Match tier
Confirmed
Presence
Current · Arkansas
Last published
2026
Sources
OpenAlex · ORCID
Refreshed
2026-10-05
H
Hryhorii V. Stanchu
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Ph.D. student, Research assistant
Also affiliated: National Academy of Sciences of Ukraine (2014–2018); University of Electronic Science and Technology of China (2017–2020); V.E. Lashkaryov Institute of Semiconductor Physics (2013–2022)
15 h-index
94 pubs
524 cited
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Hryhorii V. Stanchu's research focuses on the structural and electronic properties of semiconductor materials, particularly those used in optoelectronic devices. His work has investigated techniques such as X-ray diffraction for characterizing heterostructures, including GaN/AlN superlattices and AlxGa1–xN heterostructures. Stanchu has published research on strain relaxation, dislocation generation, and Sn incorporation in GeSn epilayers grown on Ge/Si substrates, exploring their implications for devices like mid-infrared lasers. He also contributes to reviews on SiGeSn quantum wells for integrated silicon photonics platforms. His collaborations at the University of Arkansas at Fayetteville include extensive work with Fernando Maia de Oliveira, Gregory J. Salamo, Shui-Qing Yu, and Nirosh M. Eldose, with whom he shares numerous publications.
Metrics
- h-index: 15
- Publications: 94
- Citations: 524
Positions
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Ph.D. student, Research assistant 2018–presentUniversity of Arkansas Fayetteville Institute for Nanoscience and Engineering ORCID
Selected Publications
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Dual-barrier GeSn quantum-well lasers with operation up to 150 K (2026)
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Investigation of GeSn aspect ratio trapping growth up to 8% Sn (2026)arXiv (Cornell University) OpenAlex
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Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection (2026)arXiv (Cornell University) OpenAlex
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Germanium-tin (GeSn) avalanche photodiode for detection at 2 µm wavelength (2026)
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)
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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001) (2026)
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Hopping conduction in GeSiSn alloys: Impact of structural disorder on electrical transport (2026)
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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth (2026)
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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations (2026)
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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy (2026)
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Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering (2026)
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Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42% (2026)
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Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction (2026)
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Dual-channel 2DEG micro-Hall effect sensor for extreme environments (2026)
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Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations (2026)arXiv (Cornell University) OpenAlex
Collaboration Network
Top Collaborators
Gregory J. Salamo
University of Arkansas at Fayetteville
38 shared publications
In database
- Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices
- X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
Showing 5 of 38 shared publications
Shui-Qing Yu
University of Arkansas at Fayetteville
36 shared publications
In database
- Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
Showing 5 of 36 shared publications
Yuriy I. Mazur
University of Arkansas at Fayetteville
32 shared publications
In database
- Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
Showing 5 of 32 shared publications
Fernando Maia de Oliveira
University of Arkansas at Fayetteville
20 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Showing 5 of 20 shared publications
Wei Du
University of Arkansas at Fayetteville
20 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 20 shared publications
Mourad Benamara
University of Arkansas at Fayetteville
18 shared publications
In database
- Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
- Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
- Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN(0001)
Showing 5 of 18 shared publications
Sudip Acharya
University of Arkansas at Fayetteville
16 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Showing 5 of 16 shared publications
Nirosh M. Eldose
University of Arkansas at Fayetteville
13 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Title: Growth of germanium thin film on sapphire by molecular beam epitaxy
Showing 5 of 13 shared publications
P. M. Lytvyn
V.E. Lashkaryov Institute of Semiconductor Physics (UA)
11 shared publications
- Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
- Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
- Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin films
- Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN(0001)
- Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
Showing 5 of 11 shared publications
Serhii Kryvyi
University of Arkansas at Fayetteville
11 shared publications
In database
- Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Effects of ion implantation with arsenic and boron in germanium-tin layers
Showing 5 of 11 shared publications
Solomon Ojo
University of Arkansas at Fayetteville
11 shared publications
In database
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
Showing 5 of 11 shared publications
Abdulla Said
University of Arkansas at Fayetteville
10 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission
- Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
Showing 5 of 10 shared publications
Dinesh Baral
University of Arkansas at Fayetteville
10 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 10 shared publications
Mohammad Zamani‐Alavijeh
University of Arkansas at Fayetteville
9 shared publications
In database
- Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
- The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Showing 5 of 9 shared publications
Diandian Zhang
University of Arkansas at Fayetteville
9 shared publications
In database
- MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
- Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
- GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
- STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations
Showing 5 of 9 shared publications
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