H
Hryhorii Stanchu Data-verified
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Ph.D. student, Research assistant
grad_student
14 h-index
81 pubs
471 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Hryhorii Stanchu's research focuses on the development and characterization of group-IV semiconductor materials and devices for optoelectronic applications. His work investigates the properties of germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn) alloys, particularly their potential for mid-infrared lasers and integrated photonics on silicon platforms. Stanchu has explored methods for strain engineering in these materials, including coherent-interface-induced strain, to improve device performance. His publications detail the growth of GeSn epilayers, the fabrication of electrically injected mid-infrared lasers, and the optical and structural properties of quantum wells for infrared optoelectronics. He has also examined carrier collection efficiency in GeSn quantum wells for all-group-IV photonics. Stanchu collaborates with researchers at the University of Arkansas at Fayetteville, including Fernando Maia de Oliveira, Yuriy I. Mazur, Shui-Qing Yu, and Wei Du, with whom he has co-authored numerous publications.
Metrics
- h-index: 14
- Publications: 81
- Citations: 471
Selected Publications
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025)
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Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025)
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Optical spin polarization by coherent magnetoabsorption generation (2025)
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<i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025)
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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures (2025)
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Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025)
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Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser (2024)
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Ion Implantation Damage Recovery in GeSn Thin Films (2024)
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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024)
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Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024)
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Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
40 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 40 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
32 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 32 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
23 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 23 shared publications
Fernando Maia de Oliveira
21 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 21 shared publications
Wei Du
20 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Showing 5 of 20 shared publications
Sudip Acharya
18 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 18 shared publications
Mourad Benamara
15 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Showing 5 of 15 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
13 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 13 shared publications
Abdulla Said
University of Arkansas at Fayetteville
10 shared publications
In database
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
Showing 5 of 10 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville (US)
10 shared publications
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 10 shared publications
Shui-Qing Yu
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
9 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
Showing 5 of 9 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
9 shared publications
In database
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- Alternative Route of Fracturing in GaN Films Formed by Nanowires Coalescence on Si Substrate
Showing 5 of 9 shared publications
Grey Abernathy
9 shared publications
- SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
- Effects of ion implantation with arsenic and boron in germanium-tin layers
Showing 5 of 9 shared publications
M. D. Teodoro
Universidade Federal de São Carlos (BR)
8 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
Showing 5 of 8 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
8 shared publications
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Strain-driven anomalous elastic properties of GeSn thin films
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Showing 5 of 8 shared publications
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