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Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-08-15
H
Hryhorii Stanchu
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Ph.D. student, Research assistant
Also affiliated: National Academy of Sciences of Ukraine (2014–2018); University of Electronic Science and Technology of China (2017–2020); Center for NanoScience (2018); V.E. Lashkaryov Institute of Semiconductor Physics (2013–2022); Chengdu University (2018)
Graduate Student Researcher
15 h-index
82 pubs
517 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Hryhorii Stanchu's research focuses on the development and characterization of Group-IV semiconductor materials, particularly Germanium-Tin (GeSn) alloys, for optoelectronic applications. His work investigates the relationship between material properties, such as dislocation generation and strain relief, and device performance. Stanchu has published on GeSn quantum wells for photonics-integrated circuits, including studies on mid-infrared lasers operating at cryogenic temperatures and dual-wavelength emission capabilities. He has also explored the optical and structural properties of GeSn/SiGeSn multiple quantum wells and the enhancement of carrier collection efficiency in GeSn single quantum wells for all-group-IV photonics. His research collaborations include extensive work with Gregory J. Salamo, Shui-Qing Yu, Fernando Maia de Oliveira, and Yuriy I. Mazur at the University of Arkansas at Fayetteville. Stanchu has authored 81 publications with 496 citations and an h-index of 14.
Metrics
- h-index: 15
- Publications: 82
- Citations: 517
Selected Publications
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge <sub>0.85</sub> Sn <sub>0.15</sub> on Ge(001) (2026)
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Hopping conduction in GeSiSn alloys: Impact of structural disorder on electrical transport (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026)
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Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025)
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High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025)
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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025)
Collaboration Network
Top Collaborators
Shui-Qing Yu
University of Arkansas at Fayetteville
32 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
Showing 5 of 32 shared publications
Gregory J. Salamo
University of Arkansas at Fayetteville
28 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
Showing 5 of 28 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
23 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
Showing 5 of 23 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
18 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 18 shared publications
Wei Du
University of Arkansas at Fayetteville
16 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 16 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
12 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 12 shared publications
Sudip Acharya
University of Arkansas at Fayetteville
12 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Showing 5 of 12 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
11 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
Showing 5 of 11 shared publications
Abdulla Said
University of Arkansas at Fayetteville
10 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 10 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville
10 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Showing 5 of 10 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
8 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Showing 5 of 8 shared publications
M. D. Teodoro
Universidade Federal de São Carlos (BR)
7 shared publications
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
Showing 5 of 7 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
7 shared publications
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field
- Strain-driven anomalous elastic properties of GeSn thin films
- Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Showing 5 of 7 shared publications
Emmanuel Wangila
University of Arkansas at Fayetteville
7 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Showing 5 of 7 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
7 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 7 shared publications
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