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy (2024)
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Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024)
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Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction (2022)
Collaboration Network
Top Collaborators
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
- Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
- Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
- Germanium-tin (GeSn) photodiodes with thick absorber for SWIR and extended SWIR detection
- Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength
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