Ty R. McNutt
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Also affiliated: National Institute of Standards and Technology (2004–2006); Northrop Grumman (United States) (2005–2009); Cree (China) (2018–2023); Northrop Grumman (Germany) (2007–2008); Fayetteville Public Library (2017); Arkansas Power Electronics International (2004–2016)
Formerly Arkansas Affiliated with University of Arkansas through 2017; recent publications list Wolfspeed, Inc. (United States).
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Biography and Research Information
OverviewAI-generated summary
Ty R. McNutt's research focuses on the application of silicon carbide (SiC) power devices in various electrical systems, particularly in high-temperature and high-voltage environments. His work has explored the development of advanced power electronic components, including isolated on-board vehicle battery chargers, gate drivers, and solid-state circuit breakers utilizing SiC technology. McNutt has investigated and published on the modeling and parameter extraction for SiC power MOSFETs and PiN Schottky diodes, contributing to the understanding and simulation of these semiconductor devices.
His research extends to the design and performance of SiC power modules capable of operating in extreme conditions, such as 10 kV systems. McNutt has also contributed to the development of specific applications, including bidirectional solid-state circuit breakers for DC systems. His scholarly output includes 106 publications with 2,181 citations, and he holds an h-index of 22, designating him as a highly cited researcher. McNutt actively collaborates with other researchers at the University of Arkansas at Fayetteville, including Juan Carlos Balda, Shamar Christian, Jonathan Hayes, and Austin Curbow, on shared publications.
Metrics
- h-index: 22
- Publications: 106
- Citations: 2,181
Selected Publications
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Sliding Window-Based Thermal Topography Determining Thermal Impedance and Thermal Coupling (2023)
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UARK SiC Power MOSFET Model (2017)
Collaboration Network
Top Collaborators
- Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- Silicon carbide power MOSFET model and parameter extraction sequence
- Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models
- Compact models for silicon carbide power devices
Showing 5 of 10 shared publications
- Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- Silicon carbide power MOSFET model and parameter extraction sequence
- Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models
- Compact models for silicon carbide power devices
Showing 5 of 10 shared publications
- Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
- Silicon carbide power MOSFET model and parameter extraction sequence
- A high voltage Dickson charge pump in SOI CMOS
- Compact models for silicon carbide power devices
- Design Technique of an On-Chip, High-Voltage Charge Pump in SOI
Showing 5 of 8 shared publications
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models
- Compact models for silicon carbide power devices
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- Physics-based modeling and characterization for silicon carbide power diodes
Showing 5 of 7 shared publications
- Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- A technique to increase the efficiency of high-voltage charge pumps
- Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models
- Compact circuit simulation model of silicon carbide static induction and junction field effect transistors
Showing 5 of 7 shared publications
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
- Physics-based modeling and characterization for silicon carbide power diodes
- A technique to increase the efficiency of high-voltage charge pumps
- A high voltage Dickson charge pump in SOI CMOS
- Design Technique of an On-Chip, High-Voltage Charge Pump in SOI
- A technique to increase the efficiency of high-voltage charge pumps
- A high voltage Dickson charge pump in SOI CMOS
- Design Technique of an On-Chip, High-Voltage Charge Pump in SOI
- Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
- Silicon carbide power MOSFET model and parameter extraction sequence
- Compact circuit simulation model of silicon carbide static induction and junction field effect transistors
- Modeling vertical channel junction field effect devices in silicon carbide
- Compact circuit simulation model of silicon carbide static induction and junction field effect transistors
- Modeling vertical channel junction field effect devices in silicon carbide
- Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
- Compact circuit simulation model of silicon carbide static induction and junction field effect transistors
- Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
- Modeling vertical channel junction field effect devices in silicon carbide
- A technique to increase the efficiency of high-voltage charge pumps
- Design Technique of an On-Chip, High-Voltage Charge Pump in SOI
- Characterization and modeling of silicon-carbide power devices
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